KR900017909A - 구형의 친수성 규산, 이의 제조방법 및 이의 용도 - Google Patents

구형의 친수성 규산, 이의 제조방법 및 이의 용도 Download PDF

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Publication number
KR900017909A
KR900017909A KR1019890006567A KR890006567A KR900017909A KR 900017909 A KR900017909 A KR 900017909A KR 1019890006567 A KR1019890006567 A KR 1019890006567A KR 890006567 A KR890006567 A KR 890006567A KR 900017909 A KR900017909 A KR 900017909A
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KR
South Korea
Prior art keywords
silicic acid
hydrophilic silicic
spherical hydrophilic
temperature
spherical
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KR1019890006567A
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English (en)
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KR910004832B1 (ko
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파울리 잉고
클라인슈미트 페터
슈바르쯔 루돌프
Original Assignee
볼프강 메어크, 로렌쯔 크로이쯔빅흘러
데구사 아크티엔게젤샤프트
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Publication of KR900017909A publication Critical patent/KR900017909A/ko
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Publication of KR910004832B1 publication Critical patent/KR910004832B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
    • C01B33/181—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process
    • C01B33/183—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof by a dry process by oxidation or hydrolysis in the vapour phase of silicon compounds such as halides, trichlorosilane, monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof
    • C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/02—Amorphous compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/30—Particle morphology extending in three dimensions
    • C01P2004/32—Spheres
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/51—Particles with a specific particle size distribution
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/90—Other properties not specified above

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

내용 없음

Description

구형의 친수성 규산, 이의 제조방법 및 이의 용도
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 이산화규소의 입자크기 분포도이다.

Claims (4)

  1. 입자크기가 0.5 내지 10㎛, 바람직하게는 0.5 내지 4㎛, 특히 바람직하게는 1내지 3㎛이고 BET-표면적이 ＜50㎡/g, 바람직하게는 1내지 10㎡/g인 내공(inner pore)이 없는 치밀하고 딱딱한 비결정성 입자로 구성된 구형의 친수성 규산.
  2. 수증기 및 가스상의 사염화 규소를 300 내지 400℃의 온도로 각각 가열하고, 두 성분을 300 내지 400℃의 온도에서 2 : 1 내지 8 : 1의 H2O : SiCI4몰비로 서로 혼합하여, 가스상의 혼합물을 600내지 1200℃온도로 가열시킨 좁은 예비반응관을 통과시킨후, 계속해서 600내지 1000℃, 바람직하게는 700내지 800℃로 가열시킨 반응관을 100㎜이상 H2O-컬럼의 저합하에＞5초, 바람직하게는＞9초 동안 통과시켜, 반응폐기가스로 부터 반응생성물을 분리시킴을 특징으로 하여, 입자크기가 0.5내지 10㎛, 바람직하게는 0.5내지 4㎛, 특히 바람직하게는 1내지3㎛이고 BET-표면적이 ＜50㎡/g, 바람직하게는 1내지 10㎡/g인 내공이 없는 치밀하고 딱딱한 비결정성 입자로 구성된 구형의 친수성 규산의 제조방법.
  3. 전자부품 포장용수지에 충진물로서 사용하기 위한, 제1항에 따른 구형의 친수성 규산의 용도.
  4. 플라스틱-박에 점착방지제로서 사용하기 위한. 제1항에 따른 구형의 친수성 규산의 용도.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890006567A 1988-05-19 1989-05-17 구형의 친수성 규산, 이의 제조방법 및 이의 용도 KR910004832B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3817045 1988-05-19
DEP3817045.0-41 1988-05-19

Publications (2)

Publication Number Publication Date
KR900017909A true KR900017909A (ko) 1990-12-20
KR910004832B1 KR910004832B1 (ko) 1991-07-13

Family

ID=6354684

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890006567A KR910004832B1 (ko) 1988-05-19 1989-05-17 구형의 친수성 규산, 이의 제조방법 및 이의 용도

Country Status (4)

Country Link
US (1) US4976943A (ko)
JP (1) JPH0238306A (ko)
KR (1) KR910004832B1 (ko)
BR (1) BR8902288A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1010672A1 (en) 1998-12-17 2000-06-21 PIRELLI CAVI E SISTEMI S.p.A. Method and apparatus for forming an optical fiber preform by combustionless hydrolysis
JP5640920B2 (ja) * 2011-08-18 2014-12-17 信越化学工業株式会社 チタニアドープ石英ガラス及びその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE13400C (de) * R. SCHNEIDER in Düsseldorf Neuerungen an dem durch Patent 108866 geschützten Mahlwerk mit konoidischem Läufer
CA662036A (en) * 1963-04-30 L. Flemmert Gosta Production of hydrophilic silicon dioxide
DE973859C (de) * 1951-10-31 1960-06-30 Dow Corning Verfahren zur Herstellung feinverteilter hydrophober Kieselsaeure
JPH01145317A (ja) * 1987-12-01 1989-06-07 Nippon Shokubai Kagaku Kogyo Co Ltd 真球状シリカ微粒子の製法

Also Published As

Publication number Publication date
KR910004832B1 (ko) 1991-07-13
US4976943A (en) 1990-12-11
BR8902288A (pt) 1990-01-09
JPH0563409B2 (ko) 1993-09-10
JPH0238306A (ja) 1990-02-07

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