KR830000135B1 - A rotating conversion element (a magnetic conversion element) - Google Patents

Abstract

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Description

A rotating conversion element (a magnetic conversion element)

FIG. 1 is a schematic principal view of a rotation converting element of the present invention. FIG.

Figure 2 is an equivalent circuit diagram of this device.

FIG. 3 is a plan view of a specific example of the rotation converting element. FIG.

FIG. 4 is a curve showing the dependency of the magnetic field angle of the output voltage change amount. FIG.

FIG. 5 is an equivalent circuit diagram showing a power supply system in a case where three rotation converting elements are connected in parallel. FIG.

The present invention relates to a rotation converting element and, in particular, to provide a rotation converting element most suitable for application to a brushless motor. In order to sequentially switch the current flowing through the stator coil in a smoothing motor, it is conventionally known to detect the position of the rotor using a rotation converting element.

Examples of the rotation converting element include a semiconductor ball element, a semiconductor magnetic resistance element, a planar ball element, and a magnetic body magnetic resistance element. Of these devices, devices using semiconductors require an external circuit for temperature compensation because the number of carriers and the degree of mobility change greatly and the temperature characteristics are poor. In addition, when the magnitude of the output signal varies depending on the intensity of the magnetic field, when used as a switching element for detecting the direction of the magnetic field, such as a smoothing motor, the magnetic characteristic and mechanical accuracy It is necessary to give the circuit a limiting action, and in any case, it is disadvantageous in terms of production cost.

On the other hand, in a device using a magnetic material, since a metal magnetic material is usually used, the temperature change of the resistivity and the magnetoresistance coefficient is small, and the temperature characteristic is good. Further, as the property of the magnetic material itself, it has a limiting action against the fluctuation of the magnitude of the signal magnetic field because it becomes saturated when the signal magnetic field becomes more than a certain level. Therefore, when used as a switching device for detecting the direction of a magnetic field such as a smoothing motor, an element using a magnetic body is inherently advantageous over a device using a semiconductor. However, among the conventional rotational conversion elements using a magnetic body, the planar capacitor has a small output voltage and requires a special peripheral circuit of a high gain amplifier to be used for the purpose of driving a smoothing motor . Although the magneto-resistive element can take a large output voltage, the unbalanced voltage is two orders of magnitude larger than the output voltage because of the two-terminal element, and the temperature change of the resistivity is small. However, Since the fluctuation of the voltage is not negligible as compared with the output voltage, the zero point lift due to the temperature change becomes a problem in practical use.

The present invention relates to a three-terminal rotation converting element (magnetic switching element) that eliminates the aforementioned drawbacks while maintaining the characteristics of the magnetoresistive element and the characteristics of the planar magnetoresistive element by combining a plurality of magnetoresistive elements, First and second current paths made of a ferromagnetic material having a resistance effect are connected in series to each other and the main current paths of the first current path and the second current path are roughly orthogonal to each other, And an output terminal is provided at a connection point between the first and second current paths and a current supply terminal is provided at the other end side of the first and second current paths.

The basic principle and constitution of the rotation converting element of the present invention will be described with reference to the first and second figures.

In Fig. 1, the rotational conversion element 1 is composed of flat plate-like ferromagnetic materials (A) and (B) having a rotational resistance effect. The ferromagnetic bodies A and B are arranged so that their longitudinal directions are orthogonal to each other, and are electrically connected to constitute a serial circuit. Current terminals 2 and 3 for supplying bias current are provided at both ends of the series circuit and output terminals 4 for output voltage extraction are provided at the middle point. The current terminals 2 and 3 are connected to the power source 5 and one of the current terminals 3 is contacted to constitute the rotation converting circuit 6 as a whole.

로 교차하는 방향으로 가한다. 일반적으로, 포화자화(飽和磁化) 했을 때에 강자성체의 저항은 자기저항의 이방성(異方性)에 의하여 변하므로 자계 H가 이루는 각도

에 응하여 강자성체(A)(B)의 저항

는 다음식(Voigt-Thomson의 식)으로 표시된다.A magnetic field H sufficient to saturate the ferromagnetic bodies A and B is generated in the longitudinal direction of the ferromagnetic body A in the plane formed by the ferromagnetic bodies A and B,

As shown in Fig. Generally, when the magnetization is saturated (saturation magnetization), the resistance of the ferromagnetic material changes due to the anisotropy of the magnetoresistance. Therefore, the angle formed by the magnetic field H

The resistance of the ferromagnetic material (A) (B)

(Voigt-Thomson's equation).

는 강자성체를 전류와 수직방향으로 포화자화했을 때의 저항,

는 강자성체를 전류와 평행방향으로 포화자화했을 때의 저항을 각기 나타내고 있다. 또한 제1도의 등가회로는 제2도와 같이 되므로 출력단자(4)에 있어서의 전압(

)는In the equations (1) and (2) above,

The resistance when the ferromagnetic material is saturated with the current in the perpendicular direction,

Shows the resistance when the ferromagnetic material is saturated in the direction parallel to the current. The equivalent circuit of FIG. 1 is similar to that of FIG. 2, so that the voltage at the output terminal 4

)

. When the above equations (1) and (2) are substituted into Equation (3)

으로 한다.)(only,

.

를 제2항은 변하량

를 각가 표시하고 있다. 지금, 변화량

에 주목하면,. In the equation (4), the first term on the right side is the reference voltage

The second term is the variable amount

Respectively. Now,

When attention is paid to,

는 자계를 가하지 않은 상태에 있어서의 저항이다.. only,

Is a resistance in a state in which no magnetic field is applied.

가 0도 또는 180도, 및 90도는 270도일때에 각각 최대치로 된다. 단, 변화의 방향은 반대가 되므로

가 0도 및 90도로 되는 2개의 자계를 사용하면 변화량이 최대로 되고, 스위칭동작을 시키는데 가장 적합하다는 것을 알 수 있다.Therefore, an output change corresponding to the direction of the magnetic field H appears at the output terminal 4,

Is 0 degrees or 180 degrees, and 90 degrees is 270 degrees, respectively. However, the direction of change is opposite

Is 0 degrees and 90 degrees, the amount of change becomes maximum, and it is found that it is most suitable for performing the switching operation.

As can be seen from the above equation (5), since the change of the output voltage is not related to the intensity of the magnetic field, even if the intensity of the magnetic field H changes by that direction, the output depending on the direction of the magnetic field H . It goes without saying that the strength of the magnetic field H must be capable of saturating the ferromagnetic bodies A and B.

가 큰 자성자료로 구성할 필요가 있다. 예를들면, 상온에서

가 2% 이상의 강자성금속으로서는 다음과 같은 것이 알려져 있고, 이들은 본원발명의 소자의 재료로서 사용할 수 있다.As can be seen from the above expression (5), in order to increase the output voltage change with respect to the magnetic field direction of the element 1, the ferromagnetic body A (B)

It is necessary to construct large magnetic data. For example, at room temperature

Ferromagnetic metals of 2% or more are known as the following, and they can be used as the material of the device of the present invention.

가 6.48%로 제일 크고, 더구나 Ni-Fe 합금에 비하여 내산화성이 뛰어나고 원가도 저렴하며, 그리고 납땜이 잘 되므로 실용상 가장 뛰어난 재료이다.Among them, 80Ni-20Co alloy

Is 6.48%, which is superior to Ni-Fe alloy in oxidation resistance, low cost, and is the best material for practical use because it is soldered well.

하므로, 소자(1)의 임피이던스도 동시에 높게하면 소비전력을 증가시키지 않고 출력전압을 크게 할 수 있다.As can be seen from the expression (5), another requirement for increasing the output voltage change is the power supply voltage Vo. If this is increased, high output voltage can be obtained as in the case of material selection. However, if it is used at a high power supply voltage, power consumption of the element 1 is generally increased and heat is generated, which is not preferable. The power consumption is proportional to the square of Vo and is inversely proportional to the impedance Po

Therefore, if the impedance of the element 1 is also increased at the same time, the output voltage can be increased without increasing the power consumption.

를 용이하게 높일 수가 없고, 종래의 플에이너호울 소자의 출력전압 보다 1-2 자릿수가 큰 출력전압을 얻을 수 있다.In the present invention, the width of the current path can be narrowed without changing the thickness of the ferromagnetic elements (A) and (B), so that the impedance

And an output voltage that is one to two digits larger than the output voltage of the conventional FWD device can be obtained.

는 각기 온도에 의존하여 변화하지만, 온도변화에 의하여 P₁₁및

은 동시에 변화하므로

온도변화는 매우 작아지고, 출력전압 변화량

는 거의 영향을 받지 않는다.In the above-mentioned formula (3)

Vary depending on the temperature, but due to the temperature change, P ₁₁ and < RTI ID = 0.0 >

Are changing at the same time

The temperature change becomes very small, and the output voltage variation

Are