KR900010217Y1 - Magnet assembly for a sputter - Google Patents

Magnet assembly for a sputter Download PDF

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Publication number
KR900010217Y1
KR900010217Y1 KR2019880017255U KR880017255U KR900010217Y1 KR 900010217 Y1 KR900010217 Y1 KR 900010217Y1 KR 2019880017255 U KR2019880017255 U KR 2019880017255U KR 880017255 U KR880017255 U KR 880017255U KR 900010217 Y1 KR900010217 Y1 KR 900010217Y1
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KR
South Korea
Prior art keywords
magnet assembly
cathode electrode
sputter
target material
rack gear
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KR2019880017255U
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Korean (ko)
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KR900008409U (en
Inventor
윤기천
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삼성전관 주식회사
김정배
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Priority to KR2019880017255U priority Critical patent/KR900010217Y1/en
Publication of KR900008409U publication Critical patent/KR900008409U/en
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Publication of KR900010217Y1 publication Critical patent/KR900010217Y1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3455—Movable magnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

내용 없음.No content.

Description

스퍼터용 마그테트 어셈블리Magnet Assembly for Sputter

제1도는 종래의 스퍼터용 마그네트어셈블리 구조를 나타내는 도면.1 is a view showing a conventional sputter magnet assembly structure.

제2도는 종래 스퍼터 장치의 타겟 물질이 변화된 상태를 나타낸 도면.2 is a view showing a state in which the target material of the conventional sputtering apparatus is changed.

제3도는 본 고안의 구성을 나타내는 측단면도.Figure 3 is a side cross-sectional view showing a configuration of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 음극전극 4 : 커버1 cathode electrode 4 cover

7,10 : 랙기어 9 : 피니온7,10: rack gear 9: pinion

M : 마그네트 어셈블리M: Magnet Assembly

본 고안은 유리판상에 크롬이나 알루미늄 또는 반도체 막과 같은 금속이나 절연막 등을 코팅하는 스퍼터용 마그네트 어셈블리에 관한 것이다.The present invention relates to a sputter magnet assembly for coating a metal or insulating film such as chromium, aluminum or a semiconductor film on a glass plate.

일반적으로 절연물과 산화물을 코팅할 때는 AC형 스퍼터링 장치가 사용되고, 금속물질을 코팅할때는 DC형 스퍼터링 장치가 사용된다.In general, AC type sputtering devices are used to coat insulators and oxides, and DC type sputtering devices are used to coat metallic materials.

이러한 스퍼터링 장치는 스퍼터의 속도를 향상시키고 고품질의 막을 얻기 위하여 음극전극에 마그네트를 설치하게 된다.This sputtering device is to install a magnet on the cathode electrode in order to improve the speed of the sputter and to obtain a high quality film.

제1도가 종래의 마그네트 어셈블리를 나타내는 도면으로서, 음극전극(1)에는 N극 마그네트(2)와 S극 마그네트(3)이 설치되어 커버(4)로 씌워져 있다.1 is a diagram showing a conventional magnet assembly, in which the cathode electrode 1 is provided with an N pole magnet 2 and an S pole magnet 3 and covered with a cover 4.

그리고, 음극전극(1)의 하측면에는 알루미늄이나 크롬으로 된 타겟물질(5)가 부착되어 있다.On the lower side of the cathode electrode 1, a target material 5 made of aluminum or chromium is attached.

이러한 구성으로 되는 마그네트 어셈블리는 진공분위기하에서 불활성 가스가 주입되면서 전압이 인가됨에 따라 플라즈마 방전이 일어나 타겟물질(5)와 대향 설치되어 있는 유리판(6)에 타겟물질이 코오팅 된다.The magnet assembly having such a configuration causes plasma discharge as the inert gas is injected under a vacuum atmosphere, so that the target material is coated on the glass plate 6 which is installed opposite to the target material 5.

그러나, N극 마그네트(2)와 S극 마그네트(3)에 의해 형성되는 자계방향과 전자계의 방향에 의하여 전자는 일정한 면만 스퍼터하게 되어 타겟물질(5)는 제2도에 도시한 바와 같이, 후육부(5a)와 박육부(5a)로 변환된다.However, due to the magnetic field direction and the direction of the electromagnetic field formed by the N-pole magnets 2 and the S-pole magnets 3, the electrons are only sputtered by a certain surface, so that the target material 5 is shown in FIG. It is converted into the meat part 5a and the thin part 5a.

이때 계속되는 스퍼터에 의해 박육부(5b)가 방전공간에 노출되면 음극전극이 손상을 입게되므로 타겟물질(5)가 부분적으로 음극전극(1)에 까지 스퍼터 되기전에 버려야 한다.At this time, when the thin portion 5b is exposed to the discharge space by the subsequent sputter, the cathode electrode is damaged, and thus the target material 5 should be discarded before the sputtered part to the cathode electrode 1.

이와 같이 절반정도의 사용으로 버려지는 타겟물질은 고가인 관계로 원가 상승의 주요인으로 작용하고 있다.As such, the target material discarded by about half of the use is expensive, and thus acts as a major factor in the cost increase.

본 고안은 전기한 종래의 스퍼터용 마그네트 어셈블리가 갖는 제반 문제점을 해소하고자 안출한 것으로서, 원가절감에 기여할 수 있는 스퍼터용 마그네트 어셈블리를 제공함에 그 목적이 있다.The present invention has been made to solve all the problems of the conventional sputter magnet assembly, the purpose of the present invention is to provide a sputter magnet assembly that can contribute to cost reduction.

이의 실현을 위하여 본 고안은 음극 전극에 설치되는 마그네트 어셈블리를 이동 가능케 설치하여 하면에 걸쳐 균등히 스퍼터 되도록 구성함을 그 특징으로 한다.In order to realize this, the present invention is characterized in that the magnet assembly installed on the cathode electrode is installed to be movable to sputter evenly over the lower surface.

이하 본 고안을 첨부한 도면에 의거하여 실시예에 따라 설명하면 다음과 같다.Hereinafter, the present invention will be described according to embodiments based on the accompanying drawings.

제3도가 본 고안의 구성을 나타내는 측단면도로서, 제1도와 동일가능의 부분에 대하여서는 동일부호로 지칭한다.3 is a side cross-sectional view showing the structure of the present invention, and the same reference numerals will be used to refer to the same parts as those of FIG.

음극전극(1)의 저면에는 타겟물질(5)가 부착되어 있으며, 상면에는 랙기어(7)이 고정 설치되어 있다.The target material 5 is attached to the bottom surface of the cathode electrode 1, and the rack gear 7 is fixed to the top surface of the cathode electrode 1.

N극 마그네트(2)와 S극 마그네트(3)이 부착판(8)에 고정 설치되어 이루어지는 마그네트 어셈블리(M)은 음극전극(1)보다 작게 형성된다. 마그네트 어셈블리(M)의 크기는 음극전극(1)의 3/4이 바람직하다.The magnet assembly M, in which the N pole magnet 2 and the S pole magnet 3 are fixed to the attachment plate 8, is formed smaller than the cathode electrode 1. The size of the magnet assembly M is preferably 3/4 of the cathode electrode 1.

마그네트 어셈블리(M)의 부착판(8)에는 피니온(9)가 회동가능하게 설치되어 전기한 랙기어 (7)과 치차물림 되어 있다.The pinion 9 is rotatably installed on the attachment plate 8 of the magnet assembly M, and is geared with the rack gear 7 which has been electrically mounted.

그리고 음극전극(1)에 복개되어 있는 커버(4)내에는 랙기어(10)이 설치되어 있으며 그 일측에 손잡이(10')가 형성되어 외부로 관통되어 있다.In addition, a rack gear 10 is installed in the cover 4 covered by the cathode electrode 1, and a handle 10 ′ is formed at one side thereof and penetrates to the outside.

이 랙기어(10)은 전기한 피니온(9)와 치차물림되어 손잡이(10')를 밀고 당김에 따라 마그네트 어셈블리(M)은 랙기어(7)상에서 이동되게 된다.The rack gear 10 is toothed with the pinion 9, and the magnet assembly M is moved on the rack gear 7 as the handle 10 'is pushed and pulled.

이와 같이 구성되는 본 고안은 진공도가 10-6Torr이 상이고, 아르곤 개스가 주입되는 분위기하에서 약 500-700V의 전압을 인가하게 되면 플라즈마 방전이 일어난다.The present invention configured as described above has a vacuum degree of 10 −6 Torr or higher and plasma discharge occurs when a voltage of about 500-700 V is applied in an atmosphere in which argon gas is injected.

플라즈마 방전이 일어남에 따라 마그네트 어셈블리(M)이 위치된 부분에는 전자계의 영향을 받아 부분적으로 스퍼터가 실시된다.As the plasma discharge occurs, the portion where the magnet assembly M is located is partially sputtered under the influence of the electromagnetic field.

이때 손잡이(10')를 밀거나 당기게 되면 랙기어(10)이 피니온(9)를 회전시키게 되어 랙기어(7)을 따라 마그네트 어셈블리(M)이 이송된다.In this case, when the handle 10 'is pushed or pulled, the rack gear 10 rotates the pinion 9 so that the magnet assembly M is transferred along the rack gear 7.

이렇게 하여 스퍼터가 된 부분은 자계의 영향을 받지 않게 되고 타겟물질(5)의 새로운 부분이 스퍼터가 된다.In this way, the sputtered portion is not affected by the magnetic field, and the new portion of the target material 5 becomes the sputter.

이러한 방식으로 마그네트 어셈블리(M)을 음극전극(1)상에 이동시키게 되면 저면의 타겟물질(5)는 전면에 걸쳐 스퍼터가 일어나게 된다.When the magnet assembly M is moved on the cathode electrode 1 in this manner, the target material 5 on the bottom surface is sputtered over the entire surface.

이상과 같이 본 고안은 마그네트 어셈블리를 음극전극상에서 이동시켜 타겟물질이 전면에 걸쳐 스퍼터 되게 하므로서 원가절감을 기할 수 있게 된다.As described above, the present invention can reduce the cost by moving the magnet assembly on the cathode electrode so that the target material is sputtered over the entire surface.

Claims (1)

N,S 극의 자석을 보유하고 음극전극(1)의 상단보다 작게 형성되는 마그네트 어셈블리(M)에 설치된 피니온(9)가 음극전극(1)의 상면에 고정 설치된 랙기어(7)과 전기한 음극전극(1)상에 복개되는 커버(4)의 내측으로 수행 이동 가능케 설치되는 랙기어(10)에 치합되어 구성됨을 특징으로 하는 스퍼터용 마그네트 어셈블리.The pinion 9 installed in the magnet assembly M, which has magnets of N and S poles and is formed smaller than the upper end of the cathode electrode 1, is fixed to the upper surface of the cathode electrode 1, and the electrical Sputter magnet assembly, characterized in that it is configured to be engaged with the rack gear (10) installed so as to be carried out to the inside of the cover (4) covered on one cathode electrode (1).
KR2019880017255U 1988-10-25 1988-10-25 Magnet assembly for a sputter KR900010217Y1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019880017255U KR900010217Y1 (en) 1988-10-25 1988-10-25 Magnet assembly for a sputter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019880017255U KR900010217Y1 (en) 1988-10-25 1988-10-25 Magnet assembly for a sputter

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KR900008409U KR900008409U (en) 1990-05-01
KR900010217Y1 true KR900010217Y1 (en) 1990-11-05

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000052123A (en) * 1999-01-29 2000-08-16 고기헌 Aaaaa
KR100444279B1 (en) * 2001-08-03 2004-08-11 이주영 Manufacturing method of decorative panel for building exterior and decorative panel
KR20240001531A (en) 2022-06-27 2024-01-03 써니사이드(주) Thin and Lightweight Composite Board

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20000052123A (en) * 1999-01-29 2000-08-16 고기헌 Aaaaa
KR100444279B1 (en) * 2001-08-03 2004-08-11 이주영 Manufacturing method of decorative panel for building exterior and decorative panel
KR20240001531A (en) 2022-06-27 2024-01-03 써니사이드(주) Thin and Lightweight Composite Board

Also Published As

Publication number Publication date
KR900008409U (en) 1990-05-01

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