DE3850357T2 - Hochreine Legierungen für Dotierungszwecke. - Google Patents

Hochreine Legierungen für Dotierungszwecke.

Info

Publication number
DE3850357T2
DE3850357T2 DE3850357T DE3850357T DE3850357T2 DE 3850357 T2 DE3850357 T2 DE 3850357T2 DE 3850357 T DE3850357 T DE 3850357T DE 3850357 T DE3850357 T DE 3850357T DE 3850357 T2 DE3850357 T2 DE 3850357T2
Authority
DE
Germany
Prior art keywords
purity alloys
doping purposes
doping
purposes
alloys
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3850357T
Other languages
English (en)
Other versions
DE3850357D1 (de
Inventor
Robert Hall Allen
Jameel Ibrahim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ethyl Corp
Original Assignee
Ethyl Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ethyl Corp filed Critical Ethyl Corp
Application granted granted Critical
Publication of DE3850357D1 publication Critical patent/DE3850357D1/de
Publication of DE3850357T2 publication Critical patent/DE3850357T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/003—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic followed by coating of the granules
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/16—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic by suspending the powder material in a gas, e.g. in fluidised beds or as a falling curtain
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12181—Composite powder [e.g., coated, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
    • Y10T428/2991—Coated
    • Y10T428/2993—Silicic or refractory material containing [e.g., tungsten oxide, glass, cement, etc.]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE3850357T 1987-11-27 1988-11-24 Hochreine Legierungen für Dotierungszwecke. Expired - Lifetime DE3850357T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/126,203 US4789596A (en) 1987-11-27 1987-11-27 Dopant coated bead-like silicon particles

Publications (2)

Publication Number Publication Date
DE3850357D1 DE3850357D1 (de) 1994-07-28
DE3850357T2 true DE3850357T2 (de) 1994-10-13

Family

ID=22423550

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3850357T Expired - Lifetime DE3850357T2 (de) 1987-11-27 1988-11-24 Hochreine Legierungen für Dotierungszwecke.

Country Status (6)

Country Link
US (1) US4789596A (de)
EP (1) EP0318008B1 (de)
JP (1) JP2779188B2 (de)
KR (1) KR970007653B1 (de)
CA (1) CA1309308C (de)
DE (1) DE3850357T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4851297A (en) * 1987-11-27 1989-07-25 Ethyl Corporation Dopant coated bead-like silicon particles
US5223452A (en) * 1989-12-21 1993-06-29 Knepprath Vernon E Method and apparatus for doping silicon spheres
US5403439A (en) * 1993-12-01 1995-04-04 Texas Instruments Incorporated Method of producing same-sized particles
US5798137A (en) 1995-06-07 1998-08-25 Advanced Silicon Materials, Inc. Method for silicon deposition
GB2409924A (en) * 2004-01-06 2005-07-13 Psimedica Ltd Method of making a silicon-phosphorus composite
US20060105105A1 (en) 2004-11-12 2006-05-18 Memc Electronic Materials, Inc. High purity granular silicon and method of manufacturing the same
NO322246B1 (no) * 2004-12-27 2006-09-04 Elkem Solar As Fremgangsmate for fremstilling av rettet storknede silisiumingots
CN103058194B (zh) 2008-09-16 2015-02-25 储晞 生产高纯颗粒硅的反应器
FR2962849B1 (fr) * 2010-07-16 2014-03-28 Apollon Solar Procede de dopage d'un materiau semi-conducteur
JP5903502B2 (ja) * 2011-12-30 2016-04-13 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド 成形研磨粒子を備える粒子材料
US9771507B2 (en) 2014-01-31 2017-09-26 Saint-Gobain Ceramics & Plastics, Inc. Shaped abrasive particle including dopant material and method of forming same

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3012861A (en) * 1960-01-15 1961-12-12 Du Pont Production of silicon
DE1544281C3 (de) * 1966-03-04 1975-04-03 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Dotieren von Silicium- Halbleitermaterial
DE1644009B2 (de) * 1966-06-13 1975-10-09 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit homogener Antimondotierung
DE1544292C3 (de) * 1966-06-13 1976-01-08 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung
US3669757A (en) * 1970-03-23 1972-06-13 Ibm Method of making and using diced single crystal impurity source
US3708728A (en) * 1971-06-10 1973-01-02 Int Standard Electric Corp Electrolytic capacitor electrode comprising semiconductor core with film-forming metal coating
US3998659A (en) * 1974-01-28 1976-12-21 Texas Instruments Incorporated Solar cell with semiconductor particles and method of fabrication
US4021323A (en) * 1975-07-28 1977-05-03 Texas Instruments Incorporated Solar energy conversion
DE2751388A1 (de) * 1977-11-17 1979-05-23 Siemens Ag Verfahren zum gezielten einbringen von dotierungsstoffen mit einem verteilungskoeffizienten k klein gegen 1 beim tiegelfreien zonenschmelzen
US4249988A (en) * 1978-03-15 1981-02-10 Western Electric Company, Inc. Growing crystals from a melt by controlling additions of material thereto
FR2479276A1 (fr) * 1980-03-31 1981-10-02 Radiotechnique Compelec Procede de croissance monocristalline d'un lingot d'un materiau semiconducteur, notamment de silicium, et appareillage de mise en oeuvre dudit procede
US4381233A (en) * 1980-05-19 1983-04-26 Asahi Kasei Kogyo Kabushiki Kaisha Photoelectrolyzer
DD153705A1 (de) * 1980-10-16 1982-01-27 Heidi Haubold Verfahren zur dotierung von halbleiterkristallen
US4425408A (en) * 1981-08-07 1984-01-10 Texas Instruments Incorporated Production of single crystal semiconductors
WO1986006764A1 (en) * 1985-05-17 1986-11-20 J.C. Schumacher Company Continuously pulled single crystal silicon ingots

Also Published As

Publication number Publication date
EP0318008A3 (en) 1989-09-20
EP0318008A2 (de) 1989-05-31
KR970007653B1 (ko) 1997-05-15
KR890008354A (ko) 1989-07-10
JPH029705A (ja) 1990-01-12
CA1309308C (en) 1992-10-27
EP0318008B1 (de) 1994-06-22
JP2779188B2 (ja) 1998-07-23
US4789596A (en) 1988-12-06
DE3850357D1 (de) 1994-07-28

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Legal Events

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