KR900005304B1 - Printed circuit board method for integrated circuit using - Google Patents

Printed circuit board method for integrated circuit using Download PDF

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KR900005304B1
KR900005304B1 KR1019880007839A KR880007839A KR900005304B1 KR 900005304 B1 KR900005304 B1 KR 900005304B1 KR 1019880007839 A KR1019880007839 A KR 1019880007839A KR 880007839 A KR880007839 A KR 880007839A KR 900005304 B1 KR900005304 B1 KR 900005304B1
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plate
copper plate
integrated circuit
copper
ceramic
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KR1019880007839A
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KR900001281A (en
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이항운
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삼성항공산업 주식회사
신훈철
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Abstract

The substrate for integrated circuit is produced by the stages of heating and oxidizing a copper plate at 220-230 deg.C under clean atmosphere to create oxidized layers on the surface of the plate, layering the oxidized plate with a ceramic plate, heating under the atmosphere of an inert gas e.g. nitroghen having no more than 10 ppm oxygne in furnace until the surface of the copper plate melts, cooling and heating at 1065-1083 deg. C to make eutectic melt between the copper plate and the ceramic plate, and cooling quickly.

Description

집적회로용 기판의 제조방법Manufacturing Method of Integrated Circuit Board

제1도는 본 발명의 공정을 나타내는 과정도.1 is a process diagram showing the process of the present invention.

제2도는 본 발명의 방법에 있어서 소재의 접착경로를 나타내는 그래프.2 is a graph showing the adhesive path of the material in the method of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 동판 2 : 세라믹판1: copper plate 2: ceramic plate

3 : 산화층3: oxide layer

본 발명의 금속과 비금속의 접착을 통하여 혼성집적회로의 접지판이나 기판을 제조하는 집적회로용 기판의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing an integrated circuit board for manufacturing a ground plate or a substrate of a hybrid integrated circuit through the bonding of a metal and a nonmetal of the present invention.

혼성집적회로의 접지판이나 기판은 통상 금속재 박판과 비금속재 판을 접착한 단층구조로 되어 있다.The ground plate and the substrate of the hybrid integrated circuit have a single layer structure in which a thin metal plate and a non-metal plate are bonded together.

여기서 금속재로는 주로 구리를 사용하고, 비금속재로는 세라믹이 쓰이고 있다.Here, copper is mainly used as the metal material, and ceramic is used as the nonmetal material.

금속과 비금속의 접착에는 통상적으로 접착매개물이 필요하게 되며, 접착매개물로는 흔히 납이나 전기저항이 이용되고 있다.Adhesion media are usually required for the adhesion of metals and non-metals, and lead or electrical resistance is often used as the adhesion media.

그런데 납이나 전지저항을 접착매개물로 이용하면 균일한 전기적 특성이 얻어지지 않으므로, 집적회로의 기판 제조에 활용할 수 없음은 잘 알려져 있는 바와 같다.However, when lead or battery resistance is used as an adhesive medium, since uniform electrical characteristics are not obtained, it is well known that it cannot be used for manufacturing an integrated circuit board.

한편, 기체를 접착매개물로 하고 금속의 공정점(Eutectic Point)이상으로 또한 융점이하의 온도로 가열하여 소성하는 기판의 제조방법이 제안되어 집적회로의 생산이 가능하게 되었다.On the other hand, a method of manufacturing a substrate is proposed in which a gas is used as an adhesive medium and heated above a eutectic point of a metal and heated to a temperature below a melting point, thereby producing an integrated circuit.

상기한 방법은 동판의 표면을 산화시킨 다음, 세라믹판과 접촉시킨 채로 소성하여 동판에 세라믹이 접착 되도록 하는 적이다.In the above method, the surface of the copper plate is oxidized and then fired while being in contact with the ceramic plate so that the ceramic adheres to the copper plate.

그러나 동판의 산화공정에서 앤플레이트(Enplate)용액을 사용하여 산화시키는 것이므로, 작업자는 섭씨 82-85도 사이로 유지되는 앤플레이트 용액에 동판을 직접 침지시키고 교반해주어 균일한 산화가 행해지도록 해야 하기 때문에 작업이 번잡하고, 게다가 앤플레이트 용액은 10%이상의 수산화나트륨을 함유하고 있어서 인체에 유독한 문제가 있다.However, in the oxidation process of copper plate, it is oxidized by using an Enplate solution, so the worker has to immerse and stir the copper plate directly in the anplate solution maintained between 82-85 degrees Celsius so that uniform oxidation can be performed. This troublesome and in addition, the anplate solution contains 10% or more sodium hydroxide, which is toxic to the human body.

그리고 앤플레이트 용액은 증발이 잘 되기 때문에 공정을 통하여 손실량이 크다.And since the n-plate solution evaporates well, the loss amount is large through the process.

본 발명의 목적은 구리와 세라믹을 접착하여 얻어지는 기판의 제조방법에 있어서, 동판의 산화공정을 개선하여 상술한 재문제점을 해결함에 있다.An object of the present invention is to solve the above-mentioned problem by improving the oxidation process of the copper plate in the method of manufacturing a substrate obtained by bonding copper and ceramic.

본 발명의 주된 특징은 동판을 청정공기 분위기에서 소정온도로 가열하여 산화시키고, 동판과 세라믹이 접촉된 상태에서 동판의 공정온도보다 높고 융점보다 낮은 온도로, 동판과 세라믹 사이에 공융(Eutectic Melt)이 형성되기에 충분한 시간동안 가열하여 행함에 있다.The main feature of the present invention is that the copper plate is heated and oxidized to a predetermined temperature in a clean air atmosphere, and at a temperature higher than the process temperature and lower than the melting point of the copper plate in contact with the copper plate and the ceramic, eutectic between the copper plate and the ceramic (Eutectic Melt) This is done by heating for a time sufficient to form this.

본 발명에 의하면 동판에 형성되는 산화층이 접착작용제의 역할을 하여 이것과 금속의 혼합물이 아공정 전영역에 걸쳐 존재하고 최소한 공정의 종단에 있게 되므로, 산화층의 두께는 일정하게 규제되어야 할 필요가 있다.According to the present invention, since the oxide layer formed on the copper plate acts as an adhesive agent and the mixture of this and the metal is present throughout the subprocess and at least at the end of the process, the thickness of the oxide layer needs to be constantly regulated. .

본 발명에서 적당한 산화층의 두께는 동판두께의 1/20정도로 한다.The thickness of the oxide layer suitable in the present invention is about 1/20 of the thickness of the copper plate.

혼합물이 아공정영역에 있는 한, 융해상태에서 단지 액상 공정합금과, 액상공정금속의 2가지 형태만이 존재하게 되고, 여기에 산화층이 접착작용제로서 작용하여 응결 또는 방임상태로 존재하기 때문에, 동판이 갖는 전기저항과 같은 일반적인 전기적 특성은 그대로 남게 된다.As long as the mixture is in the subprocess zone, only two forms of the liquid phase alloy and the liquid phase metal are present in the molten state, and since the oxide layer acts as an adhesive agent and exists in a condensed or neglected state, the copper plate General electrical properties such as the electrical resistance it has remain.

아공정영역에서 행하여 얻어지는 또 다른 이점은 동판이 고체상태로 남게 되는 점이다.Another advantage obtained in the subprocessing area is that the copper plate remains in a solid state.

이하 본 발명을 첨부도면에 따라 실시예로서 상세히 설명한다.Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

[실시예]EXAMPLE

첩착시키기 위한 동판(1)과 세라믹판(2)를 제1도의 도시와 같이 준비한다.The copper plate 1 and the ceramic plate 2 for sticking are prepared as shown in FIG.

여러장의 동판(1)을 상호 겹치지 않게 적당한 용기에 넣고 청정공기 분위기하의 가열로에서 섭씨 225-235도로 가열하여 표면에 산화층(3)을 형성한다.Several copper plates 1 are placed in a suitable container so as not to overlap each other, and are heated at 225-235 degrees Celsius in a heating furnace in a clean air atmosphere to form an oxide layer 3 on the surface.

이 과정에서 동판(1)의 적정 산화여부는 주기적으로 동판(1)의 표면색상 변화를 목측하여 무광택의 짙은 청회색을 띌 때, 산화공정을 중단하고 상온에서 자연냉각시킨다.In this process, the proper oxidation of the copper plate 1 periodically stops the oxidation process and naturally cools it at room temperature when the surface color change of the copper plate 1 is observed to give a matte dark blue-grey color.

동판(1)에서 산화층(3)의 두께는 동판(1)의 두께에 대하여 1/20정도로 하였을 때 가장 양호한 접착상태를 얻을 수 있었다.When the thickness of the oxide layer 3 in the copper plate 1 was about 1/20 to the thickness of the copper plate 1, the best adhesion state could be obtained.

상기 산화공정에 의해 동판(1)은 산화제 2 동으로 산화된 산화층(3)을 보유하게 되고, 이 산화층(3)은 접착작용제의 역할을 하게 된다.By the oxidation process, the copper plate 1 has an oxide layer 3 oxidized with copper oxidant 2, and the oxide layer 3 serves as an adhesive agent.

산화처리된 동판(1)의 어느 한쪽 산화층(3)에 세라믹판(2)를 접촉시킨 채로 산소함유량이 10ppm이하인 질소가스 분위기로 유지되는 전자가열로내로 넣어 섭씨 1200도로 가열 소성한다.The ceramic plate 2 is brought into contact with one of the oxide layers 3 of the oxidized copper plate 1 and placed in an electron heating furnace maintained in a nitrogen gas atmosphere having an oxygen content of 10 ppm or less, followed by heating and baking at 1200 degrees Celsius.

소성공정에 있어서 동판(1)은 제2도의 그래프로 나타낸 프로파일에 따라 상태천이를 행하게 된다.In the firing process, the copper plate 1 performs state transition according to the profile shown in the graph of FIG.

