KR910007098A - Wafer support jig and pressure reduction gas growth method using this jig - Google Patents

Wafer support jig and pressure reduction gas growth method using this jig Download PDF

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Publication number
KR910007098A
KR910007098A KR1019890012753A KR890012753A KR910007098A KR 910007098 A KR910007098 A KR 910007098A KR 1019890012753 A KR1019890012753 A KR 1019890012753A KR 890012753 A KR890012753 A KR 890012753A KR 910007098 A KR910007098 A KR 910007098A
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KR
South Korea
Prior art keywords
jig
ring
wafer
growth method
wafer support
Prior art date
Application number
KR1019890012753A
Other languages
Korean (ko)
Other versions
KR920006572B1 (en
Inventor
요오지 다까기
Original Assignee
마고시 고오지
도오요꼬 가가꾸 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 마고시 고오지, 도오요꼬 가가꾸 가부시끼가이샤 filed Critical 마고시 고오지
Publication of KR910007098A publication Critical patent/KR910007098A/en
Application granted granted Critical
Publication of KR920006572B1 publication Critical patent/KR920006572B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment

Abstract

내용 없음.No content.

Description

웨이퍼 지지용치구 및 이 치구를 사용하는 감압기상 성장방법Wafer support jig and pressure reduction gas growth method using this jig

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 실시예를 나타내는 사시도.1 is a perspective view showing an embodiment of the present invention.

제2도는 본 발명의 치구를 가로형 감압기상 성장장치에 적용할 경우의 측면도.Figure 2 is a side view when applying the jig of the present invention to the horizontal pressure reducer growth apparatus.

제4도는 본 발명의 치구를 세로형 감압기상 성정장치에 적용할 경우의 측면도.4 is a side view when the jig of the present invention is applied to a vertical pressure reducing device.

Claims (4)

내열성재료에서 중앙이 개구된 링모양으로 형성되고, 이 링의 복수개소에 지주에 고정되는 돌출부를 형성하며, 이 돌출부내면은 오목부를 형성한 것을 특징으로 하는, 감압기상 성장법에 사용하는 웨이퍼 지지용치구.A wafer support for use in the reduced pressure gas phase growth method, characterized in that the heat-resistant material is formed in a ring shape having an opening in the center thereof, and protruding portions fixed to the posts are formed in a plurality of places of the rings, and the inner surface of the protruding portions has formed recesses. Prosthesis. 제1항에 있어서, 상기 링모양치구 표면에 웨이퍼지지용 돌기를 형성하여 이루어지는 것을 특징으로하는 웨이퍼 지지용치구.The wafer support jig according to claim 1, wherein a wafer supporting protrusion is formed on the surface of the ring-shaped jig. 제1항에 있어서, 상기 링모양치구를 대략 원형의 링모양으로 형성하고 원형일부에 직선부를 형성하여 이루어지는 것을 특징으로 하는 웨이퍼 지지용치구.The wafer support jig according to claim 1, wherein the ring-shaped jig is formed in a substantially circular ring shape and a straight portion is formed in a circular portion. 내열성 재료에서 중앙이 개구된 링모양으로 형성되고, 이 링의 복수개소에 지주에 고정하는 돌출부를 형성하며, 이 돌출부 내면은 오목부를 형성하여 이루어지는 것을 링모양치구를 지주에 고정하고, 기판웨이퍼를 이 기판웨이퍼 표면이 상기 링모양치구에 면하도록 배치하여, 반응관내에서 기상성장시키는 것을 특징으로 하는 감압기상 성장방법.In the heat-resistant material, the center is formed in a ring shape with an opening, and a plurality of the rings are formed with projections for fixing to the support, and the inner surface of the projections is formed with a recess to fix the ring-shaped jig to the support, and the substrate wafer is fixed. The substrate wafer growth method is characterized in that the surface of the substrate wafer to face the ring-shaped jig, and the vapor phase growth in the reaction tube. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890012753A 1989-03-20 1989-09-04 Jig for wafer holder KR920006572B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-30891 1989-03-20
JP1989030891U JP2537563Y2 (en) 1989-03-20 1989-03-20 Vertical vacuum deposition equipment

Publications (2)

Publication Number Publication Date
KR910007098A true KR910007098A (en) 1991-04-30
KR920006572B1 KR920006572B1 (en) 1992-08-08

Family

ID=31256340

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1019890012753A KR920006572B1 (en) 1989-03-20 1989-09-04 Jig for wafer holder
KR1019890017771A KR900015261A (en) 1989-03-20 1989-12-01 Wafer support jig and pressure reduction gas growth method using this jig

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1019890017771A KR900015261A (en) 1989-03-20 1989-12-01 Wafer support jig and pressure reduction gas growth method using this jig

Country Status (2)

Country Link
JP (1) JP2537563Y2 (en)
KR (2) KR920006572B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100442700B1 (en) * 1998-11-27 2004-08-02 가부시키가이샤 무라타 세이사쿠쇼 Method of Forming Dielectric Thin Film Pattern and Method of Forming Laminate Pattern Comprising Dielectric Thin Film and Conductive Thin Film
KR100481829B1 (en) * 1997-05-30 2005-07-04 삼성전자주식회사 Wafer holding shield of semiconductor sputtering equipment

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1091391A1 (en) * 1999-10-05 2001-04-11 SICO Produktions- und Handelsges.m.b.H. Wafers holding boat
JP4526683B2 (en) * 2000-10-31 2010-08-18 株式会社山形信越石英 Quartz glass wafer support jig and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089282U (en) * 1983-11-28 1985-06-19 沖電気工業株式会社 Susceptor for vapor phase growth
JPH0715138Y2 (en) * 1986-02-07 1995-04-10 信越石英株式会社 Vertical storage jig
JPS62142839U (en) * 1986-03-04 1987-09-09

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100481829B1 (en) * 1997-05-30 2005-07-04 삼성전자주식회사 Wafer holding shield of semiconductor sputtering equipment
KR100442700B1 (en) * 1998-11-27 2004-08-02 가부시키가이샤 무라타 세이사쿠쇼 Method of Forming Dielectric Thin Film Pattern and Method of Forming Laminate Pattern Comprising Dielectric Thin Film and Conductive Thin Film

Also Published As

Publication number Publication date
JPH02122431U (en) 1990-10-08
KR900015261A (en) 1990-10-26
JP2537563Y2 (en) 1997-06-04
KR920006572B1 (en) 1992-08-08

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