KR920015461A - 칼라필터 및 그 제조방법 - Google Patents

칼라필터 및 그 제조방법 Download PDF

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Publication number
KR920015461A
KR920015461A KR1019910000266A KR910000266A KR920015461A KR 920015461 A KR920015461 A KR 920015461A KR 1019910000266 A KR1019910000266 A KR 1019910000266A KR 910000266 A KR910000266 A KR 910000266A KR 920015461 A KR920015461 A KR 920015461A
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KR
South Korea
Prior art keywords
layer
color filter
layers
forming
pixels
Prior art date
Application number
KR1019910000266A
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English (en)
Inventor
김상식
박한수
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019910000266A priority Critical patent/KR920015461A/ko
Priority to GB9113673A priority patent/GB2251721B/en
Priority to DE4120966A priority patent/DE4120966A1/de
Publication of KR920015461A publication Critical patent/KR920015461A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Abstract

내용 없음

Description

칼라필터 및 그 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 이 발명에 따른 칼라필터의 단면도, 제3도는 (A)-(C)도는 이 발명에 따른 칼라필터의 제조공정도이다.

Claims (8)

  1. 복수의 화소들이 매트릭스 형상으로 배치된 반도체 기판의 상부에 형성된 칼라필터에 있어서, 상기 반도체 기판의 상부에 형성된 평탄화층과, 상기 평탄화층의 상부에 적층된 적어도 2개의 중간층들과, 상기 중간층들의 하부에 상기 화소드과 대응하도록 형성되며 입사광을 분광하는 적어도 2개의 염색층들과, 상기 최상의 중간층상에 형성된 렌즈층과, 상기 렌즈층의 상부에 소정의 곡률반경을 가지며 상기 화소들과 대응하도록 형성된 복수의 렌즈들과, 상기 렌즈들의 표면상에 얇게 형성된 후방산란 방지층들로 구성됨을 특징으로 하는 칼라필터.
  2. 제1항에 있어서, 상기 후방산란 방지층들은 이웃하는 것들끼리 서로 접촉되도록 형성됨을 특징으로 하는 칼라 필터.
  3. 제1항에 있어서, 상기 후방산란 방지층들은 반사를 하지 않는 물질로 구성됨을 특징으로 하는 칼라필터.
  4. 복수의 화소들이 매트릭스 형상으로 배치된 반도체기판의 상부에 형성하는 칼라필터의 제조방법에 있어서, 상기 반도체 기판의 상부에 평탄화층을 형성하는 제1과정, 상기 평탄화층의 표면에 상기 복수의 화소들중 임의의 화소와 대응하는 염색층을 형성하는 공정과, 상기 염색층의 상부에 중간층을 형성하는 공정으로 이루어지는 제2과정, 상기 제2과정을 적어도 2회 반복처리하는 제3과정, 상기 제3과정 후 최상의 중간층에 렌즈층을 형성하는 제4과정, 상기 렌즈층의 상부에 소정의 곡률반경을 가지며 상기 복수의 화소들과 대응하도록 복수의 렌즈들을 형성하는 제5과정, 상기 복수의 렌즈들의 표면에 후방산란 방지층들을 형성하는 제6과정으로 형성하는 것을 특징으로 하는 칼라필터의 제조방법.
  5. 제4항에 있어서, 상기 후방산란 방지층들을 반사하지 않는 물질로 형성하는 것을 특징으로 하는 칼라필터의 제조방법.
  6. 제4항에 있어서, 상기 후방산란 방지층들을 도포 또는 증기증착방법중 어느 하나의 방법으로 형성함을 특징으로 하는 칼라필터의 제조방법.
  7. 제4항에 있어서, 상기 후방산란 방지층들을 이웃하는 것들끼리 접촉하도록 형성하는 것을 특징으로 하는 칼라필터의 제조방법.
  8. 제7항에 있어서, 상기 후방산란 방지층들을 서로 접촉하는 부분에서 소정의 곡률을 갖도록 형성하는 것을 특징으로 하는 칼라필터의 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910000266A 1991-01-10 1991-01-10 칼라필터 및 그 제조방법 KR920015461A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019910000266A KR920015461A (ko) 1991-01-10 1991-01-10 칼라필터 및 그 제조방법
GB9113673A GB2251721B (en) 1991-01-10 1991-06-25 Colour filter and its manufacture
DE4120966A DE4120966A1 (de) 1991-01-10 1991-06-25 Farbfilter und verfahren zur herstellung desselben

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910000266A KR920015461A (ko) 1991-01-10 1991-01-10 칼라필터 및 그 제조방법

Publications (1)

Publication Number Publication Date
KR920015461A true KR920015461A (ko) 1992-08-26

Family

ID=19309598

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910000266A KR920015461A (ko) 1991-01-10 1991-01-10 칼라필터 및 그 제조방법

Country Status (3)

Country Link
KR (1) KR920015461A (ko)
DE (1) DE4120966A1 (ko)
GB (1) GB2251721B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5377046A (en) * 1993-01-21 1994-12-27 Ryan Screen Printing Inc. Indicator viewing angle enhancer
JP2601148B2 (ja) * 1993-07-23 1997-04-16 日本電気株式会社 固体撮像装置
KR0147401B1 (ko) * 1994-02-23 1998-08-01 구본준 고체촬상소자 및 그 제조방법
KR100790981B1 (ko) * 2006-02-13 2008-01-02 삼성전자주식회사 칼라필터, 칼라필터 어레이 및 그의 제조방법과 이미지센서
CN101769784B (zh) * 2008-12-27 2012-06-20 鸿富锦精密工业（深圳）有限公司 感测器组合
KR101965529B1 (ko) * 2018-04-06 2019-04-03 한양대학교 산학협력단 양자점층을 포함하는 듀얼 이미지 센서

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59198754A (ja) * 1983-04-26 1984-11-10 Toshiba Corp カラ−用固体撮像デバイス
JPH0642002B2 (ja) * 1983-07-29 1994-06-01 セイコーエプソン株式会社 プラスチックレンズ
US4694185A (en) * 1986-04-18 1987-09-15 Eastman Kodak Company Light sensing devices with lenticular pixels
JPH01246505A (ja) * 1988-03-29 1989-10-02 Canon Inc 固体撮像素子

Also Published As

Publication number Publication date
DE4120966A1 (de) 1992-07-16
GB2251721A (en) 1992-07-15
GB2251721B (en) 1994-11-16
GB9113673D0 (en) 1991-08-14

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