KR970003486A - Contact manufacturing method of semiconductor device - Google Patents

Contact manufacturing method of semiconductor device Download PDF

Info

Publication number
KR970003486A
KR970003486A KR1019950017483A KR19950017483A KR970003486A KR 970003486 A KR970003486 A KR 970003486A KR 1019950017483 A KR1019950017483 A KR 1019950017483A KR 19950017483 A KR19950017483 A KR 19950017483A KR 970003486 A KR970003486 A KR 970003486A
Authority
KR
South Korea
Prior art keywords
contact
semiconductor device
metal atom
manufacturing
rays
Prior art date
Application number
KR1019950017483A
Other languages
Korean (ko)
Inventor
김삼동
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950017483A priority Critical patent/KR970003486A/en
Publication of KR970003486A publication Critical patent/KR970003486A/en

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

본 발명은 반도체소자의 콘택 제조방법에 관한 것으로, 특히 반도체 기판상에 형성된 콘택홀내에 금속원자를 증착할 시, 금속원자에 자외선이나 X선 또는 레이저 광과 같은 단파장의 광자를 비추어 줌으로써 금속원자의 균일한 확산성과 빠른 표면 확산 유동도를 얻게하여 콘택홀 채움의 정도 및 균일성을 향상시키는 기술이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a contact of a semiconductor device. In particular, when depositing a metal atom in a contact hole formed on a semiconductor substrate, the metal atom is exposed to a photon having a short wavelength such as ultraviolet rays, X-rays, or laser light. It is a technology to improve the degree and uniformity of contact hole filling by obtaining uniform diffusivity and fast surface diffusion flow rate.

Description

반도세 소자의 콘택 제조방법.Method for manufacturing a contact of a semiconductor device.

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명의 방법에 따른 콘택 제조시의 상태를 도시한 도면.2 shows a state at the time of contact manufacture in accordance with the method of the present invention.

Claims (4)

반도체 소자의 콘택 제조방법에 있어서, 반도체 기판상에 형성된 콘택홀내에 금속원자를 증착할 시, 상기 금속원자에 단파장의 광자를 비추어 줌으로써 금속원자의 균일한 확산성과 빠른 표면 확산 유동도를 얻게하여 콘택홀 채움의 정도 및 균일성을 향상시키는 것을 특징으로 하는 반도체 소자의 콘택 제조방법.In the contact manufacturing method of a semiconductor device, when depositing a metal atom in a contact hole formed on a semiconductor substrate, by illuminating a short-wavelength photon to the metal atom to obtain a uniform diffusion and rapid surface diffusion flow of the metal atom contact A method of manufacturing a contact for a semiconductor device, characterized by improving the degree and uniformity of hole filling. 제1항에 있어서, 상기 단파장의 광자는 자외선이나 X선 또는 레이저 광 중의 어느 하나인 것을 특징으로 하는 반도체 소자의 콘택 제조방법.The method of manufacturing a contact of a semiconductor device according to claim 1, wherein the photons having a short wavelength are either ultraviolet light, X-rays or laser light. 제1항에 있어서, 상기 금속원자는 Al인 것을 특징으로 하는 반도체 소자의 콘택 제조방법.The method of claim 1, wherein the metal atom is Al. 제1항에 있어서, 상기 콘택홀내로 금속원자를 증착하는 방법은 기상증착법 또는 화학증착법으로 하는 것을 특징으로 하는 반도체 소자의 콘택 제조방법.The method of claim 1, wherein the deposition of the metal atoms into the contact holes is performed by vapor deposition or chemical vapor deposition. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950017483A 1995-06-26 1995-06-26 Contact manufacturing method of semiconductor device KR970003486A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950017483A KR970003486A (en) 1995-06-26 1995-06-26 Contact manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950017483A KR970003486A (en) 1995-06-26 1995-06-26 Contact manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970003486A true KR970003486A (en) 1997-01-28

Family

ID=66524313

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950017483A KR970003486A (en) 1995-06-26 1995-06-26 Contact manufacturing method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970003486A (en)

Similar Documents

Publication Publication Date Title
US4615904A (en) Maskless growth of patterned films
US4451503A (en) Photo deposition of metals with far UV radiation
KR910002020A (en) Compound Semiconductor Device and Surface Treatment Processing Method
TW350135B (en) Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same
EP0110882A1 (en) Maskless growth of patterned films
DE69940640D1 (en) HE DIFFUSION BARRIER LAYER OF RUTHENIUM SILICIDE
KR960023223A (en) Treatment method of metal nitride film to reduce silicon migration
KR950703789A (en) Anti-reflection layer and lithographic patterning method (ANTIREFLEC LAYER AND PROCESS FOR LITHOGRAPHICALLY STRUCTRUING SUCH A LAYER)
KR960019584A (en) Improved titanium nitride layer deposited by chemical vapor deposition and method of manufacturing the same
KR850003455A (en) Manufacturing method of organic thin film
KR900702075A (en) Photochemical Deposition of High Purity Gold Thin Films
JP2000100811A5 (en)
KR970003486A (en) Contact manufacturing method of semiconductor device
KR860006835A (en) Manufacturing Method of Semiconductor Device
KR910010625A (en) Manufacturing Method of Semiconductor Device
KR920005253A (en) Pattern forming method of semiconductor device and apparatus therefor
Escobar-Alarćon et al. Thermoluminescent response of carbon nitride thin films deposited by laser ablation
JP3110472B2 (en) Selective metal deposition method
KR960002670A (en) Diffuse reflection film deposition method of semiconductor device
Osgood Jr et al. Laser microchemistry for direct writing of microstructures
KR910013437A (en) Manufacturing method of diffusion type semiconductor device
EP0248883A1 (en) Selective deposition process.
KR940001279A (en) Metal wiring formation method of semiconductor
KR970051880A (en) Method of forming photoresist of semiconductor device
KR940002933A (en) Ion doping method of TFT

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E601 Decision to refuse application