KR970003648A - Oxide removal method of semiconductor device - Google Patents

Oxide removal method of semiconductor device Download PDF

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Publication number
KR970003648A
KR970003648A KR1019950018539A KR19950018539A KR970003648A KR 970003648 A KR970003648 A KR 970003648A KR 1019950018539 A KR1019950018539 A KR 1019950018539A KR 19950018539 A KR19950018539 A KR 19950018539A KR 970003648 A KR970003648 A KR 970003648A
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KR
South Korea
Prior art keywords
semiconductor device
oxide film
removal method
oxide removal
hydrofluoric acid
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Application number
KR1019950018539A
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Korean (ko)
Inventor
문환성
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950018539A priority Critical patent/KR970003648A/en
Publication of KR970003648A publication Critical patent/KR970003648A/en

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  • Cleaning Or Drying Semiconductors (AREA)

Abstract

본 발명은 반도체 소자의 산화막 제거방법에 관한 것으로, 발생된 기포의 흡착으로 인한 신화막 제거 능력의 저하를 방지하기 위하여 불산희석액의 표면 장력을 감소시켜 기포의 흡착력을 약화시키므로써 소자의 특성을 향상시킬 수 있도록 한 반도체 소자의 산화막 제거방법에 관한 것이다.The present invention relates to a method for removing an oxide film of a semiconductor device, in order to reduce the surface tension of the fluorine diluent to weaken the adsorption force of the bubble in order to prevent the deterioration of the film removal ability due to the adsorption of generated bubbles to improve the characteristics of the device. The present invention relates to a method for removing an oxide film of a semiconductor device.

Description

반도체 소자의 산화막 제거방법Oxide removal method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 제1A도 의 "X" 부분의 상세도.FIG. 2 is a detail of the "X" portion of FIG. 1A.

Claims (2)

반도체 소자의 산화막 제거방법에 있어서, 기포의 흡착력을 약화시키기 위하여 불산: 에틸알콜 : 초순수가 소정의 비율로 혼합된 불산희석액을 사용하여 웨이퍼상에 형성된 산화막을 제거시키는 것을 특징으로 하는 반도체 소자의 산화막 제거방법.A method of removing an oxide film of a semiconductor device, wherein the oxide film formed on a wafer is removed by using a hydrofluoric acid diluent mixed with hydrofluoric acid: ethyl alcohol: ultrapure water in a predetermined ratio to weaken the adsorption force of bubbles. How to remove. 제1항에 있어서, 상기 불산 : 에틸알콜 : 초순수의 혼합비는 1 :40 내지 50 : 5인 것을 특징으로 하는 반도체 소자의 산화막 제거방법.The method of claim 1, wherein the mixing ratio of hydrofluoric acid: ethyl alcohol: ultrapure water is 1:40 to 50: 5. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950018539A 1995-06-30 1995-06-30 Oxide removal method of semiconductor device KR970003648A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950018539A KR970003648A (en) 1995-06-30 1995-06-30 Oxide removal method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950018539A KR970003648A (en) 1995-06-30 1995-06-30 Oxide removal method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970003648A true KR970003648A (en) 1997-01-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950018539A KR970003648A (en) 1995-06-30 1995-06-30 Oxide removal method of semiconductor device

Country Status (1)

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KR (1) KR970003648A (en)

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