KR880004585A - EL display element - Google Patents

EL display element Download PDF

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Publication number
KR880004585A
KR880004585A KR1019860007455A KR860007455A KR880004585A KR 880004585 A KR880004585 A KR 880004585A KR 1019860007455 A KR1019860007455 A KR 1019860007455A KR 860007455 A KR860007455 A KR 860007455A KR 880004585 A KR880004585 A KR 880004585A
Authority
KR
South Korea
Prior art keywords
display element
dielectric layer
insulating film
thickness
electrode group
Prior art date
Application number
KR1019860007455A
Other languages
Korean (ko)
Other versions
KR900001405B1 (en
Inventor
류재화
Original Assignee
구자학
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 구자학, 주식회사 금성사 filed Critical 구자학
Priority to KR1019860007455A priority Critical patent/KR900001405B1/en
Priority to JP62222154A priority patent/JPS63108698A/en
Publication of KR880004585A publication Critical patent/KR880004585A/en
Application granted granted Critical
Publication of KR900001405B1 publication Critical patent/KR900001405B1/en
Priority to JP1991027543U priority patent/JPH04102195U/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

내용 없음No content

Description

EL표시소자EL display element

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래 EL 표시소자의 구성을 사시도.1 is a perspective view showing the structure of a conventional EL display element.

제2도는 본 발명 EL 표시소자의 구성을 보인 사시도.2 is a perspective view showing the configuration of the EL display element of the present invention.

Claims (3)

유리기관(10)상에투명전극군(11),1차유전층(12), 형광층(13), 2차유전층(14)이 차례로 형성되는 EL표시소자에 있어서, 2차 유전층(14)의 상면에 절연성 및 광흡수성이 양호하고 수분과의 친화력이 매우 낮은 감광절연막(15)을 코팅하여 식가하고, 그위에는 상,하부 전극선(16a) (16b)을 가지는 금속배면전극군(16)을 중착한 후 상부 전극선(16a)의 전체폭에서 50-90%가 되도록 에칭부(17)를 형성하여 구성함을 특징으로 하는 EL 표시소자.In the EL display element in which the transparent electrode group 11, the primary dielectric layer 12, the fluorescent layer 13, and the secondary dielectric layer 14 are sequentially formed on the glass tube 10, the secondary dielectric layer 14 The photosensitive insulating film 15 having good insulation and light absorption and having a very low affinity with moisture is coated on the upper surface, and is cooled. And an etching portion (17) formed so as to be 50-90% of the entire width of the upper electrode line (16a) after bonding. 제 1항에 있어서, 감광절연막(15)의 두께가 10㎛ 이하이고, 150-300um의 폭을 가지도록 광식각법으로 에칭되는 것을 특징으로 하는 EL 표시소자.An EL display device according to claim 1, wherein the photosensitive insulating film (15) is 10 mu m or less in thickness, and is etched by photoetching so as to have a width of 150-300 um. 제 1항에 있어서, 금속배면 전극군(16)의 두께가 약 2000Å인 것을 특징으로 하는 EL 표시소자.An EL display element according to claim 1, wherein the metal back electrode group (16) has a thickness of about 2000 kPa. ※ 참고사항:최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860007455A 1986-09-06 1986-09-06 Thin film el display device KR900001405B1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1019860007455A KR900001405B1 (en) 1986-09-06 1986-09-06 Thin film el display device
JP62222154A JPS63108698A (en) 1986-09-06 1987-09-07 Thin film electroluminescence display device
JP1991027543U JPH04102195U (en) 1986-09-06 1991-04-22 Thin film electroluminescent display element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019860007455A KR900001405B1 (en) 1986-09-06 1986-09-06 Thin film el display device

Publications (2)

Publication Number Publication Date
KR880004585A true KR880004585A (en) 1988-06-07
KR900001405B1 KR900001405B1 (en) 1990-03-09

Family

ID=19252141

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007455A KR900001405B1 (en) 1986-09-06 1986-09-06 Thin film el display device

Country Status (2)

Country Link
JP (2) JPS63108698A (en)
KR (1) KR900001405B1 (en)

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2428373C2 (en) * 1974-06-12 1982-05-27 Siemens AG, 1000 Berlin und 8000 München Method for the production of solderable connection contacts on a semiconductor arrangement
JPS57100468A (en) * 1980-12-15 1982-06-22 Fujitsu Ltd El display element
JPS6074290A (en) * 1983-09-24 1985-04-26 ホ−ヤ株式会社 Thin film el element
JPS60154623A (en) * 1984-01-25 1985-08-14 Hitachi Ltd Manufacture of semiconductor device
JPS60185395A (en) * 1984-03-02 1985-09-20 日産自動車株式会社 Thin film el element
JPS60247947A (en) * 1984-05-23 1985-12-07 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
KR900001405B1 (en) 1990-03-09
JPH04102195U (en) 1992-09-03
JPS63108698A (en) 1988-05-13

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