KR840004827A - Surface Polishing Method of Semiconductor Wafer - Google Patents

Surface Polishing Method of Semiconductor Wafer Download PDF

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Publication number
KR840004827A
KR840004827A KR1019830001712A KR830001712A KR840004827A KR 840004827 A KR840004827 A KR 840004827A KR 1019830001712 A KR1019830001712 A KR 1019830001712A KR 830001712 A KR830001712 A KR 830001712A KR 840004827 A KR840004827 A KR 840004827A
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KR
South Korea
Prior art keywords
blade
semiconductor wafer
free end
diamond abrasive
polishing
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Application number
KR1019830001712A
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Korean (ko)
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KR900001663B1 (en
Inventor
미쯔오 세끼야
Original Assignee
미쯔오 세끼야
디스코 가부시끼가이샤
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Publication of KR840004827A publication Critical patent/KR840004827A/en
Application granted granted Critical
Publication of KR900001663B1 publication Critical patent/KR900001663B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
    • B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
    • B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
    • B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D7/00—Bonded abrasive wheels, or wheels with inserted abrasive blocks, designed for acting otherwise than only by their periphery, e.g. by the front face; Bushings or mountings therefor
    • B24D7/02—Wheels in one piece

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)

Abstract

내용 없음No content

Description

반도체 웨이퍼의 표면 연마방법Surface Polishing Method of Semiconductor Wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 방법에 사용되는 연마 휠의 실시예를 도시한 단면도.1 is a cross-sectional view showing an embodiment of a polishing wheel used in the method of the present invention.

제2도는 본 발명의 방법에 사용되는 연마 휠의 다른 실시예를 도시한 단면도.2 is a cross-sectional view showing another embodiment of a polishing wheel used in the method of the present invention.

제3도는 제1도에 도시한 연마 휠의 날(blade)을 드레싱하는 방법의 실시예를 도시한 부분 단면도.FIG. 3 is a partial cross-sectional view showing an embodiment of a method of dressing the blade of the abrasive wheel shown in FIG.

Claims (22)

고성능의 연마제가 접착된 회전날도 반도체웨이퍼의 표면을 연마하기 위한 방법에 있어서, 웨이퍼 표면을 연마하기 전에 알런덤형 연마제가 접착된 드레서로 상기 회전날을 연마하는데 의해 상기 날을 드레싱하는 공정을 구비하고 있는 것을 특징으로 하는 반도체 웨이퍼의 표면 연마방법.A method for polishing a surface of a semiconductor wafer with a high-performance abrasive bonded thereon, the method comprising: dressing the blade by polishing the rotary blade with a dresser bonded with an alanthanum abrasive before polishing the wafer surface; The surface grinding method of the semiconductor wafer characterized by the above-mentioned. 제1항의 방법에 있어서, 반도체 웨이퍼의 연마시에 날은 그 회전축이 웨이퍼 표면에 거의 직교하도록 배치되고, 날과 반도체 웨이퍼는 날의 회전축에 직교하는 방향으로 상대적으로 미동되며, 날의 드레싱시에서 반도체 웨이퍼의 연마시와 같은 방법으로 날과 드레서가 날의 회전축에 거의 직교하는 방향으로 상대적으로 이동되는 것을 특징으로 하는 방법.The method of claim 1, wherein during polishing of the semiconductor wafer, the blade is arranged such that its axis of rotation is substantially orthogonal to the wafer surface, and the blade and the semiconductor wafer are relatively finely moved in a direction orthogonal to the axis of rotation of the blade, And the blade and the dresser are relatively moved in a direction substantially perpendicular to the axis of rotation of the blade in the same manner as in polishing a semiconductor wafer. 제1항의 방법에 있어서, 날에는 다이아몬드 연마제가 접착되어 있는 방법.The method according to claim 1, wherein a diamond abrasive is adhered to the blade. 제3항의 방법에 있어서, 다이아몬드 연마제의 그레인 규격이 미합중국 규격용 1200번 내지 100번인 방법.The method according to claim 3, wherein the grain size of the diamond abrasive is 1200 to 100 for US standards. 제4항의 방법에 있어서, 다이아몬드 연마제의 그레인 규격이 미합중국 규격용 1000번 내지 150번인 방법.The method according to claim 4, wherein the grain size of the diamond abrasive is 1000 to 150 for US standards. 제5항의 방법에 있어서, 다이아몬드 연마제의 그레인규격이 미합중국 규격용 800번 내지 230번인 방법.The method according to claim 5, wherein the grain size of the diamond abrasive is Nos. 800 to 230 for US standards. 제1항의 방법에 있어서, 날이 회전 지지부재의 고리형 자유단부에 설치되는 방법.The method of claim 1 wherein the blade is installed at an annular free end of the rotary support member. 제7항의 방법에 있어서, 날이 지지부재의 고리형 자유단부의 전체 원주를 따라 연장된 고리형인 방법.8. The method of claim 7, wherein the blade is annular extending along the entire circumference of the annular free end of the support member. 제3항의 방법에 있어서, 다이아몬드 연마제가 도금접착되는 방법.The method according to claim 3, wherein the diamond abrasive is plated and bonded. 제3항의 방법에 있어서, 금속접착법으로 다이아몬드 연마제를 접착하여 날을 소정형태로 형성하는 방법.The method according to claim 3, wherein the diamond abrasive is bonded by metal bonding to form a blade in a predetermined shape. 제1항의 방법에 있어서, 날의 자유단부는 날의 회전축에 대해 100℃내지 160°각도α로 연장되는 방법.The method of claim 1, wherein the free end of the blade extends at an angle of 100 ° C. to 160 ° with respect to the axis of rotation of the blade. 제11항의 방법에 있어서, 각도 α가 110°내지 150°인 방법.The method of claim 11, wherein the angle α is 110 ° to 150 °. 제12항의 방법에 있어서, 각도 α가 120°내지 140°인 방법.The method of claim 12, wherein the angle α is 120 ° to 140 °. 제11항의 방법에 있어서, 날의 자유단부 두께가 0.05내지 2.00mm인 방법.The method of claim 11 wherein the free end thickness of the blade is between 0.05 and 2.00 mm. 제14항의 방법에 있어서, 날의 자유단부 두께가 0.08내지 1.00mm인 방법.The method of claim 14 wherein the free end thickness of the blade is between 0.08 and 1.00 mm. 제15항의 방법에 있어서, 날의 자유단부 두께가 0.10내지 0.50mm인 방법.The method of claim 15 wherein the free end thickness of the blade is between 0.10 and 0.50 mm. 제1항의 방법에 있어서, 날의 자유단의 주변속도가 200내지 3000m/분인 방법.The method of claim 1 wherein the peripheral speed of the free end of the blade is between 200 and 3000 m / min. 제17항의 방법에 있어서, 날의 자유단의 주변속도가 300내지 2000m/분인 방법.18. The method of claim 17, wherein the peripheral speed of the free end of the blade is between 300 and 2000 m / min. 제18항의 방법에 있어서, 날의 자유단의 주변속도가 400내지 1300m/분인 방법.The method of claim 18, wherein the peripheral speed of the free end of the blade is 400 to 1300 m / min. 제2항의 방법에 있어서, 날과 반도체 웨이퍼의 상대적인 이동속도가 1000mm/분 정도인 방법.The method according to claim 2, wherein the relative moving speed of the blade and the semiconductor wafer is about 1000 mm / minute. 제1항의 방법에 있어서, 반도체 웨이퍼가 실리콘인 방법.The method of claim 1 wherein the semiconductor wafer is silicon. 제1항의 방법에 있어서, 반도체 웨이퍼는 그위에 회로가 설치되기 이전의 것인 방법.The method of claim 1, wherein the semiconductor wafer is before circuitry is installed thereon. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019830001712A 1982-04-23 1983-04-22 Method for grinding the surface of a semiconductor wafer KR900001663B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP68161 1982-04-23
JP57068161A JPS58184727A (en) 1982-04-23 1982-04-23 Processing apparatus for semiconductor material and satin-finished surface thereof

Publications (2)

Publication Number Publication Date
KR840004827A true KR840004827A (en) 1984-10-24
KR900001663B1 KR900001663B1 (en) 1990-03-17

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KR1019830001712A KR900001663B1 (en) 1982-04-23 1983-04-22 Method for grinding the surface of a semiconductor wafer

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US (1) US4947598A (en)
EP (1) EP0092818B1 (en)
JP (1) JPS58184727A (en)
KR (1) KR900001663B1 (en)
DE (1) DE3364665D1 (en)

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US5081051A (en) * 1990-09-12 1992-01-14 Intel Corporation Method for conditioning the surface of a polishing pad
DE4136566C1 (en) * 1991-11-07 1993-04-22 Gmn Georg Mueller Nuernberg Ag, 8500 Nuernberg, De
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EP1019955A1 (en) * 1997-08-21 2000-07-19 MEMC Electronic Materials, Inc. Method of processing semiconductor wafers
US5827111A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
US5827112A (en) * 1997-12-15 1998-10-27 Micron Technology, Inc. Method and apparatus for grinding wafers
JP3770752B2 (en) * 1998-08-11 2006-04-26 株式会社日立製作所 Semiconductor device manufacturing method and processing apparatus
US6214704B1 (en) 1998-12-16 2001-04-10 Memc Electronic Materials, Inc. Method of processing semiconductor wafers to build in back surface damage
US6283836B1 (en) * 1999-03-08 2001-09-04 Speedfam-Ipec Corporation Non-abrasive conditioning for polishing pads
US6294469B1 (en) 1999-05-21 2001-09-25 Plasmasil, Llc Silicon wafering process flow
EP1075898A3 (en) * 1999-08-13 2003-11-05 Mitsubishi Materials Corporation Dresser and dressing apparatus
JP4387010B2 (en) * 1999-11-10 2009-12-16 株式会社ディスコ Cutting equipment
US6465353B1 (en) * 2000-09-29 2002-10-15 International Rectifier Corporation Process of thinning and blunting semiconductor wafer edge and resulting wafer
US20030209310A1 (en) * 2002-05-13 2003-11-13 Fuentes Anastacio C. Apparatus, system and method to reduce wafer warpage
US7163441B2 (en) * 2004-02-05 2007-01-16 Robert Gerber Semiconductor wafer grinder
US7011567B2 (en) * 2004-02-05 2006-03-14 Robert Gerber Semiconductor wafer grinder
US9855966B2 (en) * 2012-11-20 2018-01-02 Glenn S. Welch Sharpening tool, sharpening system and kit

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JPS51140285A (en) * 1975-05-30 1976-12-03 Hitachi Metals Ltd Crystal processing method
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FR2505713A1 (en) * 1981-05-18 1982-11-19 Procedes Equip Sciences Ind Sa Semiconductor wafer carrying head for polishing machine - has circular disc covered in thin tissue with reduced pressure behind tissue to hold wafers

Also Published As

Publication number Publication date
KR900001663B1 (en) 1990-03-17
JPS6312741B2 (en) 1988-03-22
EP0092818A1 (en) 1983-11-02
JPS58184727A (en) 1983-10-28
EP0092818B1 (en) 1986-07-23
US4947598A (en) 1990-08-14
DE3364665D1 (en) 1986-08-28

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