KR890018232U - WSi₂필름층이 형성된 쌍극성 반도체 소자 - Google Patents

WSi₂필름층이 형성된 쌍극성 반도체 소자

Info

Publication number
KR890018232U
KR890018232U KR2019880001642U KR880001642U KR890018232U KR 890018232 U KR890018232 U KR 890018232U KR 2019880001642 U KR2019880001642 U KR 2019880001642U KR 880001642 U KR880001642 U KR 880001642U KR 890018232 U KR890018232 U KR 890018232U
Authority
KR
South Korea
Prior art keywords
semiconductor device
film layer
bipolar semiconductor
wsi2 film
wsi2
Prior art date
Application number
KR2019880001642U
Other languages
English (en)
Other versions
KR940005927Y1 (ko
Inventor
나관구
Original Assignee
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 금성사 filed Critical 주식회사 금성사
Priority to KR2019880001642U priority Critical patent/KR940005927Y1/ko
Publication of KR890018232U publication Critical patent/KR890018232U/ko
Application granted granted Critical
Publication of KR940005927Y1 publication Critical patent/KR940005927Y1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
KR2019880001642U 1988-02-11 1988-02-11 WSi₂필름층이 형성된 쌍극성 반도체 소자 KR940005927Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019880001642U KR940005927Y1 (ko) 1988-02-11 1988-02-11 WSi₂필름층이 형성된 쌍극성 반도체 소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019880001642U KR940005927Y1 (ko) 1988-02-11 1988-02-11 WSi₂필름층이 형성된 쌍극성 반도체 소자

Publications (2)

Publication Number Publication Date
KR890018232U true KR890018232U (ko) 1989-09-09
KR940005927Y1 KR940005927Y1 (ko) 1994-08-29

Family

ID=19272312

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019880001642U KR940005927Y1 (ko) 1988-02-11 1988-02-11 WSi₂필름층이 형성된 쌍극성 반도체 소자

Country Status (1)

Country Link
KR (1) KR940005927Y1 (ko)

Also Published As

Publication number Publication date
KR940005927Y1 (ko) 1994-08-29

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