KR920010627B1 - Etching method - Google Patents
Etching method Download PDFInfo
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- KR920010627B1 KR920010627B1 KR1019900018147A KR900018147A KR920010627B1 KR 920010627 B1 KR920010627 B1 KR 920010627B1 KR 1019900018147 A KR1019900018147 A KR 1019900018147A KR 900018147 A KR900018147 A KR 900018147A KR 920010627 B1 KR920010627 B1 KR 920010627B1
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- South Korea
- Prior art keywords
- etching
- etching method
- triangular wave
- foil
- aqueous
- Prior art date
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- 238000005530 etching Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 title claims abstract description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 16
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 16
- 239000011888 foil Substances 0.000 claims abstract description 13
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- FLDCSPABIQBYKP-UHFFFAOYSA-N 5-chloro-1,2-dimethylbenzimidazole Chemical compound ClC1=CC=C2N(C)C(C)=NC2=C1 FLDCSPABIQBYKP-UHFFFAOYSA-N 0.000 abstract 1
- 239000001741 Ammonium adipate Substances 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000005030 aluminium foil Substances 0.000 abstract 1
- 235000019293 ammonium adipate Nutrition 0.000 abstract 1
- 238000010276 construction Methods 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 12
- 239000007864 aqueous solution Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- RATMLZHGSYTFBL-UHFFFAOYSA-N azanium;6-hydroxy-6-oxohexanoate Chemical compound N.OC(=O)CCCCC(O)=O RATMLZHGSYTFBL-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002848 electrochemical method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- ing And Chemical Polishing (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
이 발명은 에칭 방법에 관한 것으로, 에칭 배료의 피트(pit) 밀도를 높혀 표면적의 극대화를 기하기 위한 것이다.The present invention relates to an etching method, to increase the pit density of the etching discharge to maximize the surface area.
이하 이 발명의 에칭 방법이 가장 유효하게 쓰이는 분야인 알미늄 전해 콘덴서의 전극박으로 사용되는 알미늄 박판의 제조를 예로 들어 이 발명의 방법을 기술할 것이나, 이 발명의 기술 사상은 이에 한정되는 것이 아니다.Hereinafter, the method of the present invention will be described taking the manufacture of an aluminum thin plate used as an electrode foil of an aluminum electrolytic capacitor, which is the field in which the etching method of the present invention is most effectively used, but the technical idea of the present invention is not limited thereto.
알미늄 전해 콘덴서는 전극으로 알미늄 박판을 사용하며, 다른 소자 부품들과 같이 소형, 고용량화가 추구되면서 단위 면적당 정전 용량이 높은 전극 부재를 요구하고 있다.The aluminum electrolytic capacitor uses an aluminum thin plate as an electrode. Like other device parts, an aluminum electrolytic capacitor is required for an electrode member having a high capacitance per unit area due to the pursuit of small size and high capacity.
이에 따라 콘덴서의 전극 부재는 전기 화학적 방법으로 전극 부재의 표면에요철을 형성하여 그 표면적을 증대시킴으로써 정전 용량을 향상시키고자 하게 되었고, 이에 따라 표면을 에칭 처리한 알미늄 박이 콘덴서의 전극 부재로 사용되고 있으며, 에칭에 의한 표면적의 확장은 에칭 기술의 발전에 따라 괄목할만큼 이루어졌다.Accordingly, the electrode member of the capacitor is intended to improve the capacitance by forming an unevenness on the surface of the electrode member by an electrochemical method and increasing its surface area. Accordingly, the aluminum foil whose surface is etched is used as the electrode member of the capacitor. However, the surface area expansion by etching has been remarkable with the development of etching technology.
최근 에칭 시의 전원으로는 표면적 증대를 극대화하기 위해 구형파나 삼각파 등의 이용이 활발히연구되고 있다.Recently, the use of square waves and triangle waves has been actively studied as a power source for etching to maximize surface area increase.
발명자는 이 가운데 삼각파를 전원으로 하는 알미늄 박의 에칭을 보다 효율적으로 이루기 위하여, 삼각파에 직류를 중첩시켜 에칭 전원으로 하면 종래의 단순한 삼각파를 전원으로 하는 경우보다 10% 이상 정전 용량이 증대한 콘덴서를 얻을 수 있음을 실험을 통해 발견하였다.In order to more efficiently etch aluminum foil using a triangular wave as a power source, the inventors of the present invention have a capacitor in which a capacitance is increased by 10% or more when a direct current is superimposed on a triangular wave as an etch power source than a conventional triangular wave is used as a power source. It was found through the experiment that it can be obtained.
