KR900001881A - 치환된 아미노벤즈알데히드를 함유한 과산화수소 조성물 및 그것으로 인쇄배선판을 제조하는 방법. - Google Patents

치환된 아미노벤즈알데히드를 함유한 과산화수소 조성물 및 그것으로 인쇄배선판을 제조하는 방법. Download PDF

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Publication number
KR900001881A
KR900001881A KR1019890010579A KR890010579A KR900001881A KR 900001881 A KR900001881 A KR 900001881A KR 1019890010579 A KR1019890010579 A KR 1019890010579A KR 890010579 A KR890010579 A KR 890010579A KR 900001881 A KR900001881 A KR 900001881A
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KR
South Korea
Prior art keywords
hydrogen peroxide
composition
wiring board
printed wiring
producing
Prior art date
Application number
KR1019890010579A
Other languages
English (en)
Inventor
이이 하이킬러 커어트
케이 윌리엄즈 로드니
에이 보우넌 브루스
Original Assignee
제임즈 제이 플린
이 아이 듀우판 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제임즈 제이 플린, 이 아이 듀우판 디 네모아 앤드 캄파니 filed Critical 제임즈 제이 플린
Publication of KR900001881A publication Critical patent/KR900001881A/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B15/00—Peroxides; Peroxyhydrates; Peroxyacids or salts thereof; Superoxides; Ozonides
    • C01B15/01—Hydrogen peroxide
    • C01B15/037—Stabilisation by additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Anti-Oxidant Or Stabilizer Compositions (AREA)

Abstract

내용 없음

Description

치환된 아미노벤즈알데히드를 함유한 과산화수소 조성물 및 그것으로 인쇄배선판을 제조하는 방법.
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (6)

  1. 과산화수소 및 하기 일반식을 가지며 과산화수소에 용해될 수 있는 치환된 아미노벤즈알데히드 화합물로 구성되는 안정화된 과산화수소 조성물;
    상기 식에서, R₁및 R₂각각은 C1-12선형 또는 분지쇄 알킬기이거나 C5또는 C6포화 또는 불포화 시클릭기이다.
  2. 제 1 항에 있어서, R₁및 R₂가 각각 C1-C5알킬기인 조성물.
  3. 제 1 항에 있어서, R₁및 R₂가 각각 C1-C3알킬기인 조성물.
  4. 제 1 항에 있어서, 설파닐산 화합물을 함유하는 조성물.
  5. 하기 (a)-(d)로 구성되는 수성 화학 부식제 조성물 : (a) 물, (b) 과산화수소, (c) 무기산, (d) 하기 일반식의 화합물:
    상기 식에서 R₁및 R₂각각은 C1-12선형 또는 분지쇄 알킬기이거나 C5또는 C6포화 또는 불포화 시클릭기이다.
  6. 하기 (a)-(d)로 구성된 조성물을 가지고 있는 금속 부분을 함유한 표면을 부식시키는 것을 포함하는 인쇄 배선판의 제조방법; (a) 물, (b) 과산화수소, (c) 무 기산, (d) 하기 일반식의 화합물:
    상기 식에서 R₁및 R₂각각은 C1-12선형 또는 분지쇄 알킬기이거나 C5또는 C6포화 또는 불포화 시클릭기이다.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019890010579A 1988-07-27 1989-07-26 치환된 아미노벤즈알데히드를 함유한 과산화수소 조성물 및 그것으로 인쇄배선판을 제조하는 방법. KR900001881A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/224,801 US4875973A (en) 1988-07-27 1988-07-27 Hydrogen peroxide compositions containing a substituted aminobenzaldehyde
US224,801 1988-07-27

Publications (1)

Publication Number Publication Date
KR900001881A true KR900001881A (ko) 1990-02-27

Family

ID=22842275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890010579A KR900001881A (ko) 1988-07-27 1989-07-26 치환된 아미노벤즈알데히드를 함유한 과산화수소 조성물 및 그것으로 인쇄배선판을 제조하는 방법.

Country Status (14)

Country Link
US (1) US4875973A (ko)
EP (1) EP0353082A3 (ko)
JP (1) JPH02120211A (ko)
KR (1) KR900001881A (ko)
CN (1) CN1039775A (ko)
AU (1) AU612305B2 (ko)
BR (1) BR8903710A (ko)
DK (1) DK368589A (ko)
FI (1) FI893577A (ko)
IL (1) IL91113A0 (ko)
NO (1) NO893047L (ko)
NZ (1) NZ230078A (ko)
PT (1) PT91280A (ko)
ZA (1) ZA895725B (ko)

Families Citing this family (11)

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FI93031B (fi) * 1993-06-17 1994-10-31 Cellkem Service Oy Glutaarialdehydin käyttö peroksidin hajoamisen estämiseksi uusiomassan ja muun kuitumassan valmistuksessa
GB8922504D0 (en) * 1989-10-05 1989-11-22 Interox Chemicals Ltd Hydrogen peroxide solutions
AU637200B2 (en) * 1990-02-01 1993-05-20 United States Borax & Chemical Corp. Stabilization of aqueous peroxygen solutions
IT1251431B (it) * 1991-10-25 1995-05-09 Costante Fontana Composto ad elevate caratteristiche stabilizzanti particolarmente per perossidi inorganici utilizzati in applicazioni industriali
US5364510A (en) * 1993-02-12 1994-11-15 Sematech, Inc. Scheme for bath chemistry measurement and control for improved semiconductor wet processing
US5439569A (en) * 1993-02-12 1995-08-08 Sematech, Inc. Concentration measurement and control of hydrogen peroxide and acid/base component in a semiconductor bath
US6074960A (en) 1997-08-20 2000-06-13 Micron Technology, Inc. Method and composition for selectively etching against cobalt silicide
US6068879A (en) * 1997-08-26 2000-05-30 Lsi Logic Corporation Use of corrosion inhibiting compounds to inhibit corrosion of metal plugs in chemical-mechanical polishing
CA2378793A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
US6855266B1 (en) 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
JP6564557B2 (ja) 2015-10-20 2019-08-21 ヒルティ アクチエンゲゼルシャフト アルミナセメントをベースとする２成分モルタル系留付け材とその使用

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JPS5120972B1 (ko) * 1971-05-13 1976-06-29
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US3974086A (en) * 1972-05-04 1976-08-10 American Cyanamid Company Stabilization of hydrogen peroxide solutions
GB1435893A (en) * 1972-07-05 1976-05-19 Ici Ltd Treatment of textile materials
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US4027008A (en) * 1975-05-14 1977-05-31 The Gillette Company Hair bleaching composition containing water-soluble amino and quaternary ammonium polymers
GB1565349A (en) * 1975-10-20 1980-04-16 Albright & Wilson Aluminium polishing compositions
US4141850A (en) * 1977-11-08 1979-02-27 Dart Industries Inc. Dissolution of metals
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JPS58197277A (ja) * 1982-05-08 1983-11-16 Mitsubishi Gas Chem Co Inc 金属の化学的溶解処理液
US4437931A (en) * 1983-08-22 1984-03-20 Dart Industries Inc. Dissolution of metals
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US4636282A (en) * 1985-06-20 1987-01-13 Great Lakes Chemical Corporation Method for etching copper and composition useful therein
GB8522046D0 (en) * 1985-09-05 1985-10-09 Interox Chemicals Ltd Stabilisation

Also Published As

Publication number Publication date
AU3900089A (en) 1990-02-01
IL91113A0 (en) 1990-03-19
ZA895725B (en) 1991-03-27
NO893047L (no) 1990-01-29
BR8903710A (pt) 1990-03-20
NZ230078A (en) 1990-08-28
DK368589D0 (da) 1989-07-26
EP0353082A2 (en) 1990-01-31
AU612305B2 (en) 1991-07-04
FI893577A (fi) 1990-01-28
CN1039775A (zh) 1990-02-21
PT91280A (pt) 1990-02-08
NO893047D0 (no) 1989-07-26
DK368589A (da) 1990-01-28
US4875973A (en) 1989-10-24
JPH02120211A (ja) 1990-05-08
EP0353082A3 (en) 1990-04-18
FI893577A0 (fi) 1989-07-26

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