KR920017463A - 고체촬상소자 - Google Patents

고체촬상소자 Download PDF

Info

Publication number
KR920017463A
KR920017463A KR1019920002950A KR920002950A KR920017463A KR 920017463 A KR920017463 A KR 920017463A KR 1019920002950 A KR1019920002950 A KR 1019920002950A KR 920002950 A KR920002950 A KR 920002950A KR 920017463 A KR920017463 A KR 920017463A
Authority
KR
South Korea
Prior art keywords
section
image pickup
signal charges
imaging device
state imaging
Prior art date
Application number
KR1019920002950A
Other languages
English (en)
Inventor
이사오 히로다
Original Assignee
오가 노리오
소니 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시기가이샤 filed Critical 오가 노리오
Publication of KR920017463A publication Critical patent/KR920017463A/ko

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/713—Transfer or readout registers; Split readout registers or multiple readout registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/715—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using frame interline transfer [FIT]

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

내용 없음

Description

고체촬상소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명에 의한 횡형의 FIT형 고체촬상소자의 일예의 구성도,
제2도는 제1도의 요부의 평면도,
제3도는 본원 발명에 의한 횡형의 FIT형 고체촬상소자의 다른 예의 구성도.

Claims (2)

  1. 촬상부와, 이 촬상부로부터의 신호전하를 축적하는 축적부와, 이 축적부로부터의 상기 신호전하를 독출하는 출력부를 구비한 고체촬상소자에 있어서, 상기 축적부를 상기 촬상부의 수평방향의 일측에 배설하고, 또한 상기 축적부에서는 상기 촬상부의 1화소에 대해 수직방향으로 복수의 셀을 가지는 이루어지는 고체촬상소자.
  2. 촬상부와, 이 촬상부로부터의 신호전하를 축적하는 축적부와, 이 축적부로부터의 상기 신호전하를 독출하는 출력부를 구비한 고체촬상소자에 있어서, 상기 축적부를 상기 촬상부의 수평방향의 일측에 배설하고, 또한 상기 축적부에서는 상기 촬상부의 1화소에 대해 수직방향으로 복수의 셀을 가지는 이루어지는 고체촬상소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019920002950A 1991-02-27 1992-02-26 고체촬상소자 KR920017463A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP91-032989 1991-02-27
JP3032989A JPH04271678A (ja) 1991-02-27 1991-02-27 固体撮像素子

Publications (1)

Publication Number Publication Date
KR920017463A true KR920017463A (ko) 1992-09-26

Family

ID=12374276

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019920002950A KR920017463A (ko) 1991-02-27 1992-02-26 고체촬상소자

Country Status (5)

Country Link
US (1) US5317408A (ko)
EP (1) EP0501333B1 (ko)
JP (1) JPH04271678A (ko)
KR (1) KR920017463A (ko)
DE (1) DE69215715T2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0553544A1 (en) * 1992-01-31 1993-08-04 Matsushita Electric Industrial Co., Ltd. Multiplexed noise suppression signal recovery for multiphase readout of charge coupled device arrays
GB2269505B (en) * 1992-08-07 1996-07-24 Gec Ferranti Defence Syst Integrated-circuit image processing device
US5892542A (en) * 1994-06-09 1999-04-06 Intel Corporation Sectional raster output image sensor
DE19533361C1 (de) * 1995-09-09 1996-10-31 Pco Computer Optics Gmbh Bilderfassungssystem mit einem als Interline-Transfer-Sensor ausgebildeten CCD-Sensor und Verfahren zum Steuern eines solchen CCD-Sensors
JP3213529B2 (ja) * 1995-11-30 2001-10-02 三洋電機株式会社 撮像装置
DE19619186C1 (de) * 1996-05-02 1998-01-02 Pco Computer Optics Gmbh Verfahren sowie System zur Erstellung eines Bildes
EP0888685B1 (en) * 1996-10-03 2004-12-29 Dalsa Corporation Charge coupled imaging device, and method of operating such a device
US7053941B1 (en) * 1999-08-19 2006-05-30 Canon Kabushiki Kaisha Image input apparatus
JP4450941B2 (ja) * 2000-04-12 2010-04-14 富士通マイクロエレクトロニクス株式会社 固体撮像素子、画像処理装置及び画像処理方法
JP4972298B2 (ja) * 2005-08-10 2012-07-11 株式会社日立ハイテクノロジーズ 半導体デバイスの欠陥検査方法及びその装置
JP4734270B2 (ja) * 2007-02-15 2011-07-27 東芝マイクロエレクトロニクス株式会社 固体撮像装置及びその駆動方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5915370A (ja) * 1982-07-16 1984-01-26 Canon Inc 信号処理装置
JPS6115475A (ja) * 1984-07-01 1986-01-23 Canon Inc 撮像素子及び撮像装置
JPS61198981A (ja) * 1985-02-28 1986-09-03 Canon Inc 撮像装置
JPS6277768A (ja) * 1985-10-01 1987-04-09 Matsushita Electronics Corp 固体撮像装置
JPH0644823B2 (ja) * 1986-08-22 1994-06-08 日本ビクター株式会社 固体撮像装置
US4878121A (en) * 1987-07-09 1989-10-31 Texas Instruments Incorporated Image sensor array for still camera imaging with multiplexer for separating interlaced fields
JPS6464472A (en) * 1987-09-04 1989-03-10 Toshiba Corp Ccd area image sensor
JPH03102984A (ja) * 1989-09-14 1991-04-30 Sony Corp 固体撮像装置
EP0419118B1 (en) * 1989-09-14 1995-07-12 Sony Corporation Charge coupled device imager with horizontal charge transfer sections in an imaging section
JPH03120976A (ja) * 1989-10-04 1991-05-23 Fuji Photo Film Co Ltd 固体撮像装置

Also Published As

Publication number Publication date
DE69215715D1 (de) 1997-01-23
DE69215715T2 (de) 1997-06-19
EP0501333A3 (en) 1992-09-16
US5317408A (en) 1994-05-31
EP0501333B1 (en) 1996-12-11
JPH04271678A (ja) 1992-09-28
EP0501333A2 (en) 1992-09-02

Similar Documents

Publication Publication Date Title
KR920017260A (ko) 고체촬상장치
KR920017463A (ko) 고체촬상소자
KR880001148A (ko) 오토 포커스회로
KR890011393A (ko) 고체촬상장치
DE69004663D1 (de) Elektronische standbildkamera, die bildkomprimierung und digitale speicherung verwendet.
KR900003642A (ko) 가늘고 긴 물체의 단부위치 검출장치
KR900004180A (ko) 고체촬상소자
KR930022570A (ko) 고체촬상소자 및 고체촬상소자의 전하독출방법
KR910007344A (ko) 영상 신호 처리 장치
KR920020951A (ko) 영상신호 처리장치
KR920020735A (ko) 고체촬상장치
KR920022542A (ko) 고체촬상장치
EP0547697A3 (en) Solid state imaging device and camera provided with such an imaging device
KR850006818A (ko) 고체 촬상소자
KR900019481A (ko) 고체 촬상 소자의 스미어 제거회로
KR950002053A (ko) 증폭형 고체촬상소자
NL194953B (nl) Televisie met beeldgeheugen en schakelbare ingang daarvan.
KR920008947A (ko) Npn형 vccd 구조의 고체 촬상소자
DE69020432T2 (de) Bildlesevorrichtung vom Flachbettabtastungstyp.
KR910021111A (ko) 광전변환소자의 셰이딩보정회로
KR920020930A (ko) 영상 신호 처리 장치
KR880003444A (ko) 고체촬상장치
FR2667490B1 (fr) Elements de structure pour l'amenagement d'espaces de rangement.
KR970014146A (ko) 움직임 벡터 검출 회로 및 그것을 이용한 피사체 추적 카메라 장치(Motion Vector Detecting Circuit and Camera Apparatus for Tracking the Object Using the Same)
IT9021086A0 (it) Traslatore di livello a transistore singolo, con bassa impedenza dinamica, in tecnologia cmos

Legal Events

Date Code Title Description
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid