KR910006458A - Micro Surface Treatment - Google Patents

Micro Surface Treatment Download PDF

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Publication number
KR910006458A
KR910006458A KR1019900009639A KR900009639A KR910006458A KR 910006458 A KR910006458 A KR 910006458A KR 1019900009639 A KR1019900009639 A KR 1019900009639A KR 900009639 A KR900009639 A KR 900009639A KR 910006458 A KR910006458 A KR 910006458A
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KR
South Korea
Prior art keywords
agent
microfabricated
weight
surface treatment
treating agent
Prior art date
Application number
KR1019900009639A
Other languages
Korean (ko)
Other versions
KR950014734B1 (en
Inventor
타다히로 오우미
마사히로 미끼
히로히사 기꾸야마
Original Assignee
하시모또 미찌노스께
하시모또 가세이 고오고 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 하시모또 미찌노스께, 하시모또 가세이 고오고 가부시끼가이샤 filed Critical 하시모또 미찌노스께
Publication of KR910006458A publication Critical patent/KR910006458A/en
Application granted granted Critical
Publication of KR950014734B1 publication Critical patent/KR950014734B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means

Abstract

내용 없음No content

Description

미세가공표면처리제Micro Surface Treatment

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

Claims (9)

플루오르화수소산, 플루오르화암모늄 및 물로 이루어진 혼합용액을 함유하는 미세가공표면처리제에 있어서, 상기 혼합용액이 플루오르화수소산을 0.01-8중량% 미만및 플루오르화암모늄을 0.01-15중량%미만 함유하는 미세가공표면처리제.A micro-processing surface treatment agent containing a mixed solution of hydrofluoric acid, ammonium fluoride, and water, wherein the mixed solution contains less than 0.01-8% by weight of hydrofluoric acid and less than 0.01-15% by weight of ammonium fluoride. Surface finishes. 플루오르화수소산을 0.01-8중량% 미만및 플루오르화암모늄을 0.01-15중량%미만 함유하는 수용액에, 지방족 카르복시산및 그것의 염, 지방족아민 및 지방족 알코올로 이루어진 계면활성제의 군에서 선택된 적어도 1종을 함유시키된 미세가공표면처리제.In an aqueous solution containing less than 0.01-8% by weight of hydrofluoric acid and less than 0.01-15% by weight of ammonium fluoride, at least one member selected from the group consisting of aliphatic carboxylic acids and their salts, aliphatic amines and aliphatic alcohols Contains microfabricated surface treatment agent. 플루오르화수소산을 0.01-8중량미만및 플루오르화암모늄을 0.01-15중량%미만을 함유하는 수용액에, 지방족 아민을 함유시킴과 동시에, 지방족 카르복시산 그것의 지방족 알코올가운데 적어도 어느1종을 함유시켜된 미세가공표면처리제.An aliphatic amine is contained in an aqueous solution containing less than 0.01-8% by weight of hydrofluoric acid and less than 0.01-15% by weight of ammonium fluoride, and at least one kind of aliphatic carboxylic acid and aliphatic alcohol thereof is contained. Surface finishes. 제1항에 있어서, 표면처리제가 실리콘산화막의 에칭제인 미세가공표면처리제.The microfabricated surface treating agent according to claim 1, wherein the surface treating agent is an etching agent of a silicon oxide film. 제2항에 있어서, 표면처리제가 실리콘산화막의 에칭제인 미세가공표면처리제.3. The microfabricated surface treating agent according to claim 2, wherein the surface treating agent is an etching agent of a silicon oxide film. 제3항에 있어서, 표면처리제가 실리콘산화막의 에칭제인 미세가공표면처리제.The surface treatment agent according to claim 3, wherein the surface treatment agent is an etching agent of a silicon oxide film. 제1항에 있어서, 표면처리제가 실리콘표면및 반도체소자 표면의 세척제인 미세가공표면처리제.The microfabricated surface treating agent according to claim 1, wherein the surface treating agent is a cleaning agent for silicon surfaces and semiconductor device surfaces. 제2항에 있어서, 표면처리제가 실리콘표면및 반도체소자 표면의 세척제인 미세가공표면처리제.3. The microfabricated surface treatment agent according to claim 2, wherein the surface treatment agent is a cleaning agent for silicon surfaces and semiconductor device surfaces. 제3항에 있어서, 미세가공 표면처리제가 실리콘표면및 반도체소자표면의 세척제인 미세가공표면처리제.4. The microfabricated surface treating agent according to claim 3, wherein the microfabricated surface treating agent is a cleaning agent for the silicon surface and the semiconductor element surface. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900009639A 1989-06-26 1990-06-26 Surface treatment agent for fine surface treatment KR950014734B1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP163230 1989-06-26
JP16323089 1989-06-26
JP1246860A JP2852355B2 (en) 1989-06-26 1989-09-21 Fine processing surface treatment agent
JP246860/1989 1989-09-21
JP1-246860 1989-09-21

Publications (2)

Publication Number Publication Date
KR910006458A true KR910006458A (en) 1991-04-29
KR950014734B1 KR950014734B1 (en) 1995-12-14

Family

ID=15769801

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900009639A KR950014734B1 (en) 1989-06-26 1990-06-26 Surface treatment agent for fine surface treatment

Country Status (2)

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JP (1) JP2852355B2 (en)
KR (1) KR950014734B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439859B1 (en) * 2001-12-21 2004-07-12 동부전자 주식회사 Method for making a photo-resist pattern for fabricating a semiconductor device
KR20170058691A (en) 2015-11-19 2017-05-29 솔브레인 주식회사 Composition for etching and manufacturing method of semiconductor device using the same
US10414978B2 (en) 2016-12-14 2019-09-17 Samsung Electronics Co., Ltd. Etching composition and method for fabricating semiconductor device by using the same
US11091696B2 (en) 2018-09-07 2021-08-17 Samsung Electronics Co., Ltd. Etching composition and method for manufacturing semiconductor device using the same

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3309392B2 (en) * 1993-02-04 2002-07-29 ダイキン工業株式会社 Wet etching composition for semiconductor with excellent wettability
KR0147659B1 (en) * 1995-08-18 1998-08-17 김광호 Cleaning solution for semiconductor device and cleaning method using the same
JP3188843B2 (en) * 1996-08-28 2001-07-16 ステラケミファ株式会社 Fine processing surface treatment agent and fine processing surface treatment method
DE19805525C2 (en) * 1998-02-11 2002-06-13 Sez Semiconduct Equip Zubehoer Process for wet-etching semiconductor wafers to produce a defined edge region by under-etching
US6797194B1 (en) 1998-02-27 2004-09-28 Stella Chemifa Kabushiki Kaisha Surface treating for micromachining and method for surface treatment
JP4485302B2 (en) * 2004-09-17 2010-06-23 株式会社半導体エネルギー研究所 Method for manufacturing transmissive display device
JP4485303B2 (en) * 2004-09-17 2010-06-23 株式会社半導体エネルギー研究所 Method for manufacturing transmissive display device
JP2008124135A (en) * 2006-11-09 2008-05-29 Stella Chemifa Corp Micromachining treatment agent, and micromachining treatment method using it
KR100891255B1 (en) * 2007-01-05 2009-04-01 주식회사 하이닉스반도체 Etchant Compositon for Preventing Leaning of Capacitor and Method for Manufacturing Capacitor Using the Same
JP2012193074A (en) * 2011-03-16 2012-10-11 Seiko Epson Corp Separation method and separation apparatus
JP2012201554A (en) * 2011-03-25 2012-10-22 Seiko Epson Corp Method and apparatus for separation
JP6433730B2 (en) 2014-09-08 2018-12-05 東芝メモリ株式会社 Semiconductor device manufacturing method and semiconductor manufacturing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3839111A (en) * 1973-08-20 1974-10-01 Rca Corp Method of etching silicon oxide to produce a tapered edge thereon
JPS5893238A (en) * 1981-11-30 1983-06-02 Daikin Ind Ltd Composition for etching
JPH0239859B2 (en) * 1982-08-13 1990-09-07 Tokyo Ohka Kogyo Co Ltd SHIRIKOONKEIJUSHIHIMAKUYOETSUCHINGUEKI
JPS61207586A (en) * 1985-03-12 1986-09-13 Morita Kagaku Kogyo Kk Etching solution for silicon dioxide film

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439859B1 (en) * 2001-12-21 2004-07-12 동부전자 주식회사 Method for making a photo-resist pattern for fabricating a semiconductor device
KR20170058691A (en) 2015-11-19 2017-05-29 솔브레인 주식회사 Composition for etching and manufacturing method of semiconductor device using the same
US10414978B2 (en) 2016-12-14 2019-09-17 Samsung Electronics Co., Ltd. Etching composition and method for fabricating semiconductor device by using the same
US10793775B2 (en) 2016-12-14 2020-10-06 Samsung Electronics Co., Ltd. Etching composition and method for fabricating semiconductor device by using the same
US11198815B2 (en) 2016-12-14 2021-12-14 Samsung Electronics Co., Ltd. Etching composition and method for fabricating semiconductor device by using the same
US11091696B2 (en) 2018-09-07 2021-08-17 Samsung Electronics Co., Ltd. Etching composition and method for manufacturing semiconductor device using the same

Also Published As

Publication number Publication date
JPH03179737A (en) 1991-08-05
KR950014734B1 (en) 1995-12-14
JP2852355B2 (en) 1999-02-03

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