KR900003253B1 - 폴리이미드(polyimide)계(系) 수지막의 선택 엣칭(etching)방법 - Google Patents

폴리이미드(polyimide)계(系) 수지막의 선택 엣칭(etching)방법

Info

Publication number
KR900003253B1
KR900003253B1 KR8205640A KR820005640A KR900003253B1 KR 900003253 B1 KR900003253 B1 KR 900003253B1 KR 8205640 A KR8205640 A KR 8205640A KR 820005640 A KR820005640 A KR 820005640A KR 900003253 B1 KR900003253 B1 KR 900003253B1
Authority
KR
South Korea
Prior art keywords
resin film
polyimide
ketone
etching
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8205640A
Other languages
English (en)
Korean (ko)
Other versions
KR840003145A (ko
Inventor
아쯔시 사이기
다가오 이와야나기
사부로우 노노가기
다가시 나시다
세이기 하라다
Original Assignee
미쓰다 가쓰시게
가부시기가이샤 히다찌세이사꾸쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰다 가쓰시게, 가부시기가이샤 히다찌세이사꾸쇼 filed Critical 미쓰다 가쓰시게
Publication of KR840003145A publication Critical patent/KR840003145A/ko
Application granted granted Critical
Publication of KR900003253B1 publication Critical patent/KR900003253B1/ko
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68Organic materials, e.g. photoresists
    • H10P14/683Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00Etching of wafers, substrates or parts of devices
    • H10P50/20Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/286Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials
    • H10P50/287Dry etching; Plasma etching; Reactive-ion etching of insulating materials of organic materials by chemical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means

Landscapes

  • Treatments Of Macromolecular Shaped Articles (AREA)
  • Weting (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR8205640A 1981-12-21 1982-12-16 폴리이미드(polyimide)계(系) 수지막의 선택 엣칭(etching)방법 Expired KR900003253B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56-205326 1981-12-21
JP56205326A JPS58108229A (ja) 1981-12-21 1981-12-21 ポリイミド系樹脂膜の選択エツチング方法

Publications (2)

Publication Number Publication Date
KR840003145A KR840003145A (ko) 1984-08-13
KR900003253B1 true KR900003253B1 (ko) 1990-05-12

Family

ID=16505075

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8205640A Expired KR900003253B1 (ko) 1981-12-21 1982-12-16 폴리이미드(polyimide)계(系) 수지막의 선택 엣칭(etching)방법

Country Status (5)

Country Link
US (1) US4436583A (https=)
EP (1) EP0082417B1 (https=)
JP (1) JPS58108229A (https=)
KR (1) KR900003253B1 (https=)
DE (1) DE3279554D1 (https=)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4664962A (en) * 1985-04-08 1987-05-12 Additive Technology Corporation Printed circuit laminate, printed circuit board produced therefrom, and printed circuit process therefor
US4908096A (en) * 1988-06-24 1990-03-13 Allied-Signal Inc. Photodefinable interlevel dielectrics
US5242713A (en) * 1988-12-23 1993-09-07 International Business Machines Corporation Method for conditioning an organic polymeric material
US5208066A (en) * 1989-03-18 1993-05-04 Hitachi, Ltd. Process of forming a patterned polyimide film and articles including such a film
US4911786A (en) * 1989-04-26 1990-03-27 International Business Machines Corporation Method of etching polyimides and resulting passivation structure
US5183534A (en) * 1990-03-09 1993-02-02 Amoco Corporation Wet-etch process and composition
US5470693A (en) * 1992-02-18 1995-11-28 International Business Machines Corporation Method of forming patterned polyimide films
KR0126792B1 (ko) * 1994-04-11 1998-04-01 김광호 폴리이미드(Polyimide) 표면 처리방법
US5441815A (en) * 1994-08-29 1995-08-15 Industrial Technology Research Institute Process for producing easily removable polyimide resin film
TW535454B (en) * 1999-10-21 2003-06-01 Semiconductor Energy Lab Electro-optical device
US6713587B2 (en) 2001-03-08 2004-03-30 Ppg Industries Ohio, Inc. Electrodepositable dielectric coating compositions and methods related thereto
US6951707B2 (en) * 2001-03-08 2005-10-04 Ppg Industries Ohio, Inc. Process for creating vias for circuit assemblies
US7000313B2 (en) * 2001-03-08 2006-02-21 Ppg Industries Ohio, Inc. Process for fabricating circuit assemblies using electrodepositable dielectric coating compositions
US20060213685A1 (en) * 2002-06-27 2006-09-28 Wang Alan E Single or multi-layer printed circuit board with improved edge via design
EP1520454B1 (en) * 2002-06-27 2012-01-25 PPG Industries Ohio, Inc. Single or multi-layer printed circuit board with extended breakaway tabs and method of manufacture thereof
US6824959B2 (en) * 2002-06-27 2004-11-30 Ppg Industries Ohio, Inc. Process for creating holes in polymeric substrates
US7745339B2 (en) * 2006-02-24 2010-06-29 Hynix Semiconductor Inc. Method for forming fine pattern of semiconductor device
KR100694412B1 (ko) * 2006-02-24 2007-03-12 주식회사 하이닉스반도체 반도체소자의 미세패턴 형성방법
KR20130012376A (ko) * 2011-07-25 2013-02-04 삼성전자주식회사 반도체 발광소자 제조방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3833436A (en) 1972-09-05 1974-09-03 Buckbee Mears Co Etching of polyimide films
JPS5222071A (en) * 1975-08-13 1977-02-19 Hitachi Ltd Method of selective etching of film of polyamide resin
US4349619A (en) * 1979-09-19 1982-09-14 Japan Synthetic Rubber Co., Ltd. Photoresist composition
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern

Also Published As

Publication number Publication date
EP0082417A3 (en) 1986-03-26
EP0082417A2 (en) 1983-06-29
KR840003145A (ko) 1984-08-13
JPS58108229A (ja) 1983-06-28
JPH0219972B2 (https=) 1990-05-07
US4436583A (en) 1984-03-13
EP0082417B1 (en) 1989-03-15
DE3279554D1 (en) 1989-04-20

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