KR890002913A - 소형 초전도 솔레노이드 제조방법 - Google Patents
소형 초전도 솔레노이드 제조방법 Download PDFInfo
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- KR890002913A KR890002913A KR1019880008645A KR880008645A KR890002913A KR 890002913 A KR890002913 A KR 890002913A KR 1019880008645 A KR1019880008645 A KR 1019880008645A KR 880008645 A KR880008645 A KR 880008645A KR 890002913 A KR890002913 A KR 890002913A
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- South Korea
- Prior art keywords
- gas
- range
- thin film
- superconducting
- slits
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- 238000004519 manufacturing process Methods 0.000 title claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 13
- 239000000463 material Substances 0.000 claims 6
- 239000010409 thin film Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 4
- 230000000737 periodic effect Effects 0.000 claims 3
- 238000005289 physical deposition Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910052691 Erbium Inorganic materials 0.000 claims 1
- 229910052693 Europium Inorganic materials 0.000 claims 1
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- 229910052689 Holmium Inorganic materials 0.000 claims 1
- 229910052765 Lutetium Inorganic materials 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910002367 SrTiO Inorganic materials 0.000 claims 1
- 229910052775 Thulium Inorganic materials 0.000 claims 1
- 229910052769 Ytterbium Inorganic materials 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 claims 1
- 239000010408 film Substances 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- 230000000149 penetrating effect Effects 0.000 claims 1
- 238000005240 physical vapour deposition Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 229910052594 sapphire Inorganic materials 0.000 claims 1
- 239000010980 sapphire Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 1
- 210000001364 upper extremity Anatomy 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F6/00—Superconducting magnets; Superconducting coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
- H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
- H01F41/041—Printed circuit coils
- H01F41/047—Printed circuit coils structurally combined with superconductive material
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4504—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing rare earth oxides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4512—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing thallium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/45—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides
- C04B35/4521—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on copper oxide or solid solutions thereof with other oxides containing bismuth oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0296—Processes for depositing or forming copper oxide superconductor layers
- H10N60/0408—Processes for depositing or forming copper oxide superconductor layers by sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
- H01F2017/0086—Printed inductances on semiconductor substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/70—High TC, above 30 k, superconducting device, article, or structured stock
- Y10S505/701—Coated or thin film device, i.e. active or passive
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/728—Etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
- Y10S505/73—Vacuum treating or coating
- Y10S505/732—Evaporative coating with superconducting material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Manufacture Of Motors, Generators (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 (a)-(d)도는 본 발명에 따라 다수의 초전도 솔레노이드를 제조하기 위한 연속단계를 예시하는 일련의 단면도이고, 제 1 (b)도는 제 2도의 A-A선을 따라 취한 부분단면도임. 제 2 도는 제 1 (b)도에 해당하는 제조 단계에서 페턴된 슬리트를 가진 실리콘웨이퍼의 평면도임.
Claims (13)
- 초형조전도 솔레노이드의 제조방법으로서, 기체를 관통하는 슬리트를 2개이상 만들어 인접하는 두 슬리트 사이의 일부분의 기체에 의해 한정되는 코어를 형성시키고 최소한 상기 기체의 상하표면의 소정부위에 그리고 상기 슬리트의 벽에 물리적증착기법으로 복합산화물형 초전도물질의 박막을 용착하여 상지 코어둘레에 링형상의 초전도박막을 형성시키는 것으로 구성되는 공정들에 의해 특징되는 소형 초전도 솔레노이드 제조방법.
- 제 1 항에 있어서, 상기 기체는 실리콘 웨이퍼인 것을 특징으로 하는 방법.
- 제 1 항 또는 2항에 있어서, 상기 슬리트는 기체에 평행선 패턴으로 커트되는 것을 특징으로 하는 방법.
- 제 1 항-3항중의 어느 한 항에 있어서, 상기 박막이 용착되지 않는 상기 기체의 잔여표면은 물리적 중착전에 마스킹되는 것을 특징으로 하는 방법.
- 제 1 항-4항중 어느 한 항에 있어서, 개별 솔레노이드로 분리가능한 다수의 소형 솔레노이드가 공통기체상에 제조되는 것을 특징으로 하는 방법.
- 제 1 항-5항중의 어느 한 항에 있어서, 상기 박막을 물리적 중착기법에 의하여 상기 기체의 상하 전표면 및 상기 슬리트벽에 중착시킨후, 상기 중착된 박막의 일부를 제거하여 코어둘레에만 링형상의 초전도박막이 잔존하게 하는 것을 특징으로 하는 방법.
- 제 1 항-6항중 어느 한 항에 있어서, 상기 초전도물질은 다음 일반식, 즉(α1-xβx) yOz(위식에서 α는 주기율표 Ⅱa족 원소를, β는 주기율표 Ⅲa족 원소를,는 주기율표 Ib족, Ⅱb족, Ⅲb족, Ⅳb족 및 Ⅷ족으로 구성되는 군에서 선택되는 원소를 나타내며, x는 0.1x0.9 범위의 수이고 y는 0.1y4.0 범위의 수이며, z는 1z5 범위의 수임)에 의해 대표되는 복합산화물인 것을 특징으로 하는 방법.
- 제 7 항에 있어서, 상기 초전도 물질은 다옴 일반식,즉Ln1Ba2Cu307-δ(위식에서 Ln은 Y, La, Gd, Ho, Er, Tm, Yb, Nd, Eu, Sm 및 Lu로 구성되는 군에서 선택되는 원소이고 δ는 0δ1의 범위를 만족하는 수임)에 의해 대표되는 복합산화물인 것을 특징으로 하는 방법.
- 제 1 항-6항중에 있어서, 상기 초전도 물질은 다음 일반식, 즉θ4( 1-q,Caq)mCunPP+r(위 식에서, θ는 Bi 또는 T1을,는 θ가 Bi일경우 Sr그리고 θ가 T1일경우 Ba를 나타내며, m 및 n은 각각 6m10 및 4n8의 범위를 만족하는 수이며, p=(6+m+n), q는 oq1의 범위를 만족하는 수이고, r은 -2r+2의 범위를 만족하는 수임)에 의해 대표되는 복합산화물인 것을 특징으로 하는 방법.
- 제 1 항에 있어서, 상기 기체는 MgO, SrTiO3, Al203, 사파이어, SiO2, 석영, YSZ 및 ZnO으로 구성되는 군에서 선택되는 물질로 만들어진 것을 특징으로 하는 방법.
- 제 1 항-제10항중의 어느 한 항에 있어서, 상기 슬리트는 에칭에 의해 커트되는 것을 특징으로 하는 방법.
- 제11항에 있어서, 상기 에칭은 비등방성 에칭기법과 등방성에칭기법의 조합에 의해 수행되는 것을 특징으로 하는 방법.
- 제 1 항-제12항중의 어느 한 항에 있어서, 상기 슬리트가 기체에 커트된후, 이 기체를 열처리하여 기체산화물의 박막층을 형성시키는 것을 특징으로 하는 방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62178036A JPH0779050B2 (ja) | 1987-07-16 | 1987-07-16 | 小型超電導ソレノイドの製造方法 |
JP62-178036 | 1987-07-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR890002913A true KR890002913A (ko) | 1989-04-11 |
Family
ID=16041464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880008645A KR890002913A (ko) | 1987-07-16 | 1988-07-12 | 소형 초전도 솔레노이드 제조방법 |
Country Status (6)
Country | Link |
---|---|
US (1) | US4937226A (ko) |
EP (1) | EP0299442B1 (ko) |
JP (1) | JPH0779050B2 (ko) |
KR (1) | KR890002913A (ko) |
CA (1) | CA1315530C (ko) |
DE (1) | DE3870524D1 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5140300A (en) * | 1988-10-24 | 1992-08-18 | Sharp Kabushiki Kaisha | Superconductive magneto-resistive device comprising laminated superconductive ceramic films |
CA2053549A1 (en) * | 1990-11-15 | 1992-05-16 | John A. Agostinelli | Construction of high temperature josephson junction device |
JP3425814B2 (ja) * | 1994-12-28 | 2003-07-14 | 日本信号株式会社 | 電磁アクチュエータ及びその製造方法 |
FR2833703B1 (fr) * | 2001-12-19 | 2004-04-02 | Tijani Gharbi | Dispositif d'accrochage de tissu biologique, systeme de mesure utilisant un tel dispositif et procede de fixation d'un tissu biologique utilisant un tel dispositif |
US8202439B2 (en) * | 2002-06-05 | 2012-06-19 | Panasonic Corporation | Diaphragm and device for measuring cellular potential using the same, manufacturing method of the diaphragm |
AU2003255643A1 (en) * | 2003-06-05 | 2005-01-21 | Vincent Thomas Armbruster | Measuring system for measuring at least one characteristic of a biological tissue and method for fixing a biological tissue to a measuring system of this type |
WO2019075668A1 (en) * | 2017-10-18 | 2019-04-25 | Goertek.Inc | FLAT COIL, METHOD FOR MANUFACTURING SAME, AND ELECTRONIC APPARATUS |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1027795A (en) * | 1962-11-02 | 1966-04-27 | Int Computers & Tabulators Ltd | Improvements in or relating to cryogenic switching devices |
FR1469939A (fr) * | 1965-02-25 | 1967-02-17 | Union Carbide Corp | Dispositifs supraconducteurs |
BE862654A (fr) * | 1977-01-13 | 1978-07-05 | Cit Alcatel | Procede de realisation de circuits inductifs |
GB1596985A (en) * | 1977-03-14 | 1981-09-03 | Imi Kynoch Ltd | Electrical windings |
US4732647A (en) * | 1984-10-24 | 1988-03-22 | Aine Harry E | Batch method of making miniature capacitive force transducers assembled in wafer form |
JPS61279167A (ja) * | 1985-06-05 | 1986-12-09 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
-
1987
- 1987-07-16 JP JP62178036A patent/JPH0779050B2/ja not_active Expired - Lifetime
-
1988
- 1988-07-05 CA CA000571153A patent/CA1315530C/en not_active Expired - Fee Related
- 1988-07-12 KR KR1019880008645A patent/KR890002913A/ko not_active Application Discontinuation
- 1988-07-12 EP EP88111158A patent/EP0299442B1/en not_active Expired - Lifetime
- 1988-07-12 DE DE8888111158T patent/DE3870524D1/de not_active Expired - Fee Related
- 1988-07-18 US US07/220,166 patent/US4937226A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CA1315530C (en) | 1993-04-06 |
US4937226A (en) | 1990-06-26 |
JPH0779050B2 (ja) | 1995-08-23 |
EP0299442A1 (en) | 1989-01-18 |
EP0299442B1 (en) | 1992-04-29 |
DE3870524D1 (de) | 1992-06-04 |
JPS6421905A (en) | 1989-01-25 |
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