KR890008354A - 고순도 도우핑 합금 - Google Patents

고순도 도우핑 합금 Download PDF

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Publication number
KR890008354A
KR890008354A KR1019880015662A KR880015662A KR890008354A KR 890008354 A KR890008354 A KR 890008354A KR 1019880015662 A KR1019880015662 A KR 1019880015662A KR 880015662 A KR880015662 A KR 880015662A KR 890008354 A KR890008354 A KR 890008354A
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South Korea
Prior art keywords
silicon
alloy
high purity
carrier material
layer
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KR1019880015662A
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English (en)
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KR970007653B1 (ko
Inventor
홀 알렌 로버트
이브라힘 자멜
Original Assignee
필립 맥키니 피펜저
에틸 코오포레이숀
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Publication of KR890008354A publication Critical patent/KR890008354A/ko
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/003—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic followed by coating of the granules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/16—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic by suspending the powder material in a gas, e.g. in fluidised beds or as a falling curtain
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12181—Composite powder [e.g., coated, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

고순도 도우핑 합금
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 입자를 도시한다.
제2도는 본 발명의 제품을 제조하기 위한 장치의 흐름도.

Claims (8)

  1. (ⅰ) 고순도 실리콘의 중앙부와 (ⅱ) 상기 중앙부위와 층을 가지고, 상기층은 p 또는 n 운반물질을 갖는 것을 특징으로 하는 구슬형상 미립자의 실리콘 합성물.
  2. 제1항에 있어서, 상기층은 소량의 상기 p 또는 n운반물질을 가지는 대부분의 합금 또는 실리콘인 것을 특징으로 하는 구슬형성 미립자의 실리콘 합성물.
  3. 제1항에 있어서, 상기 성분의 구슬형상 입자는 비교적 크기가 균일하고 큰입자를 분쇄하여 얻어진 형태의 표면경계와, 평면이 거의 없는 것을 특징으로 하는 구슬형상 미립자의 실리콘 합성물.
  4. (a) 순수실리콘의 내부핵과, (b) B, P, As 또는 Sb중에서 선택된 p 또는 n운반물질과 합금된 고순도 실리콘으로 구성된 상기 핵 둘레의 비교적 얇은 층으로 구성되고, 도우핑된 단결정 실리콘을 제조하기 위한 배치 또는 연속 초크랄스키 공정에 적합하고, 좁은 크기 분포의 구형입자로 이루어진 것을 특징으로 하는 자유유동 미립자의 형태의 도우판트 합금합성물.
  5. (ⅰ) p 또는 n운반물질을 갖는 실리콘 합금의 얇은 층 사이에 (ⅱ) 싸여있는 고순도 실리콘의 중앙부분과 (ⅲ) 순수실리콘의 외부피복을 가지며, 상기 외부피복을 상기 실리콘 합금의 얇은 층보다 얇으며, 도우프된 단결정 실리콘을 제조하기 위한 배치 또는 연속초크랄스키공정에 필요한 오우판트합금으로서 사용하기에 적합한 것을 특징으로 하는 구슬형상의 실리콘합성물.
  6. 붕소농도가 10 내지 3000ppma인 것을 특징으로 하는 붕소와 실리콘의 합금.
  7. 인농도가 10 내지 3000ppma인것을 특징으로 하는 인과 실리콘과 합금.
  8. 자유유동하는 미립자 형태의 실리콘 합성물을 제조하기 위한 유동층 공정에서, 상기 동정은 실란과 수소화물의 분해온도 이상의 온도에서 유지되는 구형입자의 유동층을 통과하는 p또는 n운반물질이 이원수소화물과 실란의 혼합으로 이루어진 분해개스의 기류를 통과하는 것으로 이루어지며, 이로 인하여 실리콘과 상기 운반물질의 합금이 고순도 실리콘의 상기 입자위에 용착되는 것을 특징으로 하는 유동층 공정.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880015662A 1987-11-27 1988-11-26 고순도 도우핑 합금 KR970007653B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US126,203 1987-11-27
US07/126,203 US4789596A (en) 1987-11-27 1987-11-27 Dopant coated bead-like silicon particles

Publications (2)

Publication Number Publication Date
KR890008354A true KR890008354A (ko) 1989-07-10
KR970007653B1 KR970007653B1 (ko) 1997-05-15

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Application Number Title Priority Date Filing Date
KR1019880015662A KR970007653B1 (ko) 1987-11-27 1988-11-26 고순도 도우핑 합금

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Country Link
US (1) US4789596A (ko)
EP (1) EP0318008B1 (ko)
JP (1) JP2779188B2 (ko)
KR (1) KR970007653B1 (ko)
CA (1) CA1309308C (ko)
DE (1) DE3850357T2 (ko)

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US5810934A (en) 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
GB2409924A (en) * 2004-01-06 2005-07-13 Psimedica Ltd Method of making a silicon-phosphorus composite
US20060105105A1 (en) 2004-11-12 2006-05-18 Memc Electronic Materials, Inc. High purity granular silicon and method of manufacturing the same
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
CN103787336B (zh) 2008-09-16 2016-09-14 储晞 生产高纯颗粒硅的方法
FR2962849B1 (fr) * 2010-07-16 2014-03-28 Apollon Solar Procede de dopage d'un materiau semi-conducteur
WO2013102170A1 (en) 2011-12-30 2013-07-04 Saint-Gobain Ceramics & Plastics, Inc. Composite shaped abrasive particles and method of forming same
US9771507B2 (en) 2014-01-31 2017-09-26 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle including dopant material and method of forming same

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Also Published As

Publication number Publication date
DE3850357D1 (de) 1994-07-28
EP0318008A2 (en) 1989-05-31
EP0318008B1 (en) 1994-06-22
KR970007653B1 (ko) 1997-05-15
EP0318008A3 (en) 1989-09-20
DE3850357T2 (de) 1994-10-13
JPH029705A (ja) 1990-01-12
CA1309308C (en) 1992-10-27
JP2779188B2 (ja) 1998-07-23
US4789596A (en) 1988-12-06

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