KR890011075A - 글레이즈 저항체 및 이것을 사용한 혼성집적회로장치 - Google Patents

글레이즈 저항체 및 이것을 사용한 혼성집적회로장치 Download PDF

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Publication number
KR890011075A
KR890011075A KR1019880016511A KR880016511A KR890011075A KR 890011075 A KR890011075 A KR 890011075A KR 1019880016511 A KR1019880016511 A KR 1019880016511A KR 880016511 A KR880016511 A KR 880016511A KR 890011075 A KR890011075 A KR 890011075A
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KR
South Korea
Prior art keywords
silicide
boride
metal
glaze
resistor
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KR1019880016511A
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English (en)
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KR920001161B1 (ko
Inventor
다께시 이세끼
오사무 마끼노
미쯔오 이오까
히로도시 와다나베
Original Assignee
다니이 아끼오
마쯔시다덴기산교 가부시기가이샤
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Publication of KR890011075A publication Critical patent/KR890011075A/ko
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Publication of KR920001161B1 publication Critical patent/KR920001161B1/ko

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C1/00Details
    • H01C1/02Housing; Enclosing; Embedding; Filling the housing or enclosure
    • H01C1/028Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath
    • H01C1/03Housing; Enclosing; Embedding; Filling the housing or enclosure the resistive element being embedded in insulation with outer enclosing sheath with powdered insulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06566Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of borides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C17/00Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/0656Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/003Thick film resistors

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Non-Adjustable Resistors (AREA)

Abstract

내용 없음

Description

글레이즈 저항체 및 이것을 사용한 혼성집적회로장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 글레이즈 저항체를 구성한 혼성집적회로장치의 실시예의 단면도.
제2도는 마찬가지로 칩저항기의 실시예의 단면도.
제3도는 마찬가지로 저항네트워어크의 실시예의 사시도.
* 도면의 주요부분에 대한 부호의 설명
1,11,21 : 저항체 2,12,22 : 세라믹기판
3,13,33 : 전극 4 : 반도체소자
5 : 칩부품 6,16 : 오우버코우트
14 : Ni 도금층 15 : Sn-Pb 도금층
24 : 리이드단자 25 : 코우팅재

Claims (8)

  1. 금속규화물과 금속붕화물로 이루어진 도전성분의 4.0~70.0 중량5%, 유리가 30.0~96.0중량%로 이루어진 글레이즈 저항재료로서, 금속 붕화물이 차지하는 비율이 1.0~68.0중량%인 것을 특징으로 하는 글레이즈 저항체.
  2. 제1항에 있어서, 상기 유리는, 비산화분위기에서 소성할때에 금속화되기 어려운 금속산화물로 이루어진 것이며, 연화점이 500~800℃의 범위인 것이 글레이즈 저항체.
  3. 제1항에 있어서, 금속규화물은, 규화탄탈, 규화텅스텐, 규화몰리브덴, 규화니오브, 규화티탄, 규화크롬, 규화지르코늄, 규화바나듐중의 적어도 1종 이상이고, 규화탄탈, 규화텅스텐, 규화몰리브덴, 규화니오브, 규화티탄, 규화크롬, 규화지르콤늄, 규화바나듐은 각각, TaSi2, WSi2, MoSi2, NbSi2TiSi2, CrSi2, ZrSi2, VSi2가 90.0중량% 이상인 글레이즈 저항체.
  4. 제1항에 있어서, 금속붕화물은 부화탄탈, 붕화니오브, 붕화바나듐, 붕화텅스텐, 붕화몰리브덴, 붕화크롬중의 적어도 1종인 클레이즈 저항체.
  5. 제1항에 있어서, 금속붕화물은 붕화티탄, 붕화지르코늄의 어느 하나, 또는 양자의 혼합물이고, 붕화티탄, 붕화지르코늄은 각각 TiB2, ZrB2가 90.0주양% 이상인 글레이즈 저항체.
  6. 제1항에 있어서, Ta2O5, Nb2O5, V2O5, MoO3, WO3, ZrO2, TiO2, Cr2O3및 이들의 저차(低次)산화물중, 적어도 1종을 첨가한 글레이즈 저항체.
  7. 제1항에 있어서, Si, Si3N4, SiC, AlN, BN, SiO2중 적어도 1종을 첨가한 글레이즈 저항체.
  8. 기판상에 상기 청구의 범위 제1항 기재의 글레이즈 저항체를 형성하여 구성한 혼선집적회로장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880016511A 1987-12-14 1988-12-12 글레이즈 저항체 및 이것을 사용한 혼성집적회로장치 KR920001161B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31589987 1987-12-14
JP315899 1987-12-14

Publications (2)

Publication Number Publication Date
KR890011075A true KR890011075A (ko) 1989-08-12
KR920001161B1 KR920001161B1 (ko) 1992-02-06

Family

ID=18070945

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880016511A KR920001161B1 (ko) 1987-12-14 1988-12-12 글레이즈 저항체 및 이것을 사용한 혼성집적회로장치

Country Status (4)

Country Link
US (1) US4985377A (ko)
EP (1) EP0320824B1 (ko)
KR (1) KR920001161B1 (ko)
DE (1) DE3888645T2 (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5470506A (en) * 1988-12-31 1995-11-28 Yamamura Glass Co., Ltd. Heat-generating composition
JP2674523B2 (ja) * 1993-12-16 1997-11-12 日本電気株式会社 セラミック配線基板とその製造方法
US5637261A (en) * 1994-11-07 1997-06-10 The Curators Of The University Of Missouri Aluminum nitride-compatible thick-film binder glass and thick-film paste composition
US6723420B2 (en) 2001-04-09 2004-04-20 Morgan Chemical Products, Inc. Thick film paste systems for circuits on diamond substrates
US7745516B2 (en) * 2005-10-12 2010-06-29 E. I. Du Pont De Nemours And Company Composition of polyimide and sterically-hindered hydrophobic epoxy
US20070290379A1 (en) * 2006-06-15 2007-12-20 Dueber Thomas E Hydrophobic compositions for electronic applications
US7951459B2 (en) * 2006-11-21 2011-05-31 United Technologies Corporation Oxidation resistant coatings, processes for coating articles, and their coated articles
US20090111948A1 (en) * 2007-10-25 2009-04-30 Thomas Eugene Dueber Compositions comprising polyimide and hydrophobic epoxy and phenolic resins, and methods relating thereto
FR2946043B1 (fr) * 2009-05-27 2011-06-24 Centre Nat Rech Scient Composition vitreuse autocicatrisante, procede de preparation et utilisations.
US8980434B2 (en) * 2011-12-16 2015-03-17 Wisconsin Alumni Research Foundation Mo—Si—B—based coatings for ceramic base substrates

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2128568A1 (en) * 1971-06-09 1972-12-14 Licentia Gmbh Resistive glaze - comprising borides and silicides of molybdenum, tungsten or chromium
US4044173A (en) * 1972-05-03 1977-08-23 E. R. A. Patents Limited Electrical resistance compositions
US4039997A (en) * 1973-10-25 1977-08-02 Trw Inc. Resistance material and resistor made therefrom
US4119573A (en) * 1976-11-10 1978-10-10 Matsushita Electric Industrial Co., Ltd. Glaze resistor composition and method of making the same
JPS60229B2 (ja) * 1978-01-09 1985-01-07 キヤノン株式会社 サ−マルヘツド
US4513062A (en) * 1978-06-17 1985-04-23 Ngk Insulators, Ltd. Ceramic body having a metallized layer
JPS5923442B2 (ja) * 1978-11-25 1984-06-02 松下電器産業株式会社 抵抗組成物
JPS5773959A (en) * 1980-10-27 1982-05-08 Hitachi Ltd Manufacture of thick film hybrid integrated circuit board
US4695504A (en) * 1985-06-21 1987-09-22 Matsushita Electric Industrial Co., Ltd. Thick film resistor composition

Also Published As

Publication number Publication date
US4985377A (en) 1991-01-15
KR920001161B1 (ko) 1992-02-06
EP0320824B1 (en) 1994-03-23
EP0320824A2 (en) 1989-06-21
DE3888645D1 (de) 1994-04-28
DE3888645T2 (de) 1994-09-29
EP0320824A3 (en) 1990-11-28

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