KR890011075A - 글레이즈 저항체 및 이것을 사용한 혼성집적회로장치 - Google Patents
글레이즈 저항체 및 이것을 사용한 혼성집적회로장치 Download PDFInfo
- Publication number
- KR890011075A KR890011075A KR1019880016511A KR880016511A KR890011075A KR 890011075 A KR890011075 A KR 890011075A KR 1019880016511 A KR1019880016511 A KR 1019880016511A KR 880016511 A KR880016511 A KR 880016511A KR 890011075 A KR890011075 A KR 890011075A
- Authority
- KR
- South Korea
- Prior art keywords
- silicide
- boride
- metal
- glaze
- resistor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C1/00—Details
- H01C1/02—Housing; Enclosing; Embedding; Filling the housing or enclosure
- H01C1/028—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
- H01C1/03—Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath with powdered insulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/06566—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of borides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/0656—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/003—Thick film resistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 글레이즈 저항체를 구성한 혼성집적회로장치의 실시예의 단면도.
제2도는 마찬가지로 칩저항기의 실시예의 단면도.
제3도는 마찬가지로 저항네트워어크의 실시예의 사시도.
* 도면의 주요부분에 대한 부호의 설명
1,11,21 : 저항체 2,12,22 : 세라믹기판
3,13,33 : 전극 4 : 반도체소자
5 : 칩부품 6,16 : 오우버코우트
14 : Ni 도금층 15 : Sn-Pb 도금층
24 : 리이드단자 25 : 코우팅재
Claims (8)
- 금속규화물과 금속붕화물로 이루어진 도전성분의 4.0~70.0 중량5%, 유리가 30.0~96.0중량%로 이루어진 글레이즈 저항재료로서, 금속 붕화물이 차지하는 비율이 1.0~68.0중량%인 것을 특징으로 하는 글레이즈 저항체.
- 제1항에 있어서, 상기 유리는, 비산화분위기에서 소성할때에 금속화되기 어려운 금속산화물로 이루어진 것이며, 연화점이 500~800℃의 범위인 것이 글레이즈 저항체.
- 제1항에 있어서, 금속규화물은, 규화탄탈, 규화텅스텐, 규화몰리브덴, 규화니오브, 규화티탄, 규화크롬, 규화지르코늄, 규화바나듐중의 적어도 1종 이상이고, 규화탄탈, 규화텅스텐, 규화몰리브덴, 규화니오브, 규화티탄, 규화크롬, 규화지르콤늄, 규화바나듐은 각각, TaSi2, WSi2, MoSi2, NbSi2TiSi2, CrSi2, ZrSi2, VSi2가 90.0중량% 이상인 글레이즈 저항체.
- 제1항에 있어서, 금속붕화물은 부화탄탈, 붕화니오브, 붕화바나듐, 붕화텅스텐, 붕화몰리브덴, 붕화크롬중의 적어도 1종인 클레이즈 저항체.
- 제1항에 있어서, 금속붕화물은 붕화티탄, 붕화지르코늄의 어느 하나, 또는 양자의 혼합물이고, 붕화티탄, 붕화지르코늄은 각각 TiB2, ZrB2가 90.0주양% 이상인 글레이즈 저항체.
- 제1항에 있어서, Ta2O5, Nb2O5, V2O5, MoO3, WO3, ZrO2, TiO2, Cr2O3및 이들의 저차(低次)산화물중, 적어도 1종을 첨가한 글레이즈 저항체.
- 제1항에 있어서, Si, Si3N4, SiC, AlN, BN, SiO2중 적어도 1종을 첨가한 글레이즈 저항체.
- 기판상에 상기 청구의 범위 제1항 기재의 글레이즈 저항체를 형성하여 구성한 혼선집적회로장치.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31589987 | 1987-12-14 | ||
JP315899 | 1987-12-14 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890011075A true KR890011075A (ko) | 1989-08-12 |
KR920001161B1 KR920001161B1 (ko) | 1992-02-06 |
Family
ID=18070945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880016511A KR920001161B1 (ko) | 1987-12-14 | 1988-12-12 | 글레이즈 저항체 및 이것을 사용한 혼성집적회로장치 |
Country Status (4)
Country | Link |
---|---|
US (1) | US4985377A (ko) |
EP (1) | EP0320824B1 (ko) |
KR (1) | KR920001161B1 (ko) |
DE (1) | DE3888645T2 (ko) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5470506A (en) * | 1988-12-31 | 1995-11-28 | Yamamura Glass Co., Ltd. | Heat-generating composition |
JP2674523B2 (ja) * | 1993-12-16 | 1997-11-12 | 日本電気株式会社 | セラミック配線基板とその製造方法 |
US5637261A (en) * | 1994-11-07 | 1997-06-10 | The Curators Of The University Of Missouri | Aluminum nitride-compatible thick-film binder glass and thick-film paste composition |
US6723420B2 (en) | 2001-04-09 | 2004-04-20 | Morgan Chemical Products, Inc. | Thick film paste systems for circuits on diamond substrates |
US7745516B2 (en) * | 2005-10-12 | 2010-06-29 | E. I. Du Pont De Nemours And Company | Composition of polyimide and sterically-hindered hydrophobic epoxy |
US20070290379A1 (en) * | 2006-06-15 | 2007-12-20 | Dueber Thomas E | Hydrophobic compositions for electronic applications |
US7951459B2 (en) * | 2006-11-21 | 2011-05-31 | United Technologies Corporation | Oxidation resistant coatings, processes for coating articles, and their coated articles |
US20090111948A1 (en) * | 2007-10-25 | 2009-04-30 | Thomas Eugene Dueber | Compositions comprising polyimide and hydrophobic epoxy and phenolic resins, and methods relating thereto |
FR2946043B1 (fr) * | 2009-05-27 | 2011-06-24 | Centre Nat Rech Scient | Composition vitreuse autocicatrisante, procede de preparation et utilisations. |
US8980434B2 (en) * | 2011-12-16 | 2015-03-17 | Wisconsin Alumni Research Foundation | Mo—Si—B—based coatings for ceramic base substrates |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2128568A1 (en) * | 1971-06-09 | 1972-12-14 | Licentia Gmbh | Resistive glaze - comprising borides and silicides of molybdenum, tungsten or chromium |
US4044173A (en) * | 1972-05-03 | 1977-08-23 | E. R. A. Patents Limited | Electrical resistance compositions |
US4039997A (en) * | 1973-10-25 | 1977-08-02 | Trw Inc. | Resistance material and resistor made therefrom |
US4119573A (en) * | 1976-11-10 | 1978-10-10 | Matsushita Electric Industrial Co., Ltd. | Glaze resistor composition and method of making the same |
JPS60229B2 (ja) * | 1978-01-09 | 1985-01-07 | キヤノン株式会社 | サ−マルヘツド |
US4513062A (en) * | 1978-06-17 | 1985-04-23 | Ngk Insulators, Ltd. | Ceramic body having a metallized layer |
JPS5923442B2 (ja) * | 1978-11-25 | 1984-06-02 | 松下電器産業株式会社 | 抵抗組成物 |
JPS5773959A (en) * | 1980-10-27 | 1982-05-08 | Hitachi Ltd | Manufacture of thick film hybrid integrated circuit board |
US4695504A (en) * | 1985-06-21 | 1987-09-22 | Matsushita Electric Industrial Co., Ltd. | Thick film resistor composition |
-
1988
- 1988-12-07 US US07/281,025 patent/US4985377A/en not_active Expired - Lifetime
- 1988-12-09 EP EP88120659A patent/EP0320824B1/en not_active Expired - Lifetime
- 1988-12-09 DE DE3888645T patent/DE3888645T2/de not_active Expired - Fee Related
- 1988-12-12 KR KR1019880016511A patent/KR920001161B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US4985377A (en) | 1991-01-15 |
KR920001161B1 (ko) | 1992-02-06 |
EP0320824B1 (en) | 1994-03-23 |
EP0320824A2 (en) | 1989-06-21 |
DE3888645D1 (de) | 1994-04-28 |
DE3888645T2 (de) | 1994-09-29 |
EP0320824A3 (en) | 1990-11-28 |
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E701 | Decision to grant or registration of patent right | ||
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FPAY | Annual fee payment |
Payment date: 20050121 Year of fee payment: 14 |
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