KR900019376A - 아날로그 스위치회로 - Google Patents

아날로그 스위치회로

Info

Publication number
KR900019376A
KR900019376A KR1019890007247A KR890007247A KR900019376A KR 900019376 A KR900019376 A KR 900019376A KR 1019890007247 A KR1019890007247 A KR 1019890007247A KR 890007247 A KR890007247 A KR 890007247A KR 900019376 A KR900019376 A KR 900019376A
Authority
KR
South Korea
Prior art keywords
switch circuit
analog switch
analog
circuit
switch
Prior art date
Application number
KR1019890007247A
Other languages
English (en)
Other versions
KR920004339B1 (ko
Inventor
오사무 고바야시
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR900019376A publication Critical patent/KR900019376A/ko
Application granted granted Critical
Publication of KR920004339B1 publication Critical patent/KR920004339B1/ko

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10Modifications for increasing the maximum permissible switched voltage
    • H03K17/102Modifications for increasing the maximum permissible switched voltage in field-effect transistor switches
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02Sample-and-hold arrangements
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C27/00Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/02Sample-and-hold arrangements
    • G11C27/024Sample-and-hold arrangements using a capacitive memory element
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6871Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the output circuit comprising more than one controlled field-effect transistor
KR1019890007247A 1988-05-31 1989-05-30 아날로그 스위치회로 KR920004339B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63133657A JP2591066B2 (ja) 1988-05-31 1988-05-31 アナログスイッチ回路
JP88-133657 1988-05-31

Publications (2)

Publication Number Publication Date
KR900019376A true KR900019376A (ko) 1990-12-24
KR920004339B1 KR920004339B1 (ko) 1992-06-01

Family

ID=15109894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890007247A KR920004339B1 (ko) 1988-05-31 1989-05-30 아날로그 스위치회로

Country Status (5)

Country Link
US (1) US5019731A (ko)
EP (1) EP0345156B1 (ko)
JP (1) JP2591066B2 (ko)
KR (1) KR920004339B1 (ko)
DE (1) DE68908280T2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140060585A (ko) * 2009-10-30 2014-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0468714A (ja) * 1990-07-04 1992-03-04 Matsushita Electric Ind Co Ltd 半導体集積回路装置
JPH05335919A (ja) * 1992-06-03 1993-12-17 Mitsubishi Electric Corp 半導体集積回路装置
DE4237925C2 (de) * 1992-11-10 1994-09-15 Fraunhofer Ges Forschung GaAs-FET-Analogschalter
US5548238A (en) * 1993-10-01 1996-08-20 Cirrus Logic Inc. Low power high speed CMOS current switching circuit
JP3156194B2 (ja) * 1995-05-31 2001-04-16 モトローラ株式会社 アナログスイッチ用オフセットキャンセル回路
US6781434B2 (en) * 2000-12-28 2004-08-24 Intel Corporation Low charge-dump transistor switch
US6448838B1 (en) 2001-03-16 2002-09-10 Semiconductor Components Industries Llc Circuit and method for high-speed break-before-make electronic switch
US7969203B1 (en) * 2009-12-03 2011-06-28 Nxp B.V. Switch-body PMOS switch with switch-body dummies
US7936187B1 (en) * 2009-12-03 2011-05-03 Nxp B.V. Switch-body NMOS-PMOS switch with complementary clocked switch-body NMOS-PMOS dummies
CN107533826B (zh) * 2015-06-02 2020-10-30 伊英克公司 用于驱动显示器的设备
US10505579B2 (en) * 2018-02-02 2019-12-10 Samsung Electro-Mechanics Co., Ltd. Radio frequency switching device for fast switching operation

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55163694A (en) * 1979-06-01 1980-12-19 Fujitsu Ltd Sample holding circuit
US4308468A (en) * 1979-11-15 1981-12-29 Xerox Corporation Dual-FET sample and hold circuit
JPS5894232A (ja) * 1981-11-30 1983-06-04 Toshiba Corp 半導体アナログスイッチ回路
JPS59117318A (ja) * 1982-12-24 1984-07-06 Hitachi Ltd 半導体スイツチング回路
JPS59127420A (ja) * 1983-01-10 1984-07-23 Nec Corp 論理回路
US4651037A (en) * 1983-06-07 1987-03-17 Nec Corporation Precision analog switching circuit employing MOS transistors
JPS6090425A (ja) * 1983-10-24 1985-05-21 Nec Corp 半導体装置
JPS6090245A (ja) * 1983-10-25 1985-05-21 Japan Synthetic Rubber Co Ltd ポリフエニレンエ−テル樹脂組成物
JPS62114538U (ko) * 1986-01-08 1987-07-21
JPS6350208A (ja) * 1986-08-20 1988-03-03 Sony Corp スイツチ回路
JPH0690425A (ja) * 1992-09-09 1994-03-29 Canon Inc 電子スチルカメラおよびスチルディスクカートリッジ
JPH06350208A (ja) * 1993-06-10 1994-12-22 Canon Inc フレキシブルプリント回路板

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140060585A (ko) * 2009-10-30 2014-05-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
KR20160075783A (ko) * 2009-10-30 2016-06-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 논리 회로 및 반도체 장치
US9722086B2 (en) 2009-10-30 2017-08-01 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device

Also Published As

Publication number Publication date
KR920004339B1 (ko) 1992-06-01
JP2591066B2 (ja) 1997-03-19
EP0345156A3 (en) 1990-10-17
US5019731A (en) 1991-05-28
DE68908280T2 (de) 1993-11-25
DE68908280D1 (de) 1993-09-16
EP0345156B1 (en) 1993-08-11
JPH01303809A (ja) 1989-12-07
EP0345156A2 (en) 1989-12-06

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Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19960517

Year of fee payment: 5

LAPS Lapse due to unpaid annual fee