이 천이는 시간의 경과와 계속되는 가열로 인하여 제2도의 왼쪽으로 처음에는 천천히 시작되다가 점차 빠르게 진행되며, 가열이 계속되면 동판(1)의 표면에 함유된 산소성분이 확산되어 원자% 33.3이하에서 산화제 1 동으로 변환된다.This transition starts slowly slowly and gradually increases initially to the left of FIG. 2 due to the passage of time and continuous heating. When heating continues, the oxygen component contained on the surface of the copper plate 1 diffuses and the oxidizing agent is lower than atomic% 33.3. Converted to 1 copper.

이때의 동판(1)의 붉은 색조를 나타낸다.The red hue of the copper plate 1 at this time is shown.

전술한 바와 같이 동판(1)의 표면에 함유된 산소가 확산되면, 표면측 구리의 상대적 분량은 증가하게 된다.As described above, when oxygen contained in the surface of the copper plate 1 diffuses, the relative amount of copper on the surface side increases.

이 상태에서 가열온도를 구리의 공정점이 되는 섭씨 1065도로 낮춰주면 동판(1)의 표면측 화합물이 공정점으로 가기전에 아공정상태로 존재하게 된다. 여기서 산화제 1 동은 함유하고 있는 산소를 기화방출하여 세라믹판(2)와의 접합면에는 대부분 구리만이 남게되고, 접착작용제의 역할을한 산화층(3)은 미량의 상태로 존치된다.In this state, when the heating temperature is lowered to 1065 degrees Celsius, which is the processing point of copper, the surface-side compound of the copper plate 1 is in a subprocess state before going to the processing point. Here, the copper oxide oxidizes and releases oxygen, so that only copper remains mostly at the bonding surface with the ceramic plate 2, and the oxide layer 3 serving as an adhesive agent remains in a trace amount.

산소방출에 따라 동판(1)의 표면에 함유된 산소량이 저하되는 바, 그 함유량이 원자%로 0.2-1.5범위일 때 최적한 접합이 이루어진다.As the amount of oxygen contained in the surface of the copper plate 1 decreases with the release of oxygen, an optimum bonding is achieved when the content is in the range of 0.2-1.5 in atomic%.

아공정상태에서 접착화합물이 응고되면 동판(1)과 세라믹판(2) 사이의 접촉면에 구리와 공정합금만이 남아 접착이 이루어진다.When the adhesive compound is solidified in the sub-process state, only copper and the eutectic alloy remain on the contact surface between the copper plate 1 and the ceramic plate 2 to achieve adhesion.

상기한 소성공정에서 동판(1)과 세라믹(2)를 섭씨 0165-1083도 사이로 가열하고, 물로서 급냉시키면 강도 20000psi를 갖는 접착상태가 얻어진다.In the above firing process, the copper plate 1 and the ceramic 2 are heated to between 0165-1083 degrees Celsius and quenched with water to obtain an adhesive state having a strength of 20000 psi.

상술한 바와 같이 본 발명은 동판의 산화를 가열산화에 의존하는 것이므로, 종래와 같이 화학적 용액을 이용하는 방법에 비추어 작업이 간결함과 동시에, 공해물질을 남기지 않으며, 더우기 작업자에게 아무런 위해를 주지 않는 효과가 있다.As described above, the present invention relies on heating oxidation to oxidize the copper plate. Therefore, in view of the conventional method of using a chemical solution, the operation is simple and leaves no pollutants, and furthermore does not cause any harm to the worker. have.

Claims (3)

금속판에 비금속판을 접합하여 집적회로의 기판을 제조하는 방법에 있어서, 동판을 청정분위기하에서 섭씨 220-230도로 가열 산화하여 표면에 산화층을 형성한 다음, 세라믹판과 접촉시킨 채로, 가열로에 넣고 불활성개스 분위기 하에서 동판의 표면이 용해될 때 까지 가열하고, 다시 섭씨 1065-1083도 범위로 온도를 낮추어 동판과 세라믹사이의 금속화합물이 아공정영역에 존재하도록 한 후, 급냉시킴을 특징으로 하는 집적 회로용 기판의 제조방법.In a method of manufacturing a substrate of an integrated circuit by bonding a non-metal plate to a metal plate, the copper plate is heated and oxidized at 220-230 degrees Celsius under a clean atmosphere to form an oxide layer on the surface, and then placed in a heating furnace while being in contact with a ceramic plate. In an inert gas atmosphere, the surface of the copper plate is heated until it is dissolved, and then the temperature is lowered to 1065-1083 degrees Celsius so that the metal compound between the copper plate and the ceramic is present in the sub-process area and then quenched. Method of manufacturing a circuit board. 제1항에 있어서, 산화층의 두께를 동판 두께의 1/20으로 함을 특징으로 하는 집적회로용 기판의 제조방법.The method of manufacturing an integrated circuit board according to claim 1, wherein the thickness of the oxide layer is 1/20 of a copper plate thickness. 제1항에 있어서 불황성 개스는 산소 함유량 10ppm이하의 질소임을 특징으로 하는 집적회로용 기판의 제조방법.The method of manufacturing an integrated circuit board according to claim 1, wherein the inert gas is nitrogen having an oxygen content of 10 ppm or less.
KR1019880007839A 1988-06-28 1988-06-28 Printed circuit board method for integrated circuit using KR900005304B1 (en)

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