KR890701495A - 초전도막 형성용 타아켓재의 제조방법 - Google Patents

초전도막 형성용 타아켓재의 제조방법

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Publication number
KR890701495A
KR890701495A KR1019890701368A KR890701368A KR890701495A KR 890701495 A KR890701495 A KR 890701495A KR 1019890701368 A KR1019890701368 A KR 1019890701368A KR 890701368 A KR890701368 A KR 890701368A KR 890701495 A KR890701495 A KR 890701495A
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KR
South Korea
Prior art keywords
target material
manufacturing
film formation
superconducting film
superconducting
Prior art date
Application number
KR1019890701368A
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English (en)
Other versions
KR920003024B1 (ko
Inventor
다꾸오 다께시다
타다시 스기하라
Original Assignee
나가노 다께시
미쓰비시 긴소꾸 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 나가노 다께시, 미쓰비시 긴소꾸 가부시기가이샤 filed Critical 나가노 다께시
Publication of KR890701495A publication Critical patent/KR890701495A/ko
Application granted granted Critical
Publication of KR920003024B1 publication Critical patent/KR920003024B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
    • C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • C04B41/87—Ceramics
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)

Abstract

내용 없음

Description

초전도막 형성용 타아켓재의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음

Claims (2)

  1. Y를 함유하는 희토류 원소와 알칼리류 금속과 Cu와의 산화물을 주제로하는 초전도 세라믹스 분말을 준비하는 공정과, 초전도 세라믹스 분말을10-2torr 이하의 진공분위기 속에서 약 800-900℃ 범위의 제1소정 온도로 가열하고, 약 100-200kg f/cm2의 압력하여 약 1-4시간 유지하는 공정을 보유하는 초전도막 형성용 타아켓재의 제조방법에 있어서, 상기한 제1소정온도로의 승온과정에서 350-700℃ 범위내의 제2소정온도로, 상기한 진공분위기를, 약 0.1용량%의 산소를 함유하는 압력 약 1-100torr의 불활성가스 분위기로 치환하고, 상기한 초전도 세라믹스 분말을 상기한 불활성가스 분위기속에 약 1-10시간 유지하는 것을 특징으로 하는 초전도막 형성용 타아겟재의 제조방법.
  2. 제1항에 있어서, 상기한 불활성가스 분위기는 아르곤가스를 함유하고 있는 것을 특징으로 하는 초전도막 형성용 타아켓재의 제조방법.
    ※ 참고사항：최초출원 내용에 의하여 공개하는 것임.
KR1019890701368A 1987-11-26 1988-11-15 초전도막 형성용 타아겟재의 제조방법 KR920003024B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP62-298320 1987-11-26
JP62298320A JP2595584B2 (ja) 1987-11-26 1987-11-26 残留歪のない超電導膜形成用ターゲット材の製造法
JP???62-?298320? 1987-11-26
PCT/JP1988/001148 WO1989004816A1 (en) 1987-11-26 1988-11-15 Process for preparing target material for superconducting film

Publications (2)

Publication Number Publication Date
KR890701495A true KR890701495A (ko) 1989-12-20
KR920003024B1 KR920003024B1 (ko) 1992-04-13

Family

ID=17858123

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890701368A KR920003024B1 (ko) 1987-11-26 1988-11-15 초전도막 형성용 타아겟재의 제조방법

Country Status (5)

Country Link
EP (1) EP0355165B1 (ko)
JP (1) JP2595584B2 (ko)
KR (1) KR920003024B1 (ko)
DE (1) DE3853426T2 (ko)
WO (1) WO1989004816A1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230618A (ja) * 1988-07-20 1990-02-01 Natl Inst For Res In Inorg Mater 酸化物高温超電導体

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5821880A (ja) * 1981-07-31 1983-02-08 Nippon Telegr & Teleph Corp <Ntt> 酸化物超伝導薄膜の製造方法
SE460966B (sv) * 1987-09-17 1989-12-11 Asea Ab Saett att framstaella ett foeremaal av supraledande material i form av en oxid

Also Published As

Publication number Publication date
EP0355165A1 (en) 1990-02-28
DE3853426T2 (de) 1995-11-09
EP0355165B1 (en) 1995-03-22
WO1989004816A1 (en) 1989-06-01
JP2595584B2 (ja) 1997-04-02
KR920003024B1 (ko) 1992-04-13
DE3853426D1 (de) 1995-04-27
EP0355165A4 (en) 1991-10-23
JPH01141867A (ja) 1989-06-02

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