KR920017172A - 디램용 커패시터 유전체막 제조방법 - Google Patents

디램용 커패시터 유전체막 제조방법 Download PDF

Info

Publication number
KR920017172A
KR920017172A KR1019910002388A KR910002388A KR920017172A KR 920017172 A KR920017172 A KR 920017172A KR 1019910002388 A KR1019910002388 A KR 1019910002388A KR 910002388 A KR910002388 A KR 910002388A KR 920017172 A KR920017172 A KR 920017172A
Authority
KR
South Korea
Prior art keywords
capacitor dielectric
dram
dielectric film
manufacturing
film
Prior art date
Application number
KR1019910002388A
Other languages
English (en)
Other versions
KR0178992B1 (ko
Inventor
이은구
Original Assignee
문정환
금성일렉트론 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910002388A priority Critical patent/KR0178992B1/ko
Publication of KR920017172A publication Critical patent/KR920017172A/ko
Application granted granted Critical
Publication of KR0178992B1 publication Critical patent/KR0178992B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

내용 없음

Description

디램용 커패시터 유전체막 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (1)

  1. 소정두께의 질화막을 증착하고 이 질화막을 고온에서 소정시간 동안 습식 산화한 후 이 질화막상에 성장된 톱 산화막을 제거하여 남은 질화막만을 커패시터 유전체막으로 사용함을 특징으로 하는 디램용 커패시터 유전체막 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910002388A 1991-02-13 1991-02-13 디램용 커패시터 유전체막 제조방법 KR0178992B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910002388A KR0178992B1 (ko) 1991-02-13 1991-02-13 디램용 커패시터 유전체막 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910002388A KR0178992B1 (ko) 1991-02-13 1991-02-13 디램용 커패시터 유전체막 제조방법

Publications (2)

Publication Number Publication Date
KR920017172A true KR920017172A (ko) 1992-09-26
KR0178992B1 KR0178992B1 (ko) 1999-04-15

Family

ID=19311071

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910002388A KR0178992B1 (ko) 1991-02-13 1991-02-13 디램용 커패시터 유전체막 제조방법

Country Status (1)

Country Link
KR (1) KR0178992B1 (ko)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11083856B2 (en) 2014-12-11 2021-08-10 Nicoventures Trading Limited Aerosol provision systems
US11253671B2 (en) 2011-07-27 2022-02-22 Nicoventures Trading Limited Inhaler component
US11744964B2 (en) 2016-04-27 2023-09-05 Nicoventures Trading Limited Electronic aerosol provision system and vaporizer therefor

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11253671B2 (en) 2011-07-27 2022-02-22 Nicoventures Trading Limited Inhaler component
US11083856B2 (en) 2014-12-11 2021-08-10 Nicoventures Trading Limited Aerosol provision systems
US11744964B2 (en) 2016-04-27 2023-09-05 Nicoventures Trading Limited Electronic aerosol provision system and vaporizer therefor

Also Published As

Publication number Publication date
KR0178992B1 (ko) 1999-04-15

Similar Documents

Publication Publication Date Title
KR930003380A (ko) 반도체기억장치의 커패시터 및 그 제조방법
KR910001971A (ko) 반도체 장치의 제조방법
KR920017172A (ko) 디램용 커패시터 유전체막 제조방법
KR890011127A (ko) 산화물 초전도체
KR930003350A (ko) 반도체 dram 소자용 캐패시터 제조방법
KR930003894A (ko) 봉선화 손톱 메니큐어
KR920015470A (ko) 반도체 장치 및 반도체 장치용 절연 막 제조방법
KR920015532A (ko) 디램 셀 제조방법
KR920015543A (ko) 커패시터 제조방법
KR900013631A (ko) 고집적 적층 커패시터 메모리셀
KR930003258A (ko) 반도체 소자의 콘택 형성방법
KR920015439A (ko) 반도체소자의 메탈 콘택 제조방법
KR920017232A (ko) 반도체 메모리 소자의 커패시터 유전체막 제조방법
KR960019718A (ko) 캐패시터 구조 및 그 제조 방법
KR940016596A (ko) 얇은 질화막 증착방법
KR910019077A (ko) 반도체장치의 유전체
KR910005453A (ko) 저온 산화막의 측벽을 이용한 콘덴서의 수직 제조방법
KR920015447A (ko) 반도체 소자의 유전체막 형성방법
KR920010678A (ko) 유전체 자기조성물
KR920000657A (ko) 세라믹 유전체 조성물
KR920001649A (ko) 폴리에치 잉여물의 제거방법
KR830010189A (ko) 술의 각종
KR910017662A (ko) 기생 커패시터 방지를 위한 반도체 구조
KR920021070A (ko) 도토리쿨(토토리음료)
KR920015488A (ko) 바이폴라-피모스 소자의 구조

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051021

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee