KR890013649A - Data output circuit - Google Patents

Data output circuit Download PDF

Info

Publication number
KR890013649A
KR890013649A KR1019890001855A KR890001855A KR890013649A KR 890013649 A KR890013649 A KR 890013649A KR 1019890001855 A KR1019890001855 A KR 1019890001855A KR 890001855 A KR890001855 A KR 890001855A KR 890013649 A KR890013649 A KR 890013649A
Authority
KR
South Korea
Prior art keywords
data output
mos transistor
conductive
divided
output circuit
Prior art date
Application number
KR1019890001855A
Other languages
Korean (ko)
Other versions
KR930000959B1 (en
Inventor
다카유키 하리마
유이치 스즈키
마고토 세가와
시게오 오시마
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR890013649A publication Critical patent/KR890013649A/en
Application granted granted Critical
Publication of KR930000959B1 publication Critical patent/KR930000959B1/en

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F23COMBUSTION APPARATUS; COMBUSTION PROCESSES
    • F23DBURNERS
    • F23D14/00Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Mechanical Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Electronic Switches (AREA)
  • Logic Circuits (AREA)

Abstract

내용 없음.No content.

Description

데이터 출력회로Data output circuit

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명의 1실시예에 관한 데이터 출력회로를 도시해 놓은 회로도,1 is a circuit diagram showing a data output circuit according to an embodiment of the present invention;

제2도(a) 및 제2도(b)는 제1도에 도시된 데이터출력회로의 "0" 데이터출력동작 및 그에 수반되는 전원변동을 도시해 놓은 신호파형도,2 (a) and 2 (b) are signal waveform diagrams showing the " 0 " data output operation of the data output circuit shown in FIG. 1 and accompanying power fluctuations;

제3도는 본 발명의 다른 실시예에 관한 데이터 출력회로를 도시해 놓은 회로도.3 is a circuit diagram showing a data output circuit according to another embodiment of the present invention.

Claims (1)

반도체 집적회로에서의 전원배선(1)과 데이터출력단자(T1)간 및 이 데이터출력단자(T1)와 접지배선(3)간에 각기 대응해서 데이터출력용 제1도전형 MOS 트랜지스터(5) 및 제1도전형 MOS 트랜지스터(5)와는 역도전형인 제2도전형 MOS 트랜지스터(61)(62)가 접속되고, 상기 제1도전형 MOS 트랜지스터(5) 및 제2도전형 MOS 트랜지스터(61)(62)중 적어도 한쪽이 복수의 MOS 트랜지스터로 분할되어 형성됨과 더불어 병렬로 접속되면서, 이렇게 분할된 복수의 MOS 트랜지스터중 적어도 1개의 MOS 트랜지스터가 나머지 MOS 트랜지스터에 비해 챈널폭이 좁게 설정되어, 상기 분할된 복수의 MOS 트랜지스터가 도통될 때 상기 챈널폭이 좁은 MOS 트랜지스터가 가장 빨리 도통개시되도록 제어되는 것을 특징으로 하는 데이터 출력회로.In the semiconductor integrated circuit, the first conductive MOS transistor 5 and the first for data output respectively correspond to between the power supply wiring 1 and the data output terminal T1 and between the data output terminal T1 and the ground wiring 3, respectively. A second conductive MOS transistor 6 1 , 6 2 , which is a reverse conductive type, is connected to the conductive MOS transistor 5, and the first conductive MOS transistor 5 and the second conductive MOS transistor 6 1 are connected. At least one of (6 2 ) is formed by being divided into a plurality of MOS transistors and connected in parallel, so that at least one of the divided MOS transistors has a smaller channel width than the other MOS transistors. And when the plurality of divided MOS transistors are connected, the MOS transistor having a narrow channel width is controlled to start conducting as soon as possible. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019890001855A 1988-02-18 1989-02-17 Data output control circuit KR930000959B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP63035613A JPH01212023A (en) 1988-02-18 1988-02-18 Data output circuit
JP88-35613 1988-02-18
JP63-35613 1988-02-18

Publications (2)

Publication Number Publication Date
KR890013649A true KR890013649A (en) 1989-09-25
KR930000959B1 KR930000959B1 (en) 1993-02-11

Family

ID=12446695

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890001855A KR930000959B1 (en) 1988-02-18 1989-02-17 Data output control circuit

Country Status (2)

Country Link
JP (1) JPH01212023A (en)
KR (1) KR930000959B1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03171813A (en) * 1989-11-29 1991-07-25 Yamaha Corp Output circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63288517A (en) * 1987-05-21 1988-11-25 Matsushita Electronics Corp Complementary mos transistor device

Also Published As

Publication number Publication date
JPH01212023A (en) 1989-08-25
KR930000959B1 (en) 1993-02-11
JPH054851B2 (en) 1993-01-21

Similar Documents

Publication Publication Date Title
KR900013380A (en) Voltage control circuit
KR860003664A (en) Chip-on-Chip Semiconductor Device
KR880012008A (en) Power switching circuit
KR870011696A (en) Power supply voltage drop circuit
KR890012398A (en) Input protection circuit of MOS semiconductor device
KR910010505A (en) Semiconductor integrated circuits, semiconductor memories, and microprocessors
KR860000719A (en) Complementary Bi-MIS Gate Circuit
KR890011209A (en) Due slope waveform generator
KR910008863A (en) Semiconductor integrated circuit
KR890009000A (en) Digital integrated circuits
KR910005448A (en) Semiconductor integrated circuit
KR900011152A (en) Voltage drop detection and reset circuit reset circuit
KR910003801A (en) Semiconductor integrated circuit device and manufacturing method thereof
KR890007430A (en) Output circuit of semiconductor device
KR890013769A (en) Medium Potential Generation Circuit
DE69414310T2 (en) Integrated semiconductor circuit with test circuit
KR970024162A (en) A SEMICONDUCTOR DEVICE HAVING PULL-UP OR PULL-DOWN RESISTANCE
KR930005369A (en) Level conversion circuit
KR910020896A (en) Semiconductor integrated circuit
KR890013649A (en) Data output circuit
KR890007503A (en) Semiconductor integrated circuit
KR900019214A (en) Semiconductor device
KR910010866A (en) Bi-CMOS Circuit
KR900019367A (en) Pulsed Signal Generator Circuit
KR890004495A (en) Reset signal generation circuit

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20030130

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee