KR910001953A - Semiconductor devices - Google Patents

Semiconductor devices Download PDF

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Publication number
KR910001953A
KR910001953A KR1019900008973A KR900008973A KR910001953A KR 910001953 A KR910001953 A KR 910001953A KR 1019900008973 A KR1019900008973 A KR 1019900008973A KR 900008973 A KR900008973 A KR 900008973A KR 910001953 A KR910001953 A KR 910001953A
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KR
South Korea
Prior art keywords
solder
heat sink
semiconductor
driving
insulating plate
Prior art date
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KR1019900008973A
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Korean (ko)
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KR0183010B1 (en
Inventor
가쯔요시 이자와
료오이찌 고바야시
마사유끼 오자와
Original Assignee
미다 가쓰시게
가부시기가이샤 히다찌 세이사꾸쇼
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Publication of KR910001953A publication Critical patent/KR910001953A/en
Application granted granted Critical
Publication of KR0183010B1 publication Critical patent/KR0183010B1/en

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Abstract

내용 없음No content

Description

반도체 장치Semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 의한 반도체 장치의 구성도.1 is a configuration diagram of a semiconductor device according to the present invention.

제2도는 내구시험의 결과를 나타낸 도.2 is a view showing the results of the endurance test.

제3도 내지 제5도는 본 발명의 변형예를 나타낸 도이다.3 to 5 are diagrams showing a modification of the present invention.

Claims (2)

작동기 등을 구동하는 반도체 구동소자와, 상기 반도체 구동소자와 땜납을 거쳐 직접 또는 땜납, 방열판 및 땜납을 거쳐 접합된 절연판과, 상기 절연판과 중량비 505/505륵 가지는 납-주석 합금땜납을 거쳐 접합된 금속 방열판으로 이루어진 반도체장치.A semiconductor driving element for driving an actuator or the like, an insulating plate bonded directly or through solder, a heat sink and solder through the semiconductor driving element and solder, and the insulating plate having a weight ratio of 50 5/50 5 륵 is a semiconductor device consisting of a metal heat sink joined via a lead-tin alloy solder. 작동기 등을 구동하는 반도체 구동소자와, 상기 반도체 구동소자와 땜납을 거쳐 직접 또는 땜납, 방열판 및 땜납을 거쳐 접합된 절연판과, 상기 절연판과 하기에 나타낸 특성을 구비한 땜납에 의하여 접합된 금속 방열판에 있어서, 상기 땜납은 -55℃하에서 1시간방치, +150℃이하에서 1시간 방치한 상태를 1사이클로 하여 대략 2000사이클을 경과해도 균열이 발생하지 않는 납-주석 합금땜납으로 이루어진 반도체장치.A semiconductor drive element for driving an actuator or the like, an insulating plate bonded directly or through solder, a heat sink and a solder through the semiconductor drive element and a solder, and a metal heat sink joined by a solder having the characteristics shown below. The semiconductor device according to claim 1, wherein the solder is made of lead-tin alloy solder that does not generate cracks even after approximately 2000 cycles with 1 cycle left for 1 hour at −55 ° C. and 1 hour at + 150 ° C. or less. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900008973A 1989-06-28 1990-06-19 Semiconductor device having particular solder interconnection arrangement KR0183010B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1-163990 1989-06-28
JP1163990A JP2609724B2 (en) 1989-06-28 1989-06-28 Semiconductor device
JP89-163990 1989-06-28

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KR910001953A true KR910001953A (en) 1991-01-31
KR0183010B1 KR0183010B1 (en) 1999-03-20

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KR (1) KR0183010B1 (en)
DE (1) DE4020577C3 (en)
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JPH05136304A (en) * 1991-11-14 1993-06-01 Mitsubishi Electric Corp Semiconductor module and power controller using same
JP2838625B2 (en) * 1992-09-08 1998-12-16 株式会社日立製作所 Semiconductor module
DE4300516C2 (en) * 1993-01-12 2001-05-17 Ixys Semiconductor Gmbh Power semiconductor module
KR100322177B1 (en) 1993-12-27 2002-05-13 이누이 도모지 Ignition Device for Internal Combustion Engines
DE19609929B4 (en) * 1996-03-14 2006-10-26 Ixys Semiconductor Gmbh The power semiconductor module

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GB1122238A (en) * 1964-11-18 1968-07-31 English Electric Co Ltd Semi-conductor device
JPS5344176A (en) * 1976-10-04 1978-04-20 Hitachi Cable Ltd Clad solder for semiconductor device
DE3009925C2 (en) * 1980-03-14 1984-03-08 Siemens AG, 1000 Berlin und 8000 München Contact piece for an electrical vacuum switch
JPS57114242A (en) * 1981-01-07 1982-07-16 Hitachi Ltd Semiconductor device
JPS5982734A (en) * 1982-11-04 1984-05-12 Hitachi Ltd Insulation type semiconductor device
JPS6010633A (en) * 1983-06-30 1985-01-19 Fujitsu Ltd Semiconductor device
DE3513530A1 (en) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie METHOD FOR THE PRODUCTION OF PERFORMANCE SEMICONDUCTOR MODULES WITH INSULATED STRUCTURE
JPS6117355A (en) * 1984-07-03 1986-01-25 Hitachi Ltd Joining of different members by soldering
DE3523808C3 (en) * 1984-07-03 1995-05-04 Hitachi Ltd Process for soldering parts of an electronic arrangement made of different materials and its use
JPS61139047A (en) * 1984-12-11 1986-06-26 Toshiba Corp Semiconductor device

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DE4020577A1 (en) 1991-01-10
DE4020577C3 (en) 1998-11-12
GB2233593B (en) 1993-11-10
GB2233593A (en) 1991-01-16
KR0183010B1 (en) 1999-03-20
GB9014392D0 (en) 1990-08-22
JPH0330440A (en) 1991-02-08
DE4020577C2 (en) 1994-07-07

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