KR900012333A - 플라즈마를 이용한 유기물질의 제거방법 - Google Patents

플라즈마를 이용한 유기물질의 제거방법

Info

Publication number
KR900012333A
KR900012333A KR1019900000240A KR900000240A KR900012333A KR 900012333 A KR900012333 A KR 900012333A KR 1019900000240 A KR1019900000240 A KR 1019900000240A KR 900000240 A KR900000240 A KR 900000240A KR 900012333 A KR900012333 A KR 900012333A
Authority
KR
South Korea
Prior art keywords
plasma
organic substances
removing organic
substances
organic
Prior art date
Application number
KR1019900000240A
Other languages
English (en)
Other versions
KR940001646B1 (ko
Inventor
스조오 후지무라
게이스께 시나가와
겐이찌 히가즈다니
Original Assignee
후지쓰 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지쓰 가부시끼가이샤 filed Critical 후지쓰 가부시끼가이샤
Publication of KR900012333A publication Critical patent/KR900012333A/ko
Application granted granted Critical
Publication of KR940001646B1 publication Critical patent/KR940001646B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019900000240A 1989-01-10 1990-01-10 플라즈마를 이용한 유기물질의 제거방법 KR940001646B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP1-003303 1989-01-10
JP1003303A JP2890432B2 (ja) 1989-01-10 1989-01-10 有機物の灰化方法

Publications (2)

Publication Number Publication Date
KR900012333A true KR900012333A (ko) 1990-08-03
KR940001646B1 KR940001646B1 (ko) 1994-02-28

Family

ID=11553594

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900000240A KR940001646B1 (ko) 1989-01-10 1990-01-10 플라즈마를 이용한 유기물질의 제거방법

Country Status (5)

Country Link
US (1) US4983254A (ko)
EP (1) EP0379301B1 (ko)
JP (1) JP2890432B2 (ko)
KR (1) KR940001646B1 (ko)
DE (1) DE69023355D1 (ko)

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JPH0777211B2 (ja) * 1987-08-19 1995-08-16 富士通株式会社 アッシング方法
US5226056A (en) * 1989-01-10 1993-07-06 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing method and apparatus therefor
US5178989A (en) * 1989-07-21 1993-01-12 Board Of Regents, The University Of Texas System Pattern forming and transferring processes
EP0809283A3 (en) 1989-08-28 1998-02-25 Hitachi, Ltd. Method of treating wafers
US5228052A (en) * 1991-09-11 1993-07-13 Nihon Shinku Gijutsu Kabushiki Kaisha Plasma ashing apparatus
DE4132559A1 (de) * 1991-09-30 1993-04-08 Siemens Ag Verfahren zur in-situ-reinigung von abscheidekammern durch plasmaaetzen
DE4202158C1 (ko) * 1992-01-27 1993-07-22 Siemens Ag, 8000 Muenchen, De
DE4202651A1 (de) * 1992-01-30 1993-08-05 Fraunhofer Ges Forschung Verfahren zur trockenentwicklung einer siliziumhaltigen ultraviolett- und/oder elektronenstrahlempfindlichen lackschicht
KR100293830B1 (ko) * 1992-06-22 2001-09-17 리차드 에이치. 로브그렌 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법
US5387289A (en) * 1992-09-22 1995-02-07 Genus, Inc. Film uniformity by selective pressure gradient control
JP3231426B2 (ja) * 1992-10-28 2001-11-19 富士通株式会社 水素プラズマダウンフロー処理方法及び水素プラズマダウンフロー処理装置
US5445679A (en) * 1992-12-23 1995-08-29 Memc Electronic Materials, Inc. Cleaning of polycrystalline silicon for charging into a Czochralski growing process
DE4308990A1 (de) * 1993-03-20 1994-09-22 Bosch Gmbh Robert Ätzverfahren und Vorrichtung zur Reinigung von Halbleiterelementen, insbesondere Leistungsdioden
JPH06285868A (ja) * 1993-03-30 1994-10-11 Bridgestone Corp 加硫金型の清浄方法
JP2804700B2 (ja) * 1993-03-31 1998-09-30 富士通株式会社 半導体装置の製造装置及び半導体装置の製造方法
JP3288490B2 (ja) * 1993-07-09 2002-06-04 富士通株式会社 半導体装置の製造方法及び半導体装置の製造装置
EP0692140A1 (en) * 1994-02-03 1996-01-17 Applied Materials, Inc. Stripping, passivation and corrosion inhibition of semiconductor substrates
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
JP3438109B2 (ja) * 1994-08-12 2003-08-18 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
JPH08186098A (ja) * 1994-12-27 1996-07-16 Ryoden Semiconductor Syst Eng Kk 感光性樹脂の除去方法および除去装置
US5671116A (en) * 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5753567A (en) * 1995-08-28 1998-05-19 Memc Electronic Materials, Inc. Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma
US5835333A (en) * 1995-10-30 1998-11-10 Lam Research Corporation Negative offset bipolar electrostatic chucks
US5693147A (en) * 1995-11-03 1997-12-02 Motorola, Inc. Method for cleaning a process chamber
US5780359A (en) * 1995-12-11 1998-07-14 Applied Materials, Inc. Polymer removal from top surfaces and sidewalls of a semiconductor wafer
US5614026A (en) * 1996-03-29 1997-03-25 Lam Research Corporation Showerhead for uniform distribution of process gas
US5812361A (en) * 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5998305A (en) * 1996-03-29 1999-12-07 Praxair Technology, Inc. Removal of carbon from substrate surfaces
JPH09270421A (ja) 1996-04-01 1997-10-14 Mitsubishi Electric Corp 表面処理装置および表面処理方法
US6015761A (en) * 1996-06-26 2000-01-18 Applied Materials, Inc. Microwave-activated etching of dielectric layers
US5925577A (en) * 1997-02-19 1999-07-20 Vlsi Technology, Inc. Method for forming via contact hole in a semiconductor device
US7001848B1 (en) * 1997-11-26 2006-02-21 Texas Instruments Incorporated Hydrogen plasma photoresist strip and polymeric residue cleanup process for oxygen-sensitive materials
US6080680A (en) * 1997-12-19 2000-06-27 Lam Research Corporation Method and composition for dry etching in semiconductor fabrication
EP0940846A1 (en) * 1998-03-06 1999-09-08 Interuniversitair Micro-Elektronica Centrum Vzw Method for stripping ion implanted photoresist layer
US6387819B1 (en) * 1998-04-29 2002-05-14 Applied Materials, Inc. Method for etching low K dielectric layers
US6410417B1 (en) * 1998-11-05 2002-06-25 Promos Technologies, Inc. Method of forming tungsten interconnect and vias without tungsten loss during wet stripping of photoresist polymer
US6599829B2 (en) * 1998-11-25 2003-07-29 Texas Instruments Incorporated Method for photoresist strip, sidewall polymer removal and passivation for aluminum metallization
US6242350B1 (en) 1999-03-18 2001-06-05 Taiwan Semiconductor Manufacturing Company Post gate etch cleaning process for self-aligned gate mosfets
US6610168B1 (en) * 1999-08-12 2003-08-26 Sipec Corporation Resist film removal apparatus and resist film removal method
US20050022839A1 (en) * 1999-10-20 2005-02-03 Savas Stephen E. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6805139B1 (en) 1999-10-20 2004-10-19 Mattson Technology, Inc. Systems and methods for photoresist strip and residue treatment in integrated circuit manufacturing
US6440874B1 (en) * 2000-03-24 2002-08-27 Advanced Micro Devices, Inc. High throughput plasma resist strip process for temperature sensitive applications
US6440864B1 (en) 2000-06-30 2002-08-27 Applied Materials Inc. Substrate cleaning process
US6692903B2 (en) 2000-12-13 2004-02-17 Applied Materials, Inc Substrate cleaning apparatus and method
CN1461493A (zh) * 2000-12-18 2003-12-10 住友精密工业株式会社 清洗方法和腐蚀方法
JP2006019414A (ja) * 2004-06-30 2006-01-19 Canon Inc プラズマ処理装置
US20070193602A1 (en) * 2004-07-12 2007-08-23 Savas Stephen E Systems and Methods for Photoresist Strip and Residue Treatment in Integrated Circuit Manufacturing
US20070123049A1 (en) * 2005-11-17 2007-05-31 Kao-Su Huang Semiconductor process and method for removing condensed gaseous etchant residues on wafer
JP4946321B2 (ja) * 2006-09-29 2012-06-06 富士通セミコンダクター株式会社 基板処理装置及び基板処理方法
US20080296258A1 (en) * 2007-02-08 2008-12-04 Elliott David J Plenum reactor system
TWI576938B (zh) 2012-08-17 2017-04-01 斯克林集團公司 基板處理裝置及基板處理方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4699689A (en) * 1985-05-17 1987-10-13 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US4749440A (en) * 1985-08-28 1988-06-07 Fsi Corporation Gaseous process and apparatus for removing films from substrates
JPS62213126A (ja) * 1986-03-13 1987-09-19 Fujitsu Ltd マイクロ波プラズマ処理装置
EP0328350B1 (en) * 1988-02-09 1999-04-28 Fujitsu Limited Dry etching with hydrogen bromide or bromine
US4961820A (en) * 1988-06-09 1990-10-09 Fujitsu Limited Ashing method for removing an organic film on a substance of a semiconductor device under fabrication
JPH02174120A (ja) * 1988-12-27 1990-07-05 Toshiba Corp 有機高分子膜の除去方法

Also Published As

Publication number Publication date
JP2890432B2 (ja) 1999-05-17
KR940001646B1 (ko) 1994-02-28
EP0379301B1 (en) 1995-11-08
DE69023355D1 (de) 1995-12-14
US4983254A (en) 1991-01-08
JPH02183528A (ja) 1990-07-18
EP0379301A1 (en) 1990-07-25

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