KR880004140A - 결정성장방법 - Google Patents

결정성장방법 Download PDF

Info

Publication number
KR880004140A
KR880004140A KR870010392A KR870010392A KR880004140A KR 880004140 A KR880004140 A KR 880004140A KR 870010392 A KR870010392 A KR 870010392A KR 870010392 A KR870010392 A KR 870010392A KR 880004140 A KR880004140 A KR 880004140A
Authority
KR
South Korea
Prior art keywords
magnetic field
solution
crystal growth
growth method
container
Prior art date
Application number
KR870010392A
Other languages
English (en)
Other versions
KR970007427B1 (ko
Inventor
야스노리 오쿠보
도시히코 스즈키
노부유키 이자와
Original Assignee
오가 노리오
소니 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 오가 노리오, 소니 가부시키가이샤 filed Critical 오가 노리오
Publication of KR880004140A publication Critical patent/KR880004140A/ko
Application granted granted Critical
Publication of KR970007427B1 publication Critical patent/KR970007427B1/ko

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917—Magnetic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

내용 없음

Description

결정성장방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본원 발명 방법의 설명을 위한 결정성장 장치의 구성도.
제2도는 본원 발명 방법을 실시하는 자장 발생수단의 전원부의 일례의 블록도.
제3도는 전류맥동율에 대한 결정결합밀도의 측정곡선도.

Claims (1)

  1. 결정성장 원료용액을 수용하는 용기와, 이 용기의 주위에 배설된 가열수단과, 상기 용액에 소정 방향의 자장(磁場)을 인가하는 전자석에 의한 자장발생수단과, 상기 용액에서 결정을 성장시키는 수단을 설치하고, 상기 자장발생수단에 맥동율이 5%이하의 직류 전류를 공급하여 소정 방향 자장을 인가시키면서, 상기 용액에서 결정성장을 행하는 것을 특징으로 하는 결정성장방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019870010392A 1986-09-25 1987-09-19 결정성장방법 KR970007427B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP61227027A JPS6385087A (ja) 1986-09-25 1986-09-25 結晶成長方法
JP86-227027 1986-09-25
JP227027 1986-09-25

Publications (2)

Publication Number Publication Date
KR880004140A true KR880004140A (ko) 1988-06-01
KR970007427B1 KR970007427B1 (ko) 1997-05-08

Family

ID=16854367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019870010392A KR970007427B1 (ko) 1986-09-25 1987-09-19 결정성장방법

Country Status (5)

Country Link
US (1) US4849065A (ko)
JP (1) JPS6385087A (ko)
KR (1) KR970007427B1 (ko)
DE (1) DE3732250C2 (ko)
IT (1) IT1211796B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2623390B2 (ja) * 1991-03-22 1997-06-25 信越半導体株式会社 シリコン単結晶棒の成長方法
JP2567539B2 (ja) * 1992-01-30 1996-12-25 信越半導体株式会社 Ｆｚ法シリコン単結晶棒の成長方法及び装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3317819A (en) * 1963-10-03 1967-05-02 Earle C Brodie Electronic hum and ripple filter
US3550030A (en) * 1968-11-29 1970-12-22 Abex Corp Transient regulation of direct current electrical power supplies
US3551780A (en) * 1968-12-05 1970-12-29 Lambda Electronics Corp Electronic ripple filter
US3710148A (en) * 1970-08-31 1973-01-09 Hitachi Ltd Ripple eliminating circuit
US3859590A (en) * 1973-07-30 1975-01-07 Ibm Waveform averaging rc circuit
GB2059932B (en) * 1979-09-20 1983-10-12 Sony Corp Solidification processes
US4393441A (en) * 1981-07-17 1983-07-12 Enge Harald A High voltage power supply
JPS5850951A (ja) * 1981-09-22 1983-03-25 セイコーエプソン株式会社 歯列矯正用ブラケツト
JPS6027682A (ja) * 1983-07-26 1985-02-12 Toshiba Corp 単結晶引上装置
US4565671A (en) * 1983-08-05 1986-01-21 Kabushiki Kaisha Toshiba Single crystal manufacturing apparatus
JPS6051690A (ja) * 1983-08-31 1985-03-23 Toshiba Corp 単結晶の製造装置
JPS60180990A (ja) * 1984-02-24 1985-09-14 Sumitomo Metal Ind Ltd 結晶成長方法
JPS60155595A (ja) * 1984-08-06 1985-08-15 Sony Corp 結晶の成長方法

Also Published As

Publication number Publication date
JPS6385087A (ja) 1988-04-15
IT8748412A0 (it) 1987-09-23
DE3732250A1 (de) 1988-03-31
JPH0559875B2 (ko) 1993-09-01
IT1211796B (it) 1989-11-03
KR970007427B1 (ko) 1997-05-08
DE3732250C2 (de) 1997-08-07
US4849065A (en) 1989-07-18

Similar Documents

Publication Publication Date Title
DE68928090D1 (de) Vorrichtung zum Bestrahlen eines Gewebes mit einem magnetischen Feld
ATE12348T1 (de) Verfahren zur herstellung von lipid-vesikeln durch ultraschallbehandlung, anwendung des verfahrens und vorrichtung zur durchfuehrung des verfahrens.
EP0338411A3 (en) Apparatus and method for growth of large single crystals in plate/slab form
DE3483496D1 (de) Schwimmender magnetruehrer mit fuehrungseinrichtungen.
DE68916598D1 (de) Flüssigkeitsbehandlungsvorrichtung zur Verhütung und/oder Entfernung von Kesselsteinablagerungen.
KR870004498A (ko) 실리콘 기판의 제법
NO902066D0 (no) Fremgangsmaate og apparat for aa bestemme gjenvaerende fluidinnhold i en beholder.
AU590490B3 (en) Apparatus for controlling protistal growth in hydrocarbon distillate
DE69117290D1 (de) Mikrowellenbehandlung
KR880004140A (ko) 결정성장방법
DE3579080D1 (de) Verfahren zur herstellung eines kristallinen koerpers aus der schmelze.
KR890002389A (ko) 배양방법 및 배양장치
ATE80325T1 (de) Mischungsgeraet und -verfahren.
FR2474318B1 (ko)
DE69218338T2 (de) Apparat zur Kontrolle des Leistungsverbrauches von GaAs-Feldeffekttransistoren
KR880701452A (ko) Ac 전류에 의해, 에너지화 되어 두 부분의 계합을 일으켜서 전자석을 제어하는 장치 및 그 방법
DE69607025D1 (de) System zur behandlung von gasen und fluids mit pulsierender koronaentladung
AU7146796A (en) A method and a device for treating a liquid egg product
DE3884121D1 (de) Gerät zur Stromversorgung eines Motorantriebes einschliesslich Regelschleife für den Schaltregler.
JPS6487592A (en) Single crystal growing device
DE69329908T2 (de) Gerät zur gepulsten magnetischen induktion
JPS5228258A (en) Method for growth of crystals from liquid phase
KR910018587A (ko) LiNbO₃ 단결정의 단일 분역화 방법
KR910008812A (ko) GaAs 단결정 성장시 단결정 확보를 위한 As증기압 제어방법
KR930002550A (ko) LiTaO_3 단결정의 단일분역화 방법

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
AMND Amendment
E601 Decision to refuse application
J2X1 Appeal (before the patent court)

Free format text: APPEAL AGAINST DECISION TO DECLINE REFUSAL

G160 Decision to publish patent application
B701 Decision to grant
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20110718

Year of fee payment: 15

EXPY Expiration of term