KR860006835A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

Info

Publication number
KR860006835A
KR860006835A KR1019860000755A KR860000755A KR860006835A KR 860006835 A KR860006835 A KR 860006835A KR 1019860000755 A KR1019860000755 A KR 1019860000755A KR 860000755 A KR860000755 A KR 860000755A KR 860006835 A KR860006835 A KR 860006835A
Authority
KR
South Korea
Prior art keywords
substrate
semiconductor device
manufacturing
light
thin film
Prior art date
Application number
KR1019860000755A
Other languages
Korean (ko)
Other versions
KR900001237B1 (en
Inventor
히또시 이또오
히또시 이또오 (외 1)
다까히꼬 모리야
Original Assignee
가부시끼가이샤 도오시바
사바 쇼오이찌
가부시끼 가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바, 사바 쇼오이찌, 가부시끼 가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바
Publication of KR860006835A publication Critical patent/KR860006835A/en
Application granted granted Critical
Publication of KR900001237B1 publication Critical patent/KR900001237B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/38—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions
    • H01L21/383—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

내용 없음No content

Description

반도체 장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 방법을 위한 화학적 기상성장장치의 개요도. 제4도의 (a) 및 (b)는 본 발명의 제2실시예에 따른 박막 형성공정을 나타낸 도면. 제5도는 본 발명의 제3실시예에 따른 박막형성공정을 나타낸 도면.2 is a schematic diagram of a chemical vapor growth apparatus for the method of the present invention. (A) and (b) of FIG. 4 show a thin film forming process according to a second embodiment of the present invention. 5 is a view showing a thin film forming process according to a third embodiment of the present invention.

Claims (8)

화학적인 기상성장법으로 기판상에다 박막을 형성시키는 반도체장치의 제조방법에 있어서, 상기 기판상에다가 파장이 400nm∼1000nm인 빛을 조사하도록 한 것을 특징으로 하는 반도체장치의 제조방법.A method of manufacturing a semiconductor device in which a thin film is formed on a substrate by chemical vapor deposition, wherein the light having a wavelength of 400 nm to 1000 nm is applied to the substrate. 제1항에 있어서, 빛을 조사하여서 형성시키게 되는 박막은 고융점 금속에 대해 선택적인 CVD법을 실시하여서 만들어지는 것이고, 광조사는 기판의 이면측으로부터 행하는 것이며, 여기에 사용되는 빛은 기판을 투과하는 한편 기판표면중에 막을 형성시키지 않는 영역을 덮고 있는 피막은 투과하지 않도록 된 파장영역으로 되어 있는 것을 특징으로 하는 반도체 장치의 제조방법.The thin film formed by irradiating with light is made by performing a selective CVD method on a high melting point metal, and light irradiation is performed from the back side of the substrate, and the light used here A method of manufacturing a semiconductor device, characterized in that the coating is a wavelength region in which the film covering the area on which the film does not form on the surface of the substrate is not transmitted. 제1항에 있어서, 광조사가 기판의 표면측으로부터 행해지도록 된 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein light irradiation is performed from the surface side of the substrate. 제1항에 있어서, 광조사가 기판의 표면 및 이면측으로부터 행해지고, 이때에 양쪽에서 조사되는 빛은 각기 다른 파장으로 되어 있는 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein light irradiation is carried out from the front and back sides of the substrate, wherein light irradiated from both sides has different wavelengths. 제1항 내지 제4항중 어느 한 항에 있어서, 박막이 텅스텐이나 몰리브덴 같은 고융점 금속인 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to any one of claims 1 to 4, wherein the thin film is a high melting point metal such as tungsten or molybdenum. 제1항에 있어서, 박막은 접속공과 같은 단차가 있는 기판 표면에 형성되는 것이고, 광조사는 기판의 이면측으로부터 행해지며, 빛은 기판의 凹부에만 도달하도록 된 것을 특징으로 하는 반도체장치의 제조방법.The semiconductor device according to claim 1, wherein the thin film is formed on a surface of a substrate having a step such as a connection hole, and light irradiation is made from the back side of the substrate, and light reaches only the concave portion of the substrate. Way. 제6항에 있어서, 광조사가 기판의 표면측으로부터도 행해지는 것을 특징으로 하는 반도체 장치의 제조방법.7. The method of manufacturing a semiconductor device according to claim 6, wherein light irradiation is also performed from the surface side of the substrate. 제1항에 있어서, 박막이 2산화 실리콘막인 것을 특징으로 하는 반도체장치의 제조방법.The method of manufacturing a semiconductor device according to claim 1, wherein the thin film is a silicon dioxide film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019860000755A 1985-02-28 1986-02-04 Semiconductor device manufacturing method KR900001237B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP60-39425 1985-02-28
JP60039425A JPS61198733A (en) 1985-02-28 1985-02-28 Method of forming thin-film
JP60-39427 1985-02-28

Publications (2)

Publication Number Publication Date
KR860006835A true KR860006835A (en) 1986-09-15
KR900001237B1 KR900001237B1 (en) 1990-03-05

Family

ID=12552634

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860000755A KR900001237B1 (en) 1985-02-28 1986-02-04 Semiconductor device manufacturing method

Country Status (2)

Country Link
JP (1) JPS61198733A (en)
KR (1) KR900001237B1 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01238024A (en) * 1988-03-17 1989-09-22 Koujiyundo Kagaku Kenkyusho:Kk Manufacture of oxide film for semiconductor device
JP4592373B2 (en) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 Method for forming conductive molybdenum nitride gate electrode film

Also Published As

Publication number Publication date
KR900001237B1 (en) 1990-03-05
JPS61198733A (en) 1986-09-03

Similar Documents

Publication Publication Date Title
KR930022602A (en) Thin film formation method
KR940006285A (en) Thin film type semiconductor device and manufacturing method thereof
KR970024397A (en) Laser annealing method and laser annealing device
KR840002159A (en) Manufacturing method of single crystal film
KR950007032A (en) Method for forming insulating layer of semiconductor device and apparatus for forming same
KR970054585A (en) Nitride group III-V compound semiconductor device and its manufacturing method
KR900001003A (en) Manufacturing Method of Semiconductor Device
KR860006835A (en) Manufacturing Method of Semiconductor Device
KR880013278A (en) Semiconductor laser device and manufacturing method thereof
KR900000985A (en) Manufacturing Method of Semiconductor Device
KR940027081A (en) Manufacturing Method of Semiconductor Device
KR860007722A (en) Improved insulating film processing method and wafer and integrated circuit manufactured according to the processing method
JPS5623781A (en) Semiconductor device
PT95436A (en) PRODUCTION PROCESS OF A DEPOSITED MOVIE AND PRODUCTION OF A SEMICONDUCTOR DEVICE
TW344128B (en) Process for producing semiconductor device
KR960026428A (en) Method of manufacturing thin film transistor
KR910016046A (en) Semiconductor device manufacturing method
KR910010625A (en) Manufacturing Method of Semiconductor Device
JPS5898933A (en) Manufacture of semiconductor device
KR970027376A (en) Method and apparatus for forming polycrystalline silicon
KR970003486A (en) Contact manufacturing method of semiconductor device
EP0248883A1 (en) Selective deposition process.
KR920020637A (en) Method of forming high quality insulating film using excimer laser
JPS5766650A (en) Manufacture of semiconductor device
Micheli et al. Laser microfabrication of thin films: Part one

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 19930302

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee