KR890003015A - Method for forming high melting point metal film and apparatus therefor - Google Patents

Method for forming high melting point metal film and apparatus therefor Download PDF

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Publication number
KR890003015A
KR890003015A KR1019880008585A KR880008585A KR890003015A KR 890003015 A KR890003015 A KR 890003015A KR 1019880008585 A KR1019880008585 A KR 1019880008585A KR 880008585 A KR880008585 A KR 880008585A KR 890003015 A KR890003015 A KR 890003015A
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South Korea
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melting point
high melting
point metal
metal film
temperature
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KR1019880008585A
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Korean (ko)
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KR910006972B1 (en
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이와오 꾸니시마
히도시 이또우
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아오이 죠이찌
가부시끼 가이샤 도시바
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Publication of KR910006972B1 publication Critical patent/KR910006972B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

내용 없음No content

Description

고융점 금속막의 형성 방법 및 그 장치Method for forming high melting point metal film and apparatus therefor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 3 도는 본 발명을 실시한 고융점 금속막의 형성 방법을 나타내는 제조공정 단면도. 제 4 도는 본 발명을 실시한 고융점 금속막의 형성 장치의 개략 구성도. 제 5 도는 본 발명에 따른 형성 장치의 변형예의 개략 구성도.3 is a cross sectional view of the production process showing a method for forming a high melting point metal film according to the present invention. 4 is a schematic configuration diagram of an apparatus for forming a high melting point metal film according to the present invention. 5 is a schematic configuration diagram of a modification of the forming apparatus according to the present invention.

Claims (10)

(a)반응 용기내의 적어도 고융점 금속의 화합물 가스를 포함하는 가스를 주입하여 전술한 반응 용기내에 배치되는 기판상의 소정의 영역에 화학적 기상 성장에 의해 고융점 금속막을 미리 정해진 제 1 의 온도에서 형성하고: (b)연속하여 상기 제 1 의 온도를 넘는 미리 정해진 제 2 의 온도에서 열처리 하는 것을 특징으로 하는 고융점 금속막의 형성방법.(a) injecting a gas containing at least a high melting point metal compound gas in a reaction vessel to form a high melting point metal film at a predetermined first temperature by chemical vapor phase growth in a predetermined region on a substrate disposed in the reaction vessel described above; And (b) successively performing heat treatment at a predetermined second temperature above the first temperature. 제 1 항에 있어서, 미리 결정된 제 1 의 온도가 250oC-400oC이며 상기한 미리 결정된 제 2 의 온도가 400oC~600oC인 것을 특징으로 하는 고융점 금속막의 형성 방법.The method of forming a high melting point metal film according to claim 1, wherein the predetermined first temperature is 250 ° C-400 ° C and the predetermined second temperature is 400 ° C-600 ° C. 제 1 항에 있어서, 고융점 금속막을 형성하는 단계로부터 전술한 열처리 단계에서 상기 제 1 의 온도를 밀도는 온도의 공정을 거치지 않고 이행되는 것을 특징으로 하는 고융점 금속막의 형성방법.2. The method of forming a high melting point metal film according to claim 1, wherein the forming of the high melting point metal film is carried out in the above-described heat treatment step without going through a process of densifying the first temperature. 제 1 항에 있어서, 화학적 기상 성장법을 사용하여 형성하는 고융점 금속이 텅스텐막, 몰리브덴막 또는 실리 사이드막인 것을 특징으로 하는 고융점 금속막의 형성방법.2. The method for forming a high melting point metal film according to claim 1, wherein the high melting point metal formed by chemical vapor deposition is a tungsten film, a molybdenum film, or a silicide film. 제 1 항에 있어서, 고융점 금속막을 형성하는 단계로부터 열처리를 하는 단계까지 감압하에서 행하며 그 후 반응 용기안을 대기압으로 하는 것을 특징으로 하는 고융점 금속막의 형성방법.2. The method for forming a high melting point metal film according to claim 1, wherein the high melting point metal film is formed under reduced pressure from the step of forming the high melting point metal film to the heat treatment step. 제 1 항에 있어서, 열처리를 하는 단계가 상기 반응 용기안에서 행하여 지는 것을 특징으로 하는 고융점 금속막의 형성방법.2. The method for forming a high melting point metal film according to claim 1, wherein the heat treatment is performed in the reaction vessel. (a)고융점 금속의 화합물 가스를 포함하는 가스를 주입하므로서 기판상의 소정의 영역에 화학적 기상 성장에 의해 고융점 금속막을 형성하기 위한 반응 용기와: (b)전술한 반응 용기 안에서 상기 고융점 금속막을 형성하기 위해 미리 결정된 제 1 의 온도를 발생시키는 제 1 의 가열장치와:(c)전술한 반응 용기내의 온도가 상기 제 1 의 온도보다 내려가지 않는 범위에서 상기 제 1 의 온도를 넘는 제 2 의 온도에서 상기 기판 및 금속막에 열처리를 하기위한 제 2 의 가열장치로 이루어지는 것을 특징으로 하는 고융점 금속막의 형성장치.(a) a reaction vessel for forming a high melting point metal film by chemical vapor phase growth in a predetermined region on a substrate by injecting a gas containing a compound gas of a high melting point metal: (b) the high melting point metal in the reaction vessel described above; A first heating device for generating a predetermined first temperature to form a film; and (c) a second above said first temperature in a range such that the temperature in said reaction vessel does not fall below said first temperature. And a second heating device for heat-treating the substrate and the metal film at a temperature of. 제 7 항에 있어서, 제 2 의 가열장치가 상기 기판 및 금속막에 상기 제 1 의 온도를 밀도는 온도 공정없이 상기 제 2 의 온도에서 열처리를 하기 위해 상기 제 1 의 가열 장치의 연속 동작중에 한해 동작되도록 구성되어 있는 것을 특징으로 하는 고융점 금속막의 형성 장치.8. The method of claim 7, wherein a second heating device is subjected to continuous operation of the first heating device so as to heat-treat the second temperature without the temperature process of densifying the first temperature on the substrate and the metal film. An apparatus for forming a high melting point metal film, which is configured to operate. 제 8 항에 있어서, 제 1 및 제 2 의 가열 장치가 전술한 반응 용기에 설치된 제 1 및 제 2 의 가열기로부터 만들어지는 것을 특징으로 하는 고융점 금속막의 형성 장치.9. The apparatus for forming a high melting point metal film according to claim 8, wherein the first and second heating devices are made from the first and second heaters provided in the reaction vessel described above. 제 8 항에 있어서, 제 1 의 가열장치가 전술한 반응 용기에 설치된 제 1 의 가열기로부터 만들어지며 전술한 제 2 의 가열 장치가 제 2 의 용기와 제 2 의 용기에 설치된 제 2 의 가열기와 상기 제 2 의 용기와 반응 용기를 잇는 덕트와 상기 덕트를 개폐하기 위한 상기 덕트에 설치된 밸브로부터 만들어지는 것을 특징으로 하는 고융점 금속막의 형성장치.9. The apparatus of claim 8, wherein the first heater is made from a first heater installed in the above-described reaction vessel, and the above-mentioned second heater is provided with a second heater installed in the second vessel and the second vessel. And a duct connecting the second vessel and the reaction vessel and a valve provided in the duct for opening and closing the duct. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019880008585A 1987-07-10 1988-07-09 Method of manufacturing for metallic layer of semiconductor KR910006972B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62171219A JP2694950B2 (en) 1987-07-10 1987-07-10 Method of forming high melting point metal film
JP62-171219 1987-07-10
JP?62-171219 1987-07-10

Publications (2)

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KR890003015A true KR890003015A (en) 1989-04-12
KR910006972B1 KR910006972B1 (en) 1991-09-14

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KR1019880008585A KR910006972B1 (en) 1987-07-10 1988-07-09 Method of manufacturing for metallic layer of semiconductor

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930002673B1 (en) * 1990-07-05 1993-04-07 삼성전자 주식회사 Growing method of metal having high melting point
JPH05347272A (en) * 1991-01-26 1993-12-27 Sharp Corp Manufacture of semiconductor device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203652A (en) * 1985-03-07 1986-09-09 Toshiba Corp Manufacture of semiconductor device

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JP2694950B2 (en) 1997-12-24
JPS6415917A (en) 1989-01-19
KR910006972B1 (en) 1991-09-14

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