KR870005475A - Manufacturing method of constant voltage diode - Google Patents

Manufacturing method of constant voltage diode Download PDF

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Publication number
KR870005475A
KR870005475A KR1019850008842A KR850008842A KR870005475A KR 870005475 A KR870005475 A KR 870005475A KR 1019850008842 A KR1019850008842 A KR 1019850008842A KR 850008842 A KR850008842 A KR 850008842A KR 870005475 A KR870005475 A KR 870005475A
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KR
South Korea
Prior art keywords
constant voltage
voltage diode
manufacturing
type
diffused
Prior art date
Application number
KR1019850008842A
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Korean (ko)
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KR880001793B1 (en
Inventor
유상전
Original Assignee
허신구
주식회사 금성사
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Application filed by 허신구, 주식회사 금성사 filed Critical 허신구
Priority to KR1019850008842A priority Critical patent/KR880001793B1/en
Publication of KR870005475A publication Critical patent/KR870005475A/en
Application granted granted Critical
Publication of KR880001793B1 publication Critical patent/KR880001793B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

내용 없음No content

Description

정전압 다이오드의 제작방법Manufacturing method of constant voltage diode

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 정전압 다이오드의 제작 공정도.2 is a manufacturing process diagram of a constant voltage diode according to the present invention.

Claims (1)

n+형 매몰층 및 n형 에피텍셜층을 형성한 웨이퍼에 정전압 다이오드를 제작함에 있어서, 분리확산공정시 p+형을 매몰층까지 분리 확산시킨 후 그 상부에 베이스 공정시 p형을 확산하고, 에미터 공정시 n+형을 확산시켜 제작함을 특징으로 하는 정전압 다이오드의 제작방법.In fabricating a constant voltage diode on a wafer on which an n + type buried layer and an n type epitaxial layer are formed, the p + type is separated and diffused to the buried layer during the separation diffusion process, and then the p type is diffused on the upper part of the base process. Method of manufacturing a constant voltage diode, characterized in that the n + type diffused during the emitter process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019850008842A 1985-11-26 1985-11-26 Zener diodes KR880001793B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019850008842A KR880001793B1 (en) 1985-11-26 1985-11-26 Zener diodes

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019850008842A KR880001793B1 (en) 1985-11-26 1985-11-26 Zener diodes

Publications (2)

Publication Number Publication Date
KR870005475A true KR870005475A (en) 1987-06-09
KR880001793B1 KR880001793B1 (en) 1988-09-17

Family

ID=19243834

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019850008842A KR880001793B1 (en) 1985-11-26 1985-11-26 Zener diodes

Country Status (1)

Country Link
KR (1) KR880001793B1 (en)

Also Published As

Publication number Publication date
KR880001793B1 (en) 1988-09-17

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