KR900000863B1 - 심부 자외선 석판인쇄 내식막 조성물 및 그의 이용법 - Google Patents
심부 자외선 석판인쇄 내식막 조성물 및 그의 이용법 Download PDFInfo
- Publication number
- KR900000863B1 KR900000863B1 KR1019860002420A KR860002420A KR900000863B1 KR 900000863 B1 KR900000863 B1 KR 900000863B1 KR 1019860002420 A KR1019860002420 A KR 1019860002420A KR 860002420 A KR860002420 A KR 860002420A KR 900000863 B1 KR900000863 B1 KR 900000863B1
- Authority
- KR
- South Korea
- Prior art keywords
- composition
- film
- solubilizer
- cast film
- castable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 0 CC(C(C)C(C1=*)=O)C(*)C1=O Chemical compound CC(C(C)C(C1=*)=O)C(*)C1=O 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/005—Silver halide emulsions; Preparation thereof; Physical treatment thereof; Incorporation of additives therein
- G03C1/492—Photosoluble emulsions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/016—Diazonium salts or compounds
- G03F7/0163—Non ionic diazonium compounds, e.g. diazosulphonates; Precursors thereof, e.g. triazenes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03C—PHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
- G03C1/00—Photosensitive materials
- G03C1/52—Compositions containing diazo compounds as photosensitive substances
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Non-Silver Salt Photosensitive Materials And Non-Silver Salt Photography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/723,273 US4624908A (en) | 1985-04-15 | 1985-04-15 | Deep ultra-violet lithographic resist composition and process of using |
| US723273 | 2000-11-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR860008476A KR860008476A (ko) | 1986-11-15 |
| KR900000863B1 true KR900000863B1 (ko) | 1990-02-17 |
Family
ID=24905568
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019860002420A Expired KR900000863B1 (ko) | 1985-04-15 | 1986-03-31 | 심부 자외선 석판인쇄 내식막 조성물 및 그의 이용법 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US4624908A (https=) |
| EP (1) | EP0198674A3 (https=) |
| JP (1) | JPS61240237A (https=) |
| KR (1) | KR900000863B1 (https=) |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4752551A (en) * | 1986-10-02 | 1988-06-21 | J. T. Baker Inc. | Photosensitive solubilization inhibition agents, and deep ultra-violet lithographic resist compositions |
| US4808512A (en) * | 1986-10-02 | 1989-02-28 | J. T. Baker Inc. | Process of deep ultra-violet imaging lithographic resist compositions |
| EP0271187B1 (en) * | 1986-10-17 | 1995-12-20 | Amdahl Corporation | Split instruction and operand cache management |
| US5158855A (en) * | 1987-09-24 | 1992-10-27 | Hitachi, Ltd. | α-diazoacetoacetates and photosensitive resin compositions containing the same |
| EP0319325A3 (en) * | 1987-12-04 | 1990-12-27 | Wako Pure Chemical Industries, Ltd. | Photosensitive material and process for forming pattern using the same |
| US5169741A (en) * | 1988-10-11 | 1992-12-08 | Matsushita Electric Industrial Co., Ltd. | Method for forming high sensitivity positive patterns employing a material containing a photosensitive compound having a diazo group, an alkaline-soluble polymer, a compound capable of adjusting the pH to 4 or less and a solvent |
| US4959293A (en) * | 1988-10-28 | 1990-09-25 | J. T. Baker, Inc. | Deep UV photoresist with alkyl 2-diazo-1-ones as solubility modification agents |
| DE3837438A1 (de) * | 1988-11-04 | 1990-05-10 | Basf Ag | Strahlungsempfindliches gemisch |
| DE3837513A1 (de) * | 1988-11-04 | 1990-05-10 | Basf Ag | Strahlungsempfindliches gemisch |
| DE3900735A1 (de) * | 1989-01-12 | 1990-07-26 | Hoechst Ag | Neue mehrfunktionelle (alpha)-diazo-(beta)-ketoester, verfahren zu ihrer herstellung und deren verwendung |
| US5039596A (en) * | 1989-06-29 | 1991-08-13 | Hoechst Celanese Corporation | Deep u.v. photoresist process utilizing compositions containing polycyclic cyclopentane 2-diazo-1,3-dione |
| US5182185A (en) * | 1989-06-29 | 1993-01-26 | Hoechst Celanese Corporation | Deep u.v. photoresist compositions containing 4-tert-butylstyrene/maleimide copolymer and polycyclic cyclopentane-2-diazo-1,3-dione and elements utilizing the compositions |
| EP0410256A1 (de) * | 1989-07-26 | 1991-01-30 | Siemens Aktiengesellschaft | Lichtempfindliches Gemisch |
| DE4014648A1 (de) * | 1990-05-08 | 1991-11-14 | Hoechst Ag | Positiv arbeitendes strahlungsempfindiches gemisch und strahlungsempfindliches aufzeichnungsmaterial fuer die belichtung mit duv-strahlung |
| DE4014649A1 (de) * | 1990-05-08 | 1991-11-14 | Hoechst Ag | Neue mehrfunktionelle verbindungen mit (alpha)-diazo-ss-ketoester- und sulfonsaeureester-einheiten, verfahren zu ihrer herstellung und deren verwendung |
| GB9407511D0 (en) * | 1994-04-15 | 1994-06-08 | Smithkline Beecham Corp | Compounds |
| US5876897A (en) * | 1997-03-07 | 1999-03-02 | Clariant Finance (Bvi) Limited | Positive photoresists containing novel photoactive compounds |
| US7022452B2 (en) * | 2002-09-04 | 2006-04-04 | Agilent Technologies, Inc. | Contrast enhanced photolithography |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL247406A (https=) * | 1959-01-17 | |||
| US4207107A (en) * | 1978-08-23 | 1980-06-10 | Rca Corporation | Novel ortho-quinone diazide photoresist sensitizers |
| US4339522A (en) * | 1979-06-18 | 1982-07-13 | International Business Machines Corporation | Ultra-violet lithographic resist composition and process |
| US4284706A (en) * | 1979-12-03 | 1981-08-18 | International Business Machines Corporation | Lithographic resist composition for a lift-off process |
| US4522911A (en) * | 1983-06-28 | 1985-06-11 | International Business Machines Corporation | Deep ultra-violet lithographic resists with diazohomotetramic acid compounds |
-
1985
- 1985-04-15 US US06/723,273 patent/US4624908A/en not_active Expired - Lifetime
-
1986
- 1986-03-31 KR KR1019860002420A patent/KR900000863B1/ko not_active Expired
- 1986-04-10 EP EP86302677A patent/EP0198674A3/en not_active Ceased
- 1986-04-15 JP JP61085220A patent/JPS61240237A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| KR860008476A (ko) | 1986-11-15 |
| EP0198674A3 (en) | 1987-09-02 |
| US4624908A (en) | 1986-11-25 |
| JPS61240237A (ja) | 1986-10-25 |
| EP0198674A2 (en) | 1986-10-22 |
| JPH036495B2 (https=) | 1991-01-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0109 | Patent application |
St.27 status event code: A-0-1-A10-A12-nap-PA0109 |
|
| R17-X000 | Change to representative recorded |
St.27 status event code: A-3-3-R10-R17-oth-X000 |
|
| A201 | Request for examination | ||
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| G160 | Decision to publish patent application | ||
| PG1605 | Publication of application before grant of patent |
St.27 status event code: A-2-2-Q10-Q13-nap-PG1605 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
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| PR1002 | Payment of registration fee |
St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5 |
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| FPAY | Annual fee payment |
Payment date: 19941231 Year of fee payment: 6 |
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| PR1001 | Payment of annual fee |
St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6 |
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| LAPS | Lapse due to unpaid annual fee | ||
| PC1903 | Unpaid annual fee |
St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 19960218 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE |
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| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 19960218 |
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| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |