KR910013492A - 배선층간의 절연막 평탄화방법 - Google Patents

배선층간의 절연막 평탄화방법 Download PDF

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Publication number
KR910013492A
KR910013492A KR1019890020709A KR890020709A KR910013492A KR 910013492 A KR910013492 A KR 910013492A KR 1019890020709 A KR1019890020709 A KR 1019890020709A KR 890020709 A KR890020709 A KR 890020709A KR 910013492 A KR910013492 A KR 910013492A
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KR
South Korea
Prior art keywords
insulating film
wiring layers
heat treatment
planarization method
treatment process
Prior art date
Application number
KR1019890020709A
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English (en)
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KR940011742B1 (ko
Inventor
안용철
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019890020709A priority Critical patent/KR940011742B1/ko
Publication of KR910013492A publication Critical patent/KR910013492A/ko
Application granted granted Critical
Publication of KR940011742B1 publication Critical patent/KR940011742B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/469—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After-treatment of these layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음.

Description

배선층간의 절연막 평탄화방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이상적으로 배선층간의 절연막을 평탄화시킨 단면도,
제2A도 및 제2B도는 종래 배선층간의 절연막 평탄화 방법을 도시한 공정순서도,
제3도는 제2B도의 공정조건을 나타낸 도면.

Claims (2)

  1. 열처리 공정에 의한 배선층간의 절연막 평탄화 방법에 있어서, 상기 열처리 공정은 저온 열처리 공정과, 고온 열처리 공정의 2단계로 이루어짐을 특징으로 하는 배선층간의 절연막 평탄화방법.
  2. 제1항에 있어서, 상기 고운 열처리 공정은 O2분위기에서 이루어지는 것을 특징으로 하는 배선층간의 절연막 평탄화방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890020709A 1989-12-30 1989-12-30 배선층간의 절연막 평탄화방법 KR940011742B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019890020709A KR940011742B1 (ko) 1989-12-30 1989-12-30 배선층간의 절연막 평탄화방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019890020709A KR940011742B1 (ko) 1989-12-30 1989-12-30 배선층간의 절연막 평탄화방법

Publications (2)

Publication Number Publication Date
KR910013492A true KR910013492A (ko) 1991-08-08
KR940011742B1 KR940011742B1 (ko) 1994-12-23

Family

ID=19294762

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890020709A KR940011742B1 (ko) 1989-12-30 1989-12-30 배선층간의 절연막 평탄화방법

Country Status (1)

Country Link
KR (1) KR940011742B1 (ko)

Also Published As

Publication number Publication date
KR940011742B1 (ko) 1994-12-23

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