따라서 이 발명에서는 전해 콘덴서의 소형, 고용량화라는 목적을 위해 직류가 중첩된 삼각파를 전원으로하는 에칭 방법을 제공한다.Accordingly, the present invention provides an etching method using a triangular wave superimposed on direct current for the purpose of miniaturization and high capacity of an electrolytic capacitor.
그러나 이 발명의 출발은 알미늄 전해 콘덴서의 전극 부재의 특성 향상을 기하는 것을 목적으로 연구되었으나, 그 밖의 기술 분야, 예를 들어 자동차 배기계의 촉매 장치 등에서와 같이 소정 부재의 표면적을 에칭에 의해 극대화시키는 것을 추구하는 모든 기술 분야에 이 발명의 기술 사상이 적용될 수 있음은 물론이다.However, the start of the present invention has been studied for the purpose of improving the characteristics of the electrode member of the aluminum electrolytic capacitor, but in other technical fields, for example, to maximize the surface area of the predetermined member by etching, such as the catalyst device of the automobile exhaust system, etc. It goes without saying that the technical idea of the present invention can be applied to all technical fields pursuing the thing.
알미늄 전해 콘덴서의 제조 시, 전극 부재의 에칭을 위한 전원으로는 교류와 직류 전원이 일반적으로 사용되며, 직류 전원의 경우는 알미늄박의 심부로 에칭이 진행하기 때문에 고압용 전극박의 제조 시, 교류는 강도가 우수하며 작고 미세한 피트(pit)를 가진 전극박을 얻을 수 있으므로 저중압용 전극박의 제조 시에 사용되고 있다.In the manufacture of aluminum electrolytic capacitors, alternating current and direct current power are generally used as the power source for etching the electrode members, and in the case of direct current power, since the etching proceeds to the deep part of the aluminum foil, the alternating current is produced during the production of the high voltage electrode foil. Has been used in the manufacture of low and medium pressure electrode foils because of their excellent strength and small and fine electrode foils.
교류 전원이 작고 미세한 피트를 형성하는 것은 정현파인 교류의 양의 시간에서는 에칭이 진행하고, 음의 시간에서는 에칭의 진행을 막는 에치 필름(etchfil m)을 형성하는 것이 반복되어 부식 개시점을 증가시키기 때문이다.The formation of small and fine pits of alternating current power is performed by the etching process at the positive time of the alternating sine wave, and the formation of an etch film which prevents the progress of the etching at the negative time, thereby increasing the initiation point of corrosion. Because.
그러나 종래의 직류 또는 교류 전원만으로 가공 재료의 표면적을 증대시키는 것은 한계에 달하여, 최근에는 구형파, 삼각파 등 특수 파형의 이용에 대한 폭넓은 연구가 이루어지고 있다.However, it has reached a limit to increase the surface area of a workpiece using only a conventional direct current or alternating current power supply, and in recent years, extensive research on the use of special waveforms such as square waves and triangle waves has been made.
발명자는 삼각파를 전원으로 이용할 때, 통상의 삼각파에 직류를 중첩시켜, 곧 삼각파인 전원의 파형을 소정 직류 레벨에 클램프(clamp)시켜 행하면 정전 용량이 향상하는 것을 발견하였다.When the triangular wave is used as a power source, the inventors have found that the capacitance is improved by superimposing a direct current on a regular triangular wave and immediately clamping the waveform of the triangular wave power supply to a predetermined direct current level.
이 발명의 기술 사상은 다음의 실시예를 통해 확연히 이해될 수 있을 것이다.The technical idea of the present invention will be clearly understood through the following examples.
[실시예]EXAMPLE
이 실시예에서는 순도 99.99%의 90㎛ 두께의 알미늄박을 열 처리하여 시료로 사용하였다. 클램퍼로는 다이오드, 콘덴서, 저항 및 직류 배터리로 구성된 통상의 클램핑 회로를 사용하였다.In this example, a 90 µm thick aluminum foil having a purity of 99.99% was heat-treated and used as a sample. As a clamper, a conventional clamping circuit composed of a diode, a capacitor, a resistor and a direct current battery was used.
상기 시료를 2중량%의 인산(H3PO4) 수용액에서 전 처리한 뒤, 6중량%의 HCL+1.5중량%의 인산 수용액에서 정현파인 교류, 통상의 삼각파, 이 발명에 의한 클램프된 삼각파를 전원으로 사용하여 각각 용해 감량이 20%에 달할 때까지 에칭을 행하고, 아디핀산 암모늄 수용액에서 140V로 화성한 뒤 정전 용량을 측정하였다.The sample was pretreated in 2% by weight aqueous solution of phosphoric acid (H 3 PO 4 ), and then alternating sinusoidal, conventional triangular wave, and clamped triangular wave according to the present invention in 6% by weight aqueous solution of HCl + 1.5% by weight phosphoric acid. Etching was carried out using a power source until the amount of dissolution reached 20%, respectively, and the capacitance was measured after forming at 140 V in an aqueous solution of ammonium adipic acid.
에칭 시의 전류 밀도는 교류의 경우 최대 및 최소치를 ±0.5A/㎠으로, 통상의 삼각파는 최대 및 최소치를 ±0.6A/㎠으로 하였다.이 발명의 클램프된 삼각파는 최대치를 ±0.9A/㎠, 최저치를 -0.3A/㎠으로 하였다. 전원의 주파수는 모두 60㎐로 동일하게 하였다. 이렇게 에칭이 행해진 시료들을 140V로 화성을 행한 뒤 정전 용량을 측정한 결과가 아래 표에 나타나 있다.The current density during etching was ± 0.5 A / cm 2 for maximum and minimum values in the case of alternating current, and ± 0.6 A / cm 2 for normal triangle waves. The clamped triangle wave of the present invention had a maximum value of ± 0.9 A / cm 2. , The minimum was set to -0.3 A / cm 2. The frequency of the power supply was the same at all 60 Hz. The results of measuring the capacitance after chemically etching the samples subjected to the etching at 140V are shown in the table below.
[표][table]
이상에서 보듯이 삼각파를 클램프하여 에칭 전원으로 사용할 경우 종래의 방법에 비해 정전 용량이10%이상 증대하였다.As described above, when the triangular wave is clamped and used as an etching power source, the capacitance increases by 10% or more compared with the conventional method.
이러한 효과는 클램프된 삼각파의 최대치의 절대값이 최저치의 절대값에 비해 2-4배일 때 얻어질 수 있었고, 4배를 넘을 경우에는 에치 필름의 형성이 약하여 피트의 밀도가 낮았으며, 2배 미만인 경우에는 통상의 삼각파를 이용한 경우와 별 차이가 없었다.This effect could be obtained when the absolute value of the maximum value of the clamped triangle wave is 2-4 times the absolute value of the lowest value, and when it exceeds 4 times, the formation of the etch film is weak and the pit density is low. In the case of using a triangular wave there was no difference.
이와같은 이 발명의 방법에 의하면 단위 면적당 정전 용량이 향상된 고용량의 알미늄박을 제조할 수 있어 보다 고용량화 및 소형화가 이루어진 콘덴서를 얻을 수 있다.According to this method of the present invention, it is possible to manufacture a high capacity aluminum foil having improved capacitance per unit area, thereby obtaining a capacitor having a higher capacity and a smaller size.
또한 이 발명의 기술 사상은 알미늄 전해 콘덴서의 제조에만 한정되는 것이 아니라 알미늄박을 에칭하여 표면적의 증대를 꾀하는 모든 기술 분야에 적용될 수 있음은 물론이다.In addition, the technical idea of the present invention is not limited to the production of aluminum electrolytic capacitors, but of course, it can be applied to all technical fields to increase the surface area by etching the aluminum foil.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900018147A KR920010627B1 (en) | 1990-11-09 | 1990-11-09 | Etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900018147A KR920010627B1 (en) | 1990-11-09 | 1990-11-09 | Etching method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920010683A KR920010683A (en) | 1992-06-27 |
| KR920010627B1 true KR920010627B1 (en) | 1992-12-12 |
Family
ID=19305826
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019900018147A KR920010627B1 (en) | 1990-11-09 | 1990-11-09 | Etching method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR920010627B1 (en) |
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1990
- 1990-11-09 KR KR1019900018147A patent/KR920010627B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR920010683A (en) | 1992-06-27 |
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