KR900019158A - Substrate rotating surface treatment device - Google Patents

Substrate rotating surface treatment device Download PDF

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Publication number
KR900019158A
KR900019158A KR1019900006347A KR900006347A KR900019158A KR 900019158 A KR900019158 A KR 900019158A KR 1019900006347 A KR1019900006347 A KR 1019900006347A KR 900006347 A KR900006347 A KR 900006347A KR 900019158 A KR900019158 A KR 900019158A
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KR
South Korea
Prior art keywords
substrate
gas
substrate processing
surface treatment
chamber
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KR1019900006347A
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Korean (ko)
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KR930010055B1 (en
Inventor
마사또 다나까
바라 가오루 신
Original Assignee
이시다 아키라
다이닛뽕스쿠린세이소오 가부시키가이샤
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Application filed by 이시다 아키라, 다이닛뽕스쿠린세이소오 가부시키가이샤 filed Critical 이시다 아키라
Publication of KR900019158A publication Critical patent/KR900019158A/en
Application granted granted Critical
Publication of KR930010055B1 publication Critical patent/KR930010055B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/02—Lapping machines or devices; Accessories designed for working surfaces of revolution

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

내용 없음No content

Description

기판회전식 표면처리장치Substrate rotating surface treatment device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도(a)는 제1실시예의 기판회전식 표면처리장치의 단면도, 제2도는 쳄버 반단면의 사시도, 제3도는 다공판을 제거한 상태의 쳄버의 일부파단 저면도FIG. 1 (a) is a cross-sectional view of the substrate rotating surface treatment apparatus of the first embodiment, FIG. 2 is a perspective view of a half section of the chamber, and FIG. 3 is a partially broken bottom view of the chamber with the porous plate removed.

Claims (4)

기판을 수평한 자세로 보지하고, 연직방향의 축심주위로 수평회전하는 기판보지수단과, 상기 기판 보지수단으로 보지된 기판의 표면에 기판처리용 가스를 공급하는 기판처리용 가스공급 수단과를 구비한 기판회전식 표면처리장치에 있어서, 상기 기판처리용 가스공급수단은, 수평 회전하는 기판의 상방에, 기판과 근접하여서, 기판을 덮어싸도록 배치된 정류판과, 이 정류판에 형성한 가스 유출구와, 이 가스 유출구로 부터의 기판처리용 가스의 유출압력을, 기판의 회전중심으로 부터 떨어진 측일 수록 높게 되도록 한 유출압력 조정수단으로 구성된 것을 특징으로 하는 기판회전식 표면처리장치.Substrate holding means for holding the substrate in a horizontal position and rotating horizontally around the axis in the vertical direction, and gas supply means for substrate processing for supplying the substrate processing gas to the surface of the substrate held by the substrate holding means; In one substrate rotating surface treatment apparatus, the substrate processing gas supply means includes a rectifying plate disposed above the substrate that is horizontally rotated so as to cover the substrate, and a gas outlet formed on the rectifying plate. And outflow pressure adjusting means for raising the outflow pressure of the substrate processing gas from the gas outlet to the higher side away from the rotational center of the substrate. 특허청구의 범위 제1항에 있어서, 상기 유출압력 조정수단은, 천정판부와 그의 하방으로 돌출한 주벽부로 이루어진 쳄버와, 상기 주벽부에 전류판을 설치하고, 천정판부와 주벽부와 정류판에 의하여 포위되는 기판처리용 공급실과, 상기 쳄버의 직경방향에 대하여 수평방향으로 경사진 방향에서 상기 기판처리용 가스공급실로 기판처리용 가스를 공급하도록 주벽부에 설치한 가스 유입구로 구성됨을 특징으로 하는 기판회전식 표면처리장치.The method of claim 1, wherein the outflow pressure adjusting means includes a chamber including a ceiling plate portion and a main wall portion protruding downward, and a current plate is provided in the main wall portion, and the ceiling plate portion, the main wall portion, and a rectifying plate are provided. And a gas inlet provided in the main wall to supply the substrate processing gas to the substrate processing gas supply chamber in a direction inclined horizontally with respect to the radial direction of the chamber. Substrate rotating surface treatment device. 특허청구의 범위 제2항에 있어서, 상기 기판보지수단은 상기 기판을 수평으로 보지하도록 구성됨을 특징으로 하는 기판회전식 표면처리장치.The substrate rotating surface treatment apparatus according to claim 2, wherein the substrate holding means is configured to hold the substrate horizontally. 특허청구의 범위 제1항에 있어서, 상기 유출압력 조정수단은, 천정판부와 그의 하방으로 돌출한 주벽부로 이루어진 쳄버와, 상기 주벽부에 정류판을 설치되고, 천정판부와 주벽부와 정류판으로 포위되는 기판처리용 가스공급실과, 상기 천정판부의 중앙개소에 설치하여 기판처리용 가스공급실로 기판처리용 가스를 공급하는 가스유입구와, 상기 기판처리용 가스 공급실내에 설치되고, 가스유입구로부터 공급되는 기판처리용 가스를, 주벽부측에 우회시키면서 가스 유출구를 공급하는 차폐판으로 구성됨을 특징으로 하는 기판회전식 표면처리장치.The method of claim 1, wherein the outflow pressure adjusting means comprises a chamber comprising a ceiling plate portion and a circumferential wall portion protruding downward, and a rectifying plate is provided on the circumferential wall portion, A gas supply chamber for enclosing the substrate, a gas inlet for supplying the substrate processing gas to the gas supply chamber for the substrate processing at a central location of the ceiling plate portion, and a gas inlet provided in the substrate processing gas supply chamber and supplied from the gas inlet. A substrate rotating surface treatment apparatus comprising a shielding plate for supplying a gas outlet while bypassing a gas for processing the substrate to the circumferential wall side. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019900006347A 1989-05-06 1990-05-04 Surface treating apparatus for semicondcutor manufacturing process KR930010055B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP89-113923 1989-05-06
JP1-113923 1989-05-06
JP11392389 1989-05-06

Publications (2)

Publication Number Publication Date
KR900019158A true KR900019158A (en) 1990-12-24
KR930010055B1 KR930010055B1 (en) 1993-10-14

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Application Number Title Priority Date Filing Date
KR1019900006347A KR930010055B1 (en) 1989-05-06 1990-05-04 Surface treating apparatus for semicondcutor manufacturing process

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JP (1) JPH0744168B2 (en)
KR (1) KR930010055B1 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2583152B2 (en) * 1990-11-06 1997-02-19 大日本スクリーン製造株式会社 Substrate rotating surface treatment method
EP0854210B1 (en) * 1996-12-19 2002-03-27 Toshiba Ceramics Co., Ltd. Vapor deposition apparatus for forming thin film
US6415804B1 (en) * 1999-12-23 2002-07-09 Lam Research Corporation Bowl for processing semiconductor wafers
WO2020054424A1 (en) * 2018-09-10 2020-03-19 東京エレクトロン株式会社 Application-film forming method and application-film forming device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60194334A (en) * 1984-03-16 1985-10-02 Hitachi Ltd Apparatus for monitoring exciting fluorescence
JPS60194334U (en) * 1984-06-04 1985-12-24 株式会社東芝 Semiconductor wafer cleaning equipment
JPS6358932A (en) * 1986-08-29 1988-03-14 Tokyo Electron Ltd Ashing apparatus
JP2555034B2 (en) * 1986-09-17 1996-11-20 株式会社日立製作所 Processing equipment

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Publication number Publication date
KR930010055B1 (en) 1993-10-14
JPH0380537A (en) 1991-04-05
JPH0744168B2 (en) 1995-05-15

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