KR910004852A - 단결정 cvd 다이아몬드의 제조 방법 - Google Patents

단결정 cvd 다이아몬드의 제조 방법 Download PDF

Info

Publication number
KR910004852A
KR910004852A KR1019900012793A KR900012793A KR910004852A KR 910004852 A KR910004852 A KR 910004852A KR 1019900012793 A KR1019900012793 A KR 1019900012793A KR 900012793 A KR900012793 A KR 900012793A KR 910004852 A KR910004852 A KR 910004852A
Authority
KR
South Korea
Prior art keywords
hydrocarbon
temperature
single crystal
metallocene
cvd diamond
Prior art date
Application number
KR1019900012793A
Other languages
English (en)
Inventor
라차드 안토니 토마스
풀튼 플라이셔 제임스
Original Assignee
아더 엠. 킹
제네랄 일렉트릭 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아더 엠. 킹, 제네랄 일렉트릭 캄파니 filed Critical 아더 엠. 킹
Publication of KR910004852A publication Critical patent/KR910004852A/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/279—Diamond only control of diamond crystallography
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/274—Diamond only using microwave discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C30B25/105—Heating of the reaction chamber or the substrate by irradiation or electric discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Combustion & Propulsion (AREA)
  • Plasma & Fusion (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음.

Description

단결정 CVD 다이아몬드의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 플라즈마를 생성시키기 위한 마이크로 웨이브 발생기 및 HPHT다이아몬드 단결정 씨드(seed)를 올려놓는 실리콘 대(pedestal)를 사용하는, 다이아몬드 성장의 바람직한 증착 공정을 도시하는 도이다.

Claims (5)

  1. 철, 코발트 및 니켈로 이루어진 군중에서 선택된 금속의 유기금속 화합물인 효과량의 메탈로센 또는 그의 열분해 생성물의 존재하에 약 800℃ 내지 1000℃의 온도 및 5 내지 15토르의 압력에서, 탄화수소-수소 혼합물중의 탄화수소가 탄화수소와 수소의 총 부피를 기준으로 약 0.5 내지 1.5부피%의 농도를 갖고 주위 조건하에서 0.1토르의 증기압을 유지할 수 있는 탄화수소-수소 혼합물을 최소한 0.1 캐럿의 HPHT 다이몬드 씨드(seed)와 접촉시킴을 포함하는, 이차적인 핵형성을 억제하면서 다이아몬드 단결정을 성장시키는 방법.
  2. 제1항에 있어서, 메탈로센이 페로센인 방법.
  3. 제1항에 있어서, 탄화수소가 메탄인 방법.
  4. 제1항에 있어서, 마이크로웨이브 플라즈마에 의해 온도를 유지하는 방법.
  5. 제1항에 있어서, 가열된 필라멘트를 사용하여 온도를 유지하는 방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900012793A 1989-08-21 1990-08-20 단결정 cvd 다이아몬드의 제조 방법 KR910004852A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39625389A 1989-08-21 1989-08-21
US07/396,253 1989-08-21

Publications (1)

Publication Number Publication Date
KR910004852A true KR910004852A (ko) 1991-03-29

Family

ID=23566485

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900012793A KR910004852A (ko) 1989-08-21 1990-08-20 단결정 cvd 다이아몬드의 제조 방법

Country Status (6)

Country Link
EP (1) EP0413974B1 (ko)
JP (1) JPH03141199A (ko)
KR (1) KR910004852A (ko)
DE (1) DE69012488T2 (ko)
IE (1) IE902399A1 (ko)
ZA (1) ZA906220B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH059735A (ja) * 1991-07-09 1993-01-19 Kobe Steel Ltd ダイヤモンドの気相合成方法
US8882872B2 (en) * 2011-10-04 2014-11-11 Baker Hughes Incorporated Graphite coated metal nanoparticles for polycrystalline diamond compact synthesis
CN114101685B (zh) * 2021-09-29 2023-06-09 北京环境特性研究所 一种低频雷达波吸收剂及其制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1298369A (en) * 1970-05-01 1972-11-29 Inst Fizicheskoi Khim An Sssr A method of synthesising diamond

Also Published As

Publication number Publication date
JPH03141199A (ja) 1991-06-17
ZA906220B (en) 1991-07-31
DE69012488D1 (de) 1994-10-20
IE902399A1 (en) 1991-02-27
EP0413974A1 (en) 1991-02-27
EP0413974B1 (en) 1994-09-14
DE69012488T2 (de) 1995-05-04

Similar Documents

Publication Publication Date Title
US20070290408A1 (en) Annealing single crystal chemical vapor deposition diamonds
AU614605B2 (en) Diamond growth
KR920002479A (ko) 동위원소적으로 순수한 단결정 에피텍셜(epitaxial) 다이아몬드 필름 및 그의 제조방법
KR910012348A (ko) 매우 높은 열전도율을 가진 단결정 다이아몬드
KR950006035A (ko) 저온에서 결정성 탄화규소 피막을 형성시킨 방법
Badzian et al. Nucleation and growth phenomena in chemically vapor-deposited diamond coatings
Srikanth Review of advances in diamond thin film synthesis
KR910004852A (ko) 단결정 cvd 다이아몬드의 제조 방법
Anthony Synthesis of metastable diamond
JPS6270295A (ja) ｎ型半導体ダイヤモンド膜の製造法
CA1337546C (en) Bonding diamond to diamond
Ghandhi et al. Low‐temperature growth of HgTe and HgCdTe using methylallyltelluride
Bonnot Synthesis of diamond thin films by hot-filament-assisted chemical vapour deposition
RU2054056C1 (ru) Способ получения изотопически чистых алмазных пленок
Komplin et al. CHLORINE-ASSISTED CHEMICAL VAPOR DEPOSITION OF DIAMOND FILMS AT LOW TEMPERATURES
JP2579926B2 (ja) ダイヤモンドの製造方法
Simakov et al. Metastable nanosized diamond formation from fluid phase
Yan et al. Twinning and defects in large area chemical vapor deposited homoepitaxial diamond
Chu et al. Characterization of diamond synthesized with halogenated methane in a microwave discharge
JPS62202809A (ja) 熱分解黒鉛の製造方法
Setaka Critical Assessment of State-of-the-Art of Growing Diamond
JPH0656583A (ja) ダイアモンド薄膜の堆積方法

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
NORF Unpaid initial registration fee