JPH04102195U - Thin film electroluminescent display element - Google Patents
Thin film electroluminescent display elementInfo
- Publication number
- JPH04102195U JPH04102195U JP1991027543U JP2754391U JPH04102195U JP H04102195 U JPH04102195 U JP H04102195U JP 1991027543 U JP1991027543 U JP 1991027543U JP 2754391 U JP2754391 U JP 2754391U JP H04102195 U JPH04102195 U JP H04102195U
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- electrode
- electroluminescent display
- display element
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 19
- 229910052751 metal Inorganic materials 0.000 claims abstract description 41
- 239000002184 metal Substances 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 38
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims 1
- 230000015556 catabolic process Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 3
- 230000002745 absorbent Effects 0.000 abstract 1
- 239000002250 absorbent Substances 0.000 abstract 1
- 230000007774 longterm Effects 0.000 abstract 1
- 230000003287 optical effect Effects 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000007547 defect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000031700 light absorption Effects 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000005401 electroluminescence Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
(57)【要約】
【目的】 絶縁破損現象に影響を受けることなく、高い
駆動電圧下においても長時間安定な駆動を可能にする。
【構成】 硝子基板（10）上に、透明電極群（11）、１
次誘電層（12）、蛍光層（13）、２次誘電層（14）を順
次形成してなる薄膜電子ルミネセンス表示素子におい
て、前記２次誘電層（14）の上面部に絶縁性及び光吸収
性で且つ水分との親和力が極めて低い感光絶縁膜（15）
を所定パターンに形成し、該感光絶縁膜（15）の上面か
ら前記２次誘電層（14）の上面にまたがるそれぞれ上部
金属電極（16′）と下部金属電極（16”）とを有する金
属背面電極群（16）を形成して成ることを特徴とする。
(57) [Summary] [Purpose] Enables long-term stable drive even under high drive voltage without being affected by insulation breakdown phenomena. [Structure] On the glass substrate (10), transparent electrode group (11), 1
In a thin film electroluminescent display element formed by sequentially forming a secondary dielectric layer (12), a fluorescent layer (13), and a secondary dielectric layer (14), the upper surface of the secondary dielectric layer (14) has an insulating and optical property. Photosensitive insulating film that is absorbent and has extremely low affinity for moisture (15)
is formed in a predetermined pattern, and has an upper metal electrode (16') and a lower metal electrode (16'') extending from the upper surface of the photosensitive insulating film (15) to the upper surface of the secondary dielectric layer (14), respectively. It is characterized by forming an electrode group (16).
Description
【０００１】0001
本考案は、薄膜電子ルミネセンス表示素子に係るもので、一層詳しくは、表示 素子の金属背面電極構造を、改良することに依り、絶縁破壊現象に影響を受ける ことがなく、高い駆動電圧下においても、長時間安定された駆動が行われるよう にした薄膜電子ルミネセンス表示素子に関するものである。 The present invention relates to a thin film electroluminescent display element, and more specifically, the present invention relates to a thin film electroluminescent display element. By improving the metal back electrode structure of the device, it is less susceptible to dielectric breakdown phenomena. This ensures stable driving for long periods of time even under high driving voltage. The present invention relates to a thin film electroluminescent display element made of
【０００２】0002
一般に、外部エネルギーにより、或る物質が励起される場合には、そのエネル ギー状態の変化に依り、短い波長の光を放出するようになるが、特に、このよう な現象において、温度とは無関係にその発光が電気的に誘導されておこる場合に 、それを電子ルミネセンス現象と称している。 Generally, when a substance is excited by external energy, the energy Depending on the change in the energy state, light with a shorter wavelength will be emitted. In some phenomena, when the light emission is electrically induced regardless of temperature, , which is called the electroluminescence phenomenon.
【０００３】 平面表示素子はこのような電子ルミネセンス効果を有効に使用しているもので あるが、その平面表示素子においてＸ−Ｙ電極マトリックスに電圧をかける電子 ルミネセンス膜の性質を実際的に活用するには、少なくない問題点がある。 すなわち、電子ルミネセンス膜に高電場が附加されると、その膜の或る位置で 電極の連結を破壊する局部的な絶縁破壊現象を起こすおそれがあり、一般に公知 の蒸着技術に依り電極を形成した場合に、しばしばその電子ルミネセンス表示板 の完全な線電極破壊現象をおこしている。0003 Flat display devices make effective use of such electroluminescence effects. However, in the flat display device, electrons that apply a voltage to the X-Y electrode matrix There are many problems in making practical use of the properties of luminescent films. In other words, when a high electric field is applied to an electroluminescent film, a certain position of the film It is generally known that there is a risk of localized dielectric breakdown phenomenon that destroys the connection of the electrodes. When electrodes are formed using vapor deposition techniques, the electroluminescent display panel is often A complete wire electrode breakdown phenomenon has occurred.
【０００４】 従来使用されていた薄膜電子ルミネセンス表示素子は、図２に示したように、 平面上の硝子基板（１）に、SnO2，In2O3 , ITO(Indium Tin Oxide) 等より成る 透明電極群（２）がコーティングされ、該透明電極群（２）は、所定の幅（約 1 50〜 300μｍ）を有するように相互平行にエッチングされて形成される。該透明 電極群（２）の上面部には、１次誘電膜（３）が形成され、該１次誘電膜（３） の上部には、ZnS;Ｍn の蛍光膜（４）及び２次誘電膜（５）が順次形成される。 又、該２次誘電膜（５）の上面部には、前記透明電極群（２）と、直角方向に交 叉されるアルミニウム背面電極群（６）がフォトエッチングに依り所定の幅(150 〜 300μｍ）に平行に形成される。Conventionally used thin film electroluminescent display elements, as shown in FIG. A transparent electrode group (2) consisting of the following is coated, and the transparent electrode group (2) is etched in parallel to each other so as to have a predetermined width (approximately 150 to 300 μm). A primary dielectric film (3) is formed on the upper surface of the transparent electrode group (2), and a ZnS;Mn fluorescent film (4) and a secondary dielectric film (4) are formed on the primary dielectric film (3). Membranes (5) are formed one after the other. Further, on the upper surface of the secondary dielectric film (5), an aluminum back electrode group (6) that crosses the transparent electrode group (2) at right angles is formed with a predetermined width (150 to 300 μm) by photo-etching. ) is formed parallel to.
【０００５】 そして、このような従来の電子ルミネセンス表示素子は、透明電極群（２）と 、アルミニウム背面電極群（６）との間に、所定の電圧(100〜 200Ｖ）がかかる と、１・２次誘電膜（３)(５）間に位置されたZnS;Ｍn の蛍光膜（４）が発光す るようになる。このように蛍光膜（４）が発光されるためには、臨界電場が約２ ×106 Ｖ／cmにならなければならず、このような臨界電場に到達されるための外 部電圧は、誘電率が高い誘電体を使用し且つ、蛍光膜（４）の厚さを薄くするこ とにより低下され得る。しかるに、膜の厚さの分布は、薄膜電子ルミネセンス表 示素子の絶縁破壊特性に影響を与えるようになり、誘電膜の厚さが薄い程、絶縁 破壊がおこる可能性が高くなるので、実際に電子ルミネセンス表示素子を製造す るに当っては、その膜の厚さを薄くするよりは、誘電率の高い誘電体を使用する のが望ましく、現在の技術では、膜の厚さを 500〜 600nm以上に保っている。[0005] In such a conventional electroluminescent display element, when a predetermined voltage (100 to 200 V) is applied between the transparent electrode group (2) and the aluminum back electrode group (6), 1 - The ZnS;Mn fluorescent film (4) located between the secondary dielectric films (3) and (5) begins to emit light. In order for the fluorescent film (4) to emit light in this way, the critical electric field must be approximately 2 × 10 6 V/cm, and the external voltage required to reach such a critical electric field is This can be reduced by using a dielectric with a high index and reducing the thickness of the phosphor film (4). However, the distribution of film thickness affects the dielectric breakdown characteristics of thin-film electroluminescent display elements, and the thinner the dielectric film is, the higher the possibility that dielectric breakdown will occur; When manufacturing electroluminescent display elements, it is preferable to use a dielectric material with a high dielectric constant rather than reducing the thickness of the film, and with current technology, the film thickness is reduced to 500 to 600 nm. I keep it above that.
【０００６】 一方、前記したような従来の構造において、透明電極群（２）とアルミニウム 背面電極群（６）に電気エネルギーが選択的に励起されると、それら電極群（２ )(６）の各画素が要求する像を形成するようになり、このように形成された像は 透明電極群（２）と硝子基板（１）とを通して現れるようになるが、この場合に 後面から放出される光は、アルミニウム背面電極群（６）により遮断されると同 時に反射されて前面電極の透明電極（２）に放出される。[0006] On the other hand, in the conventional structure as described above, the transparent electrode group (2) and aluminum When electrical energy is selectively excited in the back electrode group (6), the back electrode group (2) )(6) now forms the required image, and the image formed in this way is It appears through the transparent electrode group (2) and the glass substrate (1), but in this case, The light emitted from the rear surface is blocked by the aluminum back electrode group (6). Sometimes it is reflected and emitted to the transparent electrode (2) of the front electrode.
【０００７】 そして、前面電極の透明電極に直接放出される光と、アルミニウム背面電極群 （６）に反射されて前面電極に放出される光との比率（以下、画面のコントラス トという）が低下されるのを防ぐために、２次誘電膜（５）とアルミニウム背面 電極群（６）との間に、別途の光吸収膜（図示されていない）を形成することが できる。又、薄膜電子ルミネセンス表示素子に悪影響を及ぼす水分浸透を防ぐた めに、その表示素子の背面電極後面部を硝子により封じて真空を成すように形成 させている。[0007] Then, the light emitted directly to the transparent electrode of the front electrode and the aluminum back electrode group (6) Ratio of light reflected by the front electrode and emitted to the front electrode (hereinafter referred to as screen contrast) The secondary dielectric film (5) and the aluminum back surface are A separate light absorption film (not shown) may be formed between the electrode group (6). can. In addition, in order to prevent moisture penetration that has a negative effect on thin film electroluminescent display elements, For this purpose, the rear surface of the back electrode of the display element is sealed with glass to form a vacuum. I'm letting you do it.
【０００８】 このような従来の薄膜電子ルミネセンス表示素子は、蛍光膜（４）に存在する ピンホールの欠陥部により、ピンホール形態の破損がおこり易く、その破損現象 が背面電極群（６）の下部位で発生すると、その部位には、相当に高い電場がか かりそのピンホールに電気的破損がおこるようになる。すると、その電極の周囲 が、漏電領域のプラスマ放電により、漸次に溶融されて、漏電破損がおこるよう になる。[0008] Such a conventional thin film electroluminescent display element is present in the fluorescent film (4). Pinhole-shaped damage is likely to occur due to pinhole defects, and the damage phenomenon When this occurs at the lower part of the back electrode group (6), a considerably high electric field is applied to that part. This causes electrical damage to the pinhole. Then, the area around that electrode However, due to plasma discharge in the leakage area, it will gradually melt and cause leakage damage. become.
【０００９】 このようなピンホール形態の破損は、直ちにその電極自体を消耗させ且つその 部分の線電極の作動を停止させることになる問題点がある。[0009] Such pinhole-shaped damage immediately wears out the electrode itself and There are problems that result in the partial wire electrodes becoming inoperable.
【００１０】0010
本考案によれば、金属背面電極と２次誘電層との間に絶縁性及び光吸収性が良 好且つ、水分との親和性が極めて低い感光絶縁膜を介在させて、該感光絶縁膜の 光吸収特性に依り画面のコントラストを顕著に向上させる。そして、前記金属背 面電極を該感光絶縁膜上に延在する上部金属電極部分と、２次誘電層上の下部金 属電極部分とからなる２重構造に形成し、該上部金属電極を前記２次誘電層上に 介在させた前記感光絶縁膜に依り蛍光層から所定距離だけ離間させる。よって上 部金属電極には、高い電場が直接かかることなく継続的に電気が通ずるようにな るので、従来のように背面電極の各電極全体が作動しないような現象が排除され た薄膜電子ルミネセンス表示素子が得られる。 According to the present invention, there is good insulation and light absorption between the metal back electrode and the secondary dielectric layer. By interposing a photosensitive insulating film that is suitable and has extremely low affinity for moisture, Significantly improves screen contrast due to its light absorption properties. And the metal back A surface electrode is formed by an upper metal electrode portion extending on the photosensitive insulating film and a lower metal electrode portion on the secondary dielectric layer. The upper metal electrode is formed into a double structure consisting of a metal electrode portion, and the upper metal electrode is placed on the secondary dielectric layer. The phosphor layer is separated from the phosphor layer by a predetermined distance due to the interposed photosensitive insulating film. Therefore, above Electricity can be continuously passed through the metal electrode without directly applying a high electric field. This eliminates the phenomenon in which the entire back electrode does not operate as in the past. A thin film electroluminescent display element is obtained.
【００１１】[0011]
以下、本考案による薄膜電子ルミネセンス表示素子を参考図面を用いて詳細に 説明する。図１は、本考案による薄膜電子ルミネセンス表示素子の構成を示した 一部斜視図で、図面に示したように、Ｎa イオンが排除された硝子基板（10）上 に、ITO による透明電極群（11）を、約2000Åの厚さにコーティングし、線電極 形式にフォトエッチングさせる。該透明電極群（11）上面部に、Y2O5又はAl2O3 の１次誘電層（12）を約3000Åの厚さに真空蒸着し、該１次誘電層（12）の上面 部にＭn を１wt％以下にドーピングした ZnS蛍光層（13）を約6000Åの厚さに真 空蒸着させる。該 ZnS蛍光層（13）の上面部にY2O3又はAl2O3 の２次誘電層（14 ）を真空蒸着し、感光絶縁膜（15）をその２次誘電層（14）上面部に10μｍ以下 の厚さを有するようにコーティングし、 150〜 300μｍの幅にストリップ状にな るようにフォトエッチングする。感光絶縁膜（15）は感光性ポリイミド（東レ（ 株）製品：Photoneece UR−3100シリーズ）を用いた。Hereinafter, the thin film electroluminescent display device according to the present invention will be described in detail with reference to the drawings. Figure 1 is a partial perspective view showing the configuration of a thin film electroluminescent display element according to the present invention. As shown in the drawing, a group of transparent electrodes made of ITO is placed on a glass substrate (10) from which Na ions have been (11) was coated to a thickness of about 2000 Å and photoetched into a line electrode format. A primary dielectric layer (12) of Y 2 O 5 or Al 2 O 3 is vacuum-deposited to a thickness of about 3000 Å on the upper surface of the transparent electrode group (11). Then, a ZnS fluorescent layer (13) doped with Mn to less than 1 wt% is vacuum deposited to a thickness of about 6000 Å. A secondary dielectric layer (14) of Y 2 O 3 or Al 2 O 3 is vacuum deposited on the upper surface of the ZnS fluorescent layer (13), and a photosensitive insulating film (15) is applied to the upper surface of the secondary dielectric layer (14). The film is coated to a thickness of 10 μm or less, and photo-etched to form a strip with a width of 150 to 300 μm. The photosensitive insulating film (15) was made of photosensitive polyimide (Toray Industries, Inc. product: Photoneece UR-3100 series).
【００１２】 このように形成された前記感光絶縁膜（15）上と、前記２次誘電層（14）の上 面部位に、それぞれ上部及び下部金属電極（16′)(16”）を有する金属背面電極 群（16）を所定厚さ（ｄ）に蒸着し、該上部金属電極（16′）の上面部長手方向 に該上部金属電極（16′）幅の50〜90％程度をエッチングして電極を分離するこ とにより該上部金属電極（16′）を形成する。符号17がその上部金属電極（16′ ）の上面部のエッチングされた部位を示す。0012 On the thus formed photosensitive insulating film (15) and on the secondary dielectric layer (14). Metal back electrode with upper and lower metal electrodes (16′)(16”) on the front side, respectively The group (16) is deposited to a predetermined thickness (d), and the top surface of the upper metal electrode (16') is evaporated in the longitudinal direction. 50 to 90% of the width of the upper metal electrode (16') is etched to separate the electrodes. This forms the upper metal electrode (16'). The symbol 17 is the upper metal electrode (16′ ) shows the etched area on the top surface.
【００１３】 前記の感光絶縁膜（15）は、表示素子のコントラストを向上させるために、絶 縁性及び光吸収性が良く、薄膜電子ルミネセンス表示素子に悪影響を及ぼす水分 の侵入を防ぐために水分との親和力が極めて低い材料を使用する。 又、外部に露出される金属背面電極群（16）は、Ａl ，Ｔi ，Ｙ，Ｍg のよう な金属により形成され、その厚さ（ｄ）が2000Å以下になる場合は、ピンホール 形態の破損が生じ易いため、金属背面電極群（16）の厚さ（ｄ）は、約2000Å程 度が適合である。[0013] The photosensitive insulating film (15) is an insulating film in order to improve the contrast of the display element. Moisture has good affinity and light absorption, and has a negative effect on thin film electroluminescent display elements. To prevent the intrusion of water, use materials with extremely low affinity for moisture. In addition, the metal back electrode group (16) exposed to the outside is made of Al, Ti, Y, Mg, etc. If the thickness (d) is less than 2000 Å, it is considered a pinhole. The thickness (d) of the metal back electrode group (16) should be approximately 2000 Å because the shape is likely to be damaged. degree is suitable.
【００１４】 このように構成される本考案の電子ルミネセンス表示素子は、前記透明電極群 （11）と前記金属背面電極群（16）との間に 100〜 200ＶのＡＣ電源を印加させ ると、それら各電極群（11)(16）が相互交叉される部位で発光をするようになる 。この時、前記蛍光膜（13）にあるピンホール欠陥部位により、ピンホール形態 の破損が生ずるような場合にその現象が金属背面電極群（16）下部位から発生さ れると、その部位では相当高い電場がかかってそのピンホール欠陥部位に電気的 破損が生ずることがある。しかるに従来の電極構造においては、このような破損 が生ずる場合に、その電極部位の周囲を漏電領域のプラスマ放電により漸次溶解 させるようになって漏電破損が生じ、直ちにその電極自体が消耗されて、線電極 の作動が停止されるようになる。しかし、本考案による電子ルミネセンス表示素 子においては、金属背面電極群（16）の下部金属電極（16”）が発光膜で発生さ れるピンホールに依り、破壊されても上部金属電極（16′）は、感光絶縁膜（15 ）に依り、蛍光層（13）から所定距離だけ離れているため、高い電場がかかるこ とがなくなり金属背面電極群としては継続的に電気が通ずるようになる。従って 、従来のように金属背面電極群（16）全体が作動し得ない電極破損現象が発生し ない。すなわち、金属背面電極群（16）の上部金属電極（16′）には、ピンホー ル形態の完全な電極破損が生ずる憂慮がない。尚、下部金属電極（16”）から発 生される欠損領域は、その半径が 0.001in以下になるため、部分的な欠損は人間 の肉眼では殆んど感知し得ず、従って出力画面には殆んど影響を与えない。[0014] The electroluminescence display element of the present invention configured as described above has the above-mentioned transparent electrode group. An AC power source of 100 to 200 V is applied between (11) and the metal back electrode group (16). Then, each electrode group (11)(16) starts to emit light at the point where they intersect with each other. . At this time, the pinhole shape is caused by the pinhole defect site in the fluorescent film (13). If damage occurs, the phenomenon occurs from the lower part of the metal back electrode group (16). When the pinhole defect occurs, a fairly high electric field is applied to that area, causing an electrical charge to the pinhole defect area. Damage may occur. However, in the conventional electrode structure, such damage If this occurs, the area around the electrode is gradually dissolved by plasma discharge in the leakage area As a result, leakage damage occurs, and the electrode itself is immediately consumed, causing the wire electrode to operation will be stopped. However, the electroluminescent display element according to the present invention In this case, the lower metal electrode (16”) of the metal back electrode group (16) is generated in the luminescent film. Even if the upper metal electrode (16') is destroyed due to the pinhole caused by the photosensitive insulating film (15' ), it is a certain distance away from the fluorescent layer (13), so a high electric field may not be applied to it. As a result, electricity continues to flow through the metal back electrode group. Therefore , an electrode breakage phenomenon occurred in which the entire metal back electrode group (16) could not operate as in the conventional case. do not have. In other words, the upper metal electrode (16') of the metal back electrode group (16) has a pinhole. There is no concern that complete electrode failure will occur in the form of a wire. In addition, the light emitted from the lower metal electrode (16”) The radius of the resulting defect area is less than 0.001in, so partial defects are difficult for humans to achieve. It is almost imperceptible to the naked eye and therefore has almost no effect on the output screen.
【００１５】 又、誘電体と電極の厚さを適切に調節させることにより、表示素子の使用寿命 を向上させ且つ感光絶縁膜の光吸収特性により画面のコントラストをより向上す ることができる。[0015] In addition, by appropriately adjusting the thickness of the dielectric and electrode, the service life of the display element can be extended. It also improves the contrast of the screen due to the light absorption properties of the photosensitive insulating film. can be done.
【００１６】[0016]
以上説明したように、本考案による薄膜電子ルミネセンス表示素子は、金属背 面電極を、上部金属電極と下部金属電極の２重構造に成すことにより、ピンホー ル形態の破損に依る完全な電極破損を防止し得るため、表示素子の使用寿命を向 上し得る効果がある。又、従来のように、電子ルミネセンス表示板全体が電気的 破損現象をおこさないので、長時間安定した駆動により表示素子の信頼性が向上 され、高い印加電圧下においても表示素子には大した損傷を与えずに高い画面の コントラストを維持する効果がある。 As explained above, the thin film electroluminescent display device according to the present invention has a metal backing. By forming the surface electrode into a double structure of an upper metal electrode and a lower metal electrode, pinhole This prevents complete electrode damage due to damage to the electrode structure, thereby extending the service life of the display element. It has a positive effect. In addition, unlike conventional displays, the entire electroluminescent display board is electrically Since no damage occurs, the reliability of display elements is improved through stable operation over long periods of time. Even under high applied voltage, it is possible to maintain high screen sizes without causing major damage to the display element. It has the effect of maintaining contrast.
【図１】本考案による薄膜電子ルミネセンス表示素子の
構成を示した斜視図である。FIG. 1 is a perspective view showing the structure of a thin film electroluminescent display device according to the present invention.
【図２】従来の薄膜電子ルミネセンス表示素子の構成を
示した斜視図である。FIG. 2 is a perspective view showing the structure of a conventional thin film electroluminescent display element.
10…硝子基板 11…透明電極群 12…１次誘電層 13…蛍光層 14…２次誘電層 15…感光絶縁膜 16…金属背面電極群 16′…上部金属電極 16”…下部金属電極 17…エッチング部 10...Glass substrate 11...Transparent electrode group 12...Primary dielectric layer 13...Fluorescent layer 14…Secondary dielectric layer 15...Photosensitive insulation film 16…Metal back electrode group 16′...Top metal electrode 16”…lower metal electrode 17...Etched part
Claims (3)
1）、１次誘電層（12）、蛍光層（13）、２次誘電層（1
4）を順次形成してなる薄膜電子ルミネセンス表示素子
において、前記２次誘電層（14）の上面部に絶縁性及び
光吸収性で且つ水分との親和力が極めて低い感光絶縁膜
（15）を所定パターンに形成し、該感光絶縁膜（15）の
上面から前記２次誘電層（14）の上面にまたがるそれぞ
れ上部金属電極（16′）と下部金属電極（16”）とを有
する金属背面電極群（16）を形成して成ることを特徴と
する薄膜電子ルミネセンス表示素子。[Claim 1] A transparent electrode group (10) is disposed on a glass substrate (10).
1), primary dielectric layer (12), fluorescent layer (13), secondary dielectric layer (1)
4), in which a photosensitive insulating film (15) is provided on the upper surface of the secondary dielectric layer (14), having an insulating and light-absorbing property and having an extremely low affinity for moisture. a metal back electrode formed in a predetermined pattern and having an upper metal electrode (16') and a lower metal electrode (16'') extending from the upper surface of the photosensitive insulating film (15) to the upper surface of the secondary dielectric layer (14); A thin film electroluminescent display element characterized by forming a group (16).
幅 150〜 300μｍの線状パターンに形成された特許請求
の範囲第１項記載の薄膜電子ルミネセンス表示素子。[Claim 2] The photosensitive insulating film (15) has a thickness of 10 μm or less,
The thin film electroluminescent display element according to claim 1, which is formed into a linear pattern having a width of 150 to 300 μm.
（16′）の上面部長手方向に該上部金属電極（16′）の
幅の約50〜90％をエッチングして形成された特許請求の
範囲第１項又は第２項記載の薄膜電子ルミネセンス表示
素子。[Claim 3] The upper metal electrode (16') is formed by etching approximately 50 to 90% of the width of the upper metal electrode (16') in the longitudinal direction of the upper surface of the upper metal electrode (16'). A thin film electroluminescent display element according to claim 1 or 2.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR7455/1986 | 1986-09-06 | ||
| KR1019860007455A KR900001405B1 (en) | 1986-09-06 | 1986-09-06 | Thin film el display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04102195U true JPH04102195U (en) | 1992-09-03 |
Family
ID=19252141
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62222154A Pending JPS63108698A (en) | 1986-09-06 | 1987-09-07 | Thin film electroluminescence display device |
| JP1991027543U Pending JPH04102195U (en) | 1986-09-06 | 1991-04-22 | Thin film electroluminescent display element |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62222154A Pending JPS63108698A (en) | 1986-09-06 | 1987-09-07 | Thin film electroluminescence display device |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JPS63108698A (en) |
| KR (1) | KR900001405B1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS519577A (en) * | 1974-06-12 | 1976-01-26 | Siemens Ag | Handotaisochino seizohoho |
| JPS60154623A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60185395A (en) * | 1984-03-02 | 1985-09-20 | 日産自動車株式会社 | Thin film el element |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57100468A (en) * | 1980-12-15 | 1982-06-22 | Fujitsu Ltd | El display element |
| JPS6074290A (en) * | 1983-09-24 | 1985-04-26 | ホ−ヤ株式会社 | Thin film el element |
| JPS60247947A (en) * | 1984-05-23 | 1985-12-07 | Hitachi Ltd | Manufacture of semiconductor device |
-
1986
- 1986-09-06 KR KR1019860007455A patent/KR900001405B1/en not_active IP Right Cessation
-
1987
- 1987-09-07 JP JP62222154A patent/JPS63108698A/en active Pending
-
1991
- 1991-04-22 JP JP1991027543U patent/JPH04102195U/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS519577A (en) * | 1974-06-12 | 1976-01-26 | Siemens Ag | Handotaisochino seizohoho |
| JPS60154623A (en) * | 1984-01-25 | 1985-08-14 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS60185395A (en) * | 1984-03-02 | 1985-09-20 | 日産自動車株式会社 | Thin film el element |
Also Published As
| Publication number | Publication date |
|---|---|
| KR900001405B1 (en) | 1990-03-09 |
| JPS63108698A (en) | 1988-05-13 |
| KR880004585A (en) | 1988-06-07 |
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