KR970003486A - Contact manufacturing method of semiconductor device - Google Patents
Contact manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR970003486A KR970003486A KR1019950017483A KR19950017483A KR970003486A KR 970003486 A KR970003486 A KR 970003486A KR 1019950017483 A KR1019950017483 A KR 1019950017483A KR 19950017483 A KR19950017483 A KR 19950017483A KR 970003486 A KR970003486 A KR 970003486A
- Authority
- KR
- South Korea
- Prior art keywords
- contact
- semiconductor device
- metal atom
- manufacturing
- rays
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체소자의 콘택 제조방법에 관한 것으로, 특히 반도체 기판상에 형성된 콘택홀내에 금속원자를 증착할 시, 금속원자에 자외선이나 X선 또는 레이저 광과 같은 단파장의 광자를 비추어 줌으로써 금속원자의 균일한 확산성과 빠른 표면 확산 유동도를 얻게하여 콘택홀 채움의 정도 및 균일성을 향상시키는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact of a semiconductor device. In particular, when depositing a metal atom in a contact hole formed on a semiconductor substrate, the metal atom is exposed to a photon having a short wavelength such as ultraviolet rays, X-rays, or laser light. It is a technology to improve the degree and uniformity of contact hole filling by obtaining uniform diffusivity and fast surface diffusion flow rate.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2도는 본 발명의 방법에 따른 콘택 제조시의 상태를 도시한 도면.2 shows a state at the time of contact manufacture in accordance with the method of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017483A KR970003486A (en) | 1995-06-26 | 1995-06-26 | Contact manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950017483A KR970003486A (en) | 1995-06-26 | 1995-06-26 | Contact manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970003486A true KR970003486A (en) | 1997-01-28 |
Family
ID=66524313
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950017483A KR970003486A (en) | 1995-06-26 | 1995-06-26 | Contact manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970003486A (en) |
-
1995
- 1995-06-26 KR KR1019950017483A patent/KR970003486A/en not_active Application Discontinuation
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4615904A (en) | Maskless growth of patterned films | |
US4451503A (en) | Photo deposition of metals with far UV radiation | |
KR910002020A (en) | Compound Semiconductor Device and Surface Treatment Processing Method | |
TW350135B (en) | Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same | |
EP0110882A1 (en) | Maskless growth of patterned films | |
DE69940640D1 (en) | HE DIFFUSION BARRIER LAYER OF RUTHENIUM SILICIDE | |
KR960023223A (en) | Treatment method of metal nitride film to reduce silicon migration | |
KR950703789A (en) | Anti-reflection layer and lithographic patterning method (ANTIREFLEC LAYER AND PROCESS FOR LITHOGRAPHICALLY STRUCTRUING SUCH A LAYER) | |
KR960019584A (en) | Improved titanium nitride layer deposited by chemical vapor deposition and method of manufacturing the same | |
KR850003455A (en) | Manufacturing method of organic thin film | |
KR900702075A (en) | Photochemical Deposition of High Purity Gold Thin Films | |
JP2000100811A5 (en) | ||
KR970003486A (en) | Contact manufacturing method of semiconductor device | |
KR860006835A (en) | Manufacturing Method of Semiconductor Device | |
KR910010625A (en) | Manufacturing Method of Semiconductor Device | |
KR920005253A (en) | Pattern forming method of semiconductor device and apparatus therefor | |
Escobar-Alarćon et al. | Thermoluminescent response of carbon nitride thin films deposited by laser ablation | |
JP3110472B2 (en) | Selective metal deposition method | |
KR960002670A (en) | Diffuse reflection film deposition method of semiconductor device | |
Osgood Jr et al. | Laser microchemistry for direct writing of microstructures | |
KR910013437A (en) | Manufacturing method of diffusion type semiconductor device | |
EP0248883A1 (en) | Selective deposition process. | |
KR940001279A (en) | Metal wiring formation method of semiconductor | |
KR970051880A (en) | Method of forming photoresist of semiconductor device | |
KR940002933A (en) | Ion doping method of TFT |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |