KR880011028A - 석영제 2중도가니의 제조방법 - Google Patents

석영제 2중도가니의 제조방법 Download PDF

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Publication number
KR880011028A
KR880011028A KR1019880000404A KR880000404A KR880011028A KR 880011028 A KR880011028 A KR 880011028A KR 1019880000404 A KR1019880000404 A KR 1019880000404A KR 880000404 A KR880000404 A KR 880000404A KR 880011028 A KR880011028 A KR 880011028A
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KR
South Korea
Prior art keywords
crucible
manufacturing
quartz double
double crucible
quartz
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Application number
KR1019880000404A
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English (en)
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KR940009939B1 (ko
Inventor
미찌오 기다
켄시요우 사히라
Original Assignee
나가노 다께시
미쓰비시 긴소꾸 가부시기 가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 나가노 다께시, 미쓰비시 긴소꾸 가부시기 가이샤 filed Critical 나가노 다께시
Publication of KR880011028A publication Critical patent/KR880011028A/ko
Application granted granted Critical
Publication of KR940009939B1 publication Critical patent/KR940009939B1/ko

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/20—Uniting glass pieces by fusing without substantial reshaping
    • C03B23/207—Uniting glass rods, glass tubes, or hollow glassware
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C30B15/12—Double crucible methods
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

내용 없음

Description

석영제 2중도가니의 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도 및 제2도는 본 발명의 석영제 2중도가니의 제조방법에 사용되는 단(單)결정제조 장치의 단면도
제3도는 일반적인 단결정 제조장치의 단면도

Claims (2)

  1. 사세프타(10)의 내부에 외도가니부재(11) 및 내도가니부재(12)를 서로 접하도록 배치하고, 이들을 1350-1650℃로 가열하고 전기한 양도가니부재(11)(2)를 접합시키는 것을 특징으로 하는 석영제 2중 도가니의 제조방법.
  2. 제1항에 있어서, 전기한 가열을 행함에 있어서 내도가니부재(12)내에 원료실리콘(17)을 수용하고 이를 용해시키는 것을 특징으로 하는 석영제 2중도가니의 제조방법.
    ※참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019880000404A 1987-03-20 1988-01-20 석영제 2중도가니의 제조방법 KR940009939B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP62067128A JPH0733305B2 (ja) 1987-03-20 1987-03-20 石英製二重ルツボの製造方法
JP62-67128 1987-03-20
JP87-67128 1987-03-20

Publications (2)

Publication Number Publication Date
KR880011028A true KR880011028A (ko) 1988-10-25
KR940009939B1 KR940009939B1 (ko) 1994-10-19

Family

ID=13335954

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880000404A KR940009939B1 (ko) 1987-03-20 1988-01-20 석영제 2중도가니의 제조방법

Country Status (5)

Country Link
US (1) US5069741A (ko)
EP (1) EP0283903B1 (ko)
JP (1) JPH0733305B2 (ko)
KR (1) KR940009939B1 (ko)
DE (1) DE3881561T2 (ko)

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JP2774978B2 (ja) * 1989-06-22 1998-07-09 住友シチックス株式会社 石英製二重ルツボの製造法及び二重ルツボ装置
JP2709644B2 (ja) * 1990-04-25 1998-02-04 東芝セラミックス 株式会社 シリコン単結晶製造用石英るつぼの製造方法
JPH0825833B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造方法
JPH0825836B2 (ja) * 1990-04-27 1996-03-13 東芝セラミックス株式会社 シリコン単結晶の製造装置
JPH0412084A (ja) * 1990-04-27 1992-01-16 Nkk Corp シリコン単結晶の製造装置
US5474022A (en) * 1994-04-21 1995-12-12 Mitsubishi Materials Corporation Double crucible for growing a silicon single crystal
JP2830990B2 (ja) * 1995-05-31 1998-12-02 信越石英株式会社 石英製二重ルツボの製造方法
JPH10158088A (ja) * 1996-11-25 1998-06-16 Ebara Corp 固体材料の製造方法及びその製造装置
JP2002060296A (ja) * 2000-08-21 2002-02-26 Crystal System:Kk 単結晶製造用るつぼおよび単結晶製造装置ならびにこれを用いた単結晶の製造方法
US6550279B1 (en) 2000-09-01 2003-04-22 Corning Incorporated Process for drawing optical fiber from a multiple crucible apparatus with a thermal gradient
US6588235B2 (en) 2001-08-30 2003-07-08 Corning Incorporated Method of centering a fiber core in a multiple-crucible method
US7691199B2 (en) * 2004-06-18 2010-04-06 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7465351B2 (en) * 2004-06-18 2008-12-16 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7344594B2 (en) * 2004-06-18 2008-03-18 Memc Electronic Materials, Inc. Melter assembly and method for charging a crystal forming apparatus with molten source material
US7862656B2 (en) * 2007-07-03 2011-01-04 Siemens Medical Solutions Usa, Inc. Apparatus and method for growing a crystal and heating an annular channel circumscribing the crystal
JP5523018B2 (ja) * 2008-08-30 2014-06-18 株式会社Ｓｕｍｃｏ 石英ルツボの製造装置
DE102009021003A1 (de) * 2009-05-12 2010-11-18 Centrotherm Sitec Gmbh Verfahren und Vorrichtung zur Bereitstellung flüssigen Siliziums
CN102168302B (zh) * 2011-04-13 2012-11-07 天津市环欧半导体材料技术有限公司 一种用于生产直拉硅单晶的双石英坩埚装置及方法
CN102363899A (zh) * 2011-06-30 2012-02-29 常州天合光能有限公司 一种连续加料用石英坩埚
WO2014100487A2 (en) * 2012-12-21 2014-06-26 Sunedison, Inc. Methods to bond silica parts
KR101761700B1 (ko) * 2015-12-18 2017-07-28 주식회사 선익시스템 금속 박막 증착용 도가니 및 금속 박막 증착용 증발원
US20190078231A1 (en) * 2017-09-08 2019-03-14 Corner Star Limited Hybrid crucible assembly for czochralski crystal growth
EP3700860A4 (en) 2017-10-27 2021-08-11 Northern Silicon Inc. SYSTEM AND PROCESS FOR MANUFACTURING HIGHLY PURE SILICON
WO2020210129A1 (en) 2019-04-11 2020-10-15 Globalwafers Co., Ltd. Process for preparing ingot having reduced distortion at late body length
CN109850905B (zh) * 2019-04-16 2020-11-06 大连理工大学 一种电子束熔炼过程中提高挥发性杂质除杂量的方法及装置
WO2020214531A1 (en) 2019-04-18 2020-10-22 Globalwafers Co., Ltd. Methods for growing a single crystal silicon ingot using continuous czochralski method
US11111596B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Single crystal silicon ingot having axial uniformity
US11111597B2 (en) 2019-09-13 2021-09-07 Globalwafers Co., Ltd. Methods for growing a nitrogen doped single crystal silicon ingot using continuous Czochralski method
CN111195731B (zh) * 2020-01-10 2023-03-24 上海电气集团股份有限公司 一种底孔式坩埚感应熔炼气雾化制粉装置及方法

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Publication number Priority date Publication date Assignee Title
GB816334A (en) * 1954-12-24 1959-07-08 Telefunken Gmbh Improvements in or relating to crucibles
NL112257C (ko) * 1958-07-11
DE1194820B (de) * 1960-03-30 1965-06-16 Telefunken Patent Verfahren zum Ziehen von Einkristallen homogener Stoerstellenkonzentration und Vorrichtung zur Durchfuehrung des Verfahrens
US3240568A (en) * 1961-12-20 1966-03-15 Monsanto Co Process and apparatus for the production of single crystal compounds
DE2245250A1 (de) * 1972-09-15 1974-03-21 Philips Patentverwaltung Vorrichtung zum ziehen von kristallen, vorzugsweise einkristallen aus der schmelze
DE2259353C3 (de) * 1972-12-04 1975-07-10 Heraeus-Quarzschmelze Gmbh, 6450 Hanau Tiegel aus Quarzglas oder Quarzgut zur Verwendung beim Züchten von Einkristallen
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US4036595A (en) * 1975-11-06 1977-07-19 Siltec Corporation Continuous crystal growing furnace
US4235848A (en) * 1978-06-15 1980-11-25 Apilat Vitaly Y Apparatus for pulling single crystal from melt on a seed
US4352784A (en) * 1979-05-25 1982-10-05 Western Electric Company, Inc. Double crucible Czochralski crystal growth apparatus
JPS61281100A (ja) * 1985-06-05 1986-12-11 Toshiba Ceramics Co Ltd シリコン単結晶の製造方法
JPS6270291A (ja) * 1985-09-19 1987-03-31 Toshiba Corp ＧａＡｓ単結晶の製造方法及び装置
USH520H (en) * 1985-12-06 1988-09-06 Technique for increasing oxygen incorporation during silicon czochralski crystal growth

Also Published As

Publication number Publication date
DE3881561D1 (de) 1993-07-15
US5069741A (en) 1991-12-03
EP0283903A2 (en) 1988-09-28
DE3881561T2 (de) 1993-11-18
JPS63233092A (ja) 1988-09-28
JPH0733305B2 (ja) 1995-04-12
KR940009939B1 (ko) 1994-10-19
EP0283903A3 (en) 1989-06-07
EP0283903B1 (en) 1993-06-09

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