KR910013551A - 2층 다결정실리콘을 이용한 sram셀의 저항증가 방법 - Google Patents
2층 다결정실리콘을 이용한 sram셀의 저항증가 방법 Download PDFInfo
- Publication number
- KR910013551A KR910013551A KR1019890020113A KR890020113A KR910013551A KR 910013551 A KR910013551 A KR 910013551A KR 1019890020113 A KR1019890020113 A KR 1019890020113A KR 890020113 A KR890020113 A KR 890020113A KR 910013551 A KR910013551 A KR 910013551A
- Authority
- KR
- South Korea
- Prior art keywords
- sram cell
- increasing resistance
- layer polysilicon
- polysilicon
- polycrystalline silicon
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims description 4
- 229920005591 polysilicon Polymers 0.000 title description 2
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 따른 다결정실리콘 저항 형성 방법을 나타내는 평면도.
Claims (1)
- 다결정 실리콘을 부하 저항으로 사용하는 SRAM셀에 있어서, 상기 다결정실리콘이 다층 구조를 가짐을 특징으로 하는 SRAM 셀의 부하저항 형성방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890020113A KR910013551A (ko) | 1989-12-29 | 1989-12-29 | 2층 다결정실리콘을 이용한 sram셀의 저항증가 방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890020113A KR910013551A (ko) | 1989-12-29 | 1989-12-29 | 2층 다결정실리콘을 이용한 sram셀의 저항증가 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR910013551A true KR910013551A (ko) | 1991-08-08 |
Family
ID=67662365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890020113A KR910013551A (ko) | 1989-12-29 | 1989-12-29 | 2층 다결정실리콘을 이용한 sram셀의 저항증가 방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR910013551A (ko) |
-
1989
- 1989-12-29 KR KR1019890020113A patent/KR910013551A/ko not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| SUBM | Surrender of laid-open application requested |