KR900005560A - Electrode Formation Method of Thin Film Transistor - Google Patents

Electrode Formation Method of Thin Film Transistor Download PDF

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Publication number
KR900005560A
KR900005560A KR1019880012855A KR880012855A KR900005560A KR 900005560 A KR900005560 A KR 900005560A KR 1019880012855 A KR1019880012855 A KR 1019880012855A KR 880012855 A KR880012855 A KR 880012855A KR 900005560 A KR900005560 A KR 900005560A
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KR
South Korea
Prior art keywords
thin film
film transistor
electrode
drain
source
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KR1019880012855A
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Korean (ko)
Inventor
박원규
Original Assignee
최근선
주식회사 금성사
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Priority to KR1019880012855A priority Critical patent/KR900005560A/en
Publication of KR900005560A publication Critical patent/KR900005560A/en

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Abstract

내용 없음No content

Description

박막트랜지스터의 전극 형성방법Electrode Formation Method of Thin Film Transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 테이퍼된 게이트전극을 사용한 박막트랜지스터에 대한 개요도.2 is a schematic diagram of a thin film transistor using the tapered gate electrode of the present invention.

제3도는 본 발명 게이트 전극의 전해에칭장치에 대한 개요도.3 is a schematic diagram of an electrolytic etching apparatus of a gate electrode of the present invention.

Claims (5)

유리판(1)위에 게이트전극(2)을 형성하고, 절연막(3), 비정질실리콘(4), n+형비정질실리콘(5)을 형성한후 드레인(6), 소오스(7)를 형성하게 한 비정질실리콘 박막트랜지스터에 있어서, 상기 게이트전극(2)에 Cr층(22a)(22b)을 증착하고, 전해액(15)으로 에칭하여 경사진 게이트전극(8)으로 형성되는 것을 특징으로 하는 박막트랜지스터의 전극형성방법.The gate electrode 2 is formed on the glass plate 1, the insulating film 3, the amorphous silicon 4, and the n + type amorphous silicon 5 are formed, and then the drain 6 and the source 7 are formed. In the amorphous silicon thin film transistor, Cr layers 22a and 22b are deposited on the gate electrode 2, and the thin film transistor is formed as an inclined gate electrode 8 by etching with an electrolyte solution 15. Electrode formation method. 제1항에 있어서, CdSe를 사용한 박막트랜지스터에서 게이트전극(32)을 경사지게 하는 것을 특징으로 하는 박막트랜지스터의 전극형성방법.2. The method of forming a thin film transistor according to claim 1, wherein the gate electrode (32) is inclined in the thin film transistor using CdSe. 제1항에 있어서, 스태거전극형 박막트랜지스터에서 드레인(39), 소오스(43)가 경사지게 형성되는 것을 특징으로 하는 박막트랜지스터의 전극형성방법,The method of claim 1, wherein the drain 39 and the source 43 are formed to be inclined in the staggered electrode thin film transistor. 제1항에 있어서, 코플라나전극형 박막트랜지스터에서 드레인(46), 소오스(49)가 경사지게 형성되는 것을 특징으로 하는 박막트랜지스터의 전극형성방법.The method of claim 1, wherein the drain and the source are formed to be inclined in the coplanar electrode thin film transistor. 제1항에 있어서, 다른 코플라나전극형 박막트랜지스터에서 드레인(52), 소오스(53)가 경사지게 형성되는 것을 특징으로 하는 박막트랜지스터의 전극형성방법.2. The method of claim 1, wherein the drain (52) and the source (53) are formed to be inclined in another coplanar electrode type thin film transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880012855A 1988-09-30 1988-09-30 Electrode Formation Method of Thin Film Transistor KR900005560A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019880012855A KR900005560A (en) 1988-09-30 1988-09-30 Electrode Formation Method of Thin Film Transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880012855A KR900005560A (en) 1988-09-30 1988-09-30 Electrode Formation Method of Thin Film Transistor

Publications (1)

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KR900005560A true KR900005560A (en) 1990-04-14

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KR1019880012855A KR900005560A (en) 1988-09-30 1988-09-30 Electrode Formation Method of Thin Film Transistor

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KR (1) KR900005560A (en)

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