KR890004466B1 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
KR890004466B1
KR890004466B1 KR8508441A KR850008441A KR890004466B1 KR 890004466 B1 KR890004466 B1 KR 890004466B1 KR 8508441 A KR8508441 A KR 8508441A KR 850008441 A KR850008441 A KR 850008441A KR 890004466 B1 KR890004466 B1 KR 890004466B1
Authority
KR
South Korea
Prior art keywords
layer
base
emitter
conductive
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
KR8508441A
Other languages
English (en)
Korean (ko)
Inventor
Naoki Yokohama
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of KR890004466B1 publication Critical patent/KR890004466B1/ko
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
KR8508441A 1984-11-19 1985-11-12 Semiconductor device Expired KR890004466B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59242413A JPS61121369A (ja) 1984-11-19 1984-11-19 半導体装置

Publications (1)

Publication Number Publication Date
KR890004466B1 true KR890004466B1 (en) 1989-11-04

Family

ID=17088755

Family Applications (1)

Application Number Title Priority Date Filing Date
KR8508441A Expired KR890004466B1 (en) 1984-11-19 1985-11-12 Semiconductor device

Country Status (5)

Country Link
US (1) US4903090A (enExample)
EP (1) EP0183474B1 (enExample)
JP (1) JPS61121369A (enExample)
KR (1) KR890004466B1 (enExample)
DE (1) DE3582653D1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US5016074A (en) * 1987-10-20 1991-05-14 Bell Communications Research, Inc. Epitaxial intermetallic contact for compound semiconductors
US5155561A (en) * 1988-01-05 1992-10-13 Massachusetts Institute Of Technology Permeable base transistor having an electrode configuration for heat dissipation
DE4025269A1 (de) * 1990-02-07 1991-08-08 Forschungszentrum Juelich Gmbh Elektronisches bauelement und verfahren zu dessen herstellung
US5047821A (en) * 1990-03-15 1991-09-10 Intevac, Inc. Transferred electron III-V semiconductor photocathode
JPH03290975A (ja) * 1990-04-09 1991-12-20 Fujitsu Ltd 縦型半導体装置
TW372363B (en) * 1996-04-04 1999-10-21 Mitsubishi Electric Corp Manufacturing method for static semiconductor memory apparatus and semiconductor apparatus and bipolar transistor
US5945701A (en) * 1997-12-19 1999-08-31 Northrop Grumman Corporation Static induction transistor
US6919592B2 (en) * 2001-07-25 2005-07-19 Nantero, Inc. Electromechanical memory array using nanotube ribbons and method for making same
US6911682B2 (en) 2001-12-28 2005-06-28 Nantero, Inc. Electromechanical three-trace junction devices
US7566478B2 (en) * 2001-07-25 2009-07-28 Nantero, Inc. Methods of making carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6643165B2 (en) * 2001-07-25 2003-11-04 Nantero, Inc. Electromechanical memory having cell selection circuitry constructed with nanotube technology
US6924538B2 (en) * 2001-07-25 2005-08-02 Nantero, Inc. Devices having vertically-disposed nanofabric articles and methods of making the same
US6574130B2 (en) * 2001-07-25 2003-06-03 Nantero, Inc. Hybrid circuit having nanotube electromechanical memory
US6835591B2 (en) 2001-07-25 2004-12-28 Nantero, Inc. Methods of nanotube films and articles
US6706402B2 (en) 2001-07-25 2004-03-16 Nantero, Inc. Nanotube films and articles
US7259410B2 (en) * 2001-07-25 2007-08-21 Nantero, Inc. Devices having horizontally-disposed nanofabric articles and methods of making the same
JP2005510086A (ja) * 2001-11-21 2005-04-14 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ヘテロ接合半導体デバイス及び当該デバイスを製造する方法
US6784028B2 (en) 2001-12-28 2004-08-31 Nantero, Inc. Methods of making electromechanical three-trace junction devices
US7176505B2 (en) * 2001-12-28 2007-02-13 Nantero, Inc. Electromechanical three-trace junction devices
US7335395B2 (en) 2002-04-23 2008-02-26 Nantero, Inc. Methods of using pre-formed nanotubes to make carbon nanotube films, layers, fabrics, ribbons, elements and articles
US6759693B2 (en) 2002-06-19 2004-07-06 Nantero, Inc. Nanotube permeable base transistor
US6774052B2 (en) * 2002-06-19 2004-08-10 Nantero, Inc. Method of making nanotube permeable base transistor
US7560136B2 (en) * 2003-01-13 2009-07-14 Nantero, Inc. Methods of using thin metal layers to make carbon nanotube films, layers, fabrics, ribbons, elements and articles

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS526076B1 (enExample) * 1971-04-28 1977-02-18
JPS5598871A (en) * 1979-01-22 1980-07-28 Semiconductor Res Found Static induction transistor
US4378629A (en) * 1979-08-10 1983-04-05 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor, fabrication method
US4353081A (en) * 1980-01-29 1982-10-05 Bell Telephone Laboratories, Incorporated Graded bandgap rectifying semiconductor devices
JPS56124273A (en) * 1980-03-04 1981-09-29 Semiconductor Res Found Semiconductor device
US4366493A (en) * 1980-06-20 1982-12-28 International Business Machines Corporation Semiconductor ballistic transport device
FR2504732A1 (fr) * 1981-04-27 1982-10-29 Thomson Csf Transistor tunnel a double heterojonction
FR2514949A1 (fr) * 1981-10-16 1983-04-22 Thomson Csf Transistor a effet de champ a canal vertical
JPS60254778A (ja) * 1984-05-31 1985-12-16 Fujitsu Ltd 半導体装置
JPS6194375A (ja) * 1984-10-16 1986-05-13 Nippon Telegr & Teleph Corp <Ntt> 超格子ｐｂｔ

Also Published As

Publication number Publication date
EP0183474B1 (en) 1991-04-24
EP0183474A2 (en) 1986-06-04
US4903090A (en) 1990-02-20
EP0183474A3 (en) 1987-10-21
DE3582653D1 (de) 1991-05-29
JPS61121369A (ja) 1986-06-09
JPH0354869B2 (enExample) 1991-08-21

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