KR840008534A - Continuous attaching method of high conductivity, high permeability film and apparatus thereof - Google Patents

Abstract

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Description

Continuous attaching method of high conductivity, high permeability film and apparatus thereof

Since this is an open matter, no full text was included.

1 is a fragmentary cross-sectional view of a photovoltaic device in which, in a preferred embodiment, each battery layer is formed by superimposing a plurality of p-i-n-type stacks formed of an amorphous semiconductor alloy,

2 is a perspective view of an apparatus for continuously attaching a light transmissive, electrically conductive layer onto a moving web of substrate,

3 is a cross-sectional view taken along line 3-3 of FIG. 2 illustrating a continuous attachment device of the present invention.

Claims (30)

A method of continuously depositing a light transmissive, electrically conductive thin film on a moving substrate, the chamber being vacuumed; Continuously sending a web of material substrate through the chamber; Providing a source of metal material; The metal material is evaporated in a vacuumed chamber, thereby producing metal vapor in a confined region between the substrate and the metal material; Supply new metal material when the metal material evaporates from the metal material source; Introducing oxygen gas into the area; Introducing an electromagnetic energy into the region to generate an ionized plasma from the introduced oxygen gas and the metal atom evaporated into the region, thereby suitable for continuously attaching the metal oxide film onto the moving substrate. 2. The method of claim 1 including supplying fresh oxygen gas as the oxygen gas reacts with the metal material, thereby maintaining a substantially constant oxygen partial pressure in the chamber. The method of claim 1 wherein the melting point of the metal material is less than 45 ° C. The method of claim 2 wherein the metal material is selected from the group consisting of indium, tin, cadmium, zinc and mixtures thereof. The method of claim 1 comprising heating the substrate to 150-400 ° C. The method of claim 5, wherein the substrate is heated to 150-300 ° C. to evaporate the indium-tin compound in the chamber, thereby continuously attaching the indium-tin compound onto the surface of the moving substrate. 7. The method of claim 6, wherein the cathode is a cathode adapted to supply electromagnetic energy to a high frequency power source adapted to excite cathode materials disposed within the region and to excite up to a frequency of about 13.56 MHz. The method of claim 6, wherein the pressure in the chamber is maintained at about 10 ⁻² to 10 ⁻⁴ torr. The method of claim 1 wherein the metal material is zinc and the substrate is maintained at room temperature. The method of claim 5, wherein the metal material is indium and the substrate is heated to less than about 300 ° C. 7. The method of claim 1 wherein the substrate comprises a semiconductor body at the top of which the metal oxide film adheres. The method of claim 11, wherein the semiconductor body consists of a plurality of amorphous semiconductor layers. Vacuum chamber; Heating means in the chamber; A metal material source effectively arranged for evaporation by the heating means; A substrate spaced from the metal material source; A vapor zone formed between the metal source and the substrate; Means for introducing oxygen into the vapor zone; An apparatus for continuously adhering a light transmissive, electrically conductive film onto a substrate, comprising means for introducing an electromagnetic source into the region to generate an ionized plasma from oxygen gas and metal atoms in the vapor region, the apparatus comprising: Means for continuously sending out; And a combination of means adapted to continuously attach a metal oxide film onto the moving substrate by continuously supplying the metal material as the metal material evaporates. The apparatus of claim 13 comprising means for freshly supplying oxygen when oxygen reacts with the metal material to maintain a substantially constant partial pressure of oxygen in the chamber. The apparatus of claim 13, wherein means are provided for heating the substrate. 14. An apparatus according to claim 13, comprising a plurality of spaced apart metallic materials adapted to be evaporated by heating means. The apparatus of claim 13 wherein the means for heating the metal material source is a resistance heater. The apparatus of claim 13 wherein the means for heating the source of metal material is an induction heater. The apparatus of claim 13 wherein the means for heating the metal material source is an electron beam. 14. The apparatus of claim 13, wherein the substrate is made of elongated web material and the means for continuously sending the substrate through the apparatus comprises a plurality of rollers and associated drives. 14. The apparatus of claim 13, wherein the means for newly supplying the metallic material comprises a storage hopper for storing the material and a conduit for transporting the material from the hopper to the source. 15. The method of claim 13, wherein the metal material is a relatively thin elongated wire, and means for newly supplying the metal material is a spool wound around the metal wire and a supply means adopted for sending the metal wire from the spool to the surface. A device that can continuously supply new metal materials. 14. The apparatus of claim 13, wherein the energy means comprises a negative electrode plate, the negative electrode plate moving at least one cathode hole through the vaporized valence vapor region of the metallic material. The apparatus of claim 13, wherein the chamber is maintained at 10 ⁻² to 10 ⁻⁵ torr. The apparatus of claim 13 wherein the metal material is selected from the group consisting of indium, cadmium, zinc and mixtures thereof. The device of claim 13, wherein the substrate on the surface of the metal oxide film adapted to be attached comprises a semiconductor body. The apparatus of claim 13, wherein the semiconductor body consists of a plurality of amorphous semiconductor bodies. The apparatus of claim 25, wherein the apparatus is formed from stainless steel. 27. An apparatus bond according to claim 25, wherein said apparatus is for forming a substrate from synthetic plastic resin. The apparatus of claim 25, wherein the substrate is formed from a glassy material. ※ Note: The disclosure is based on the initial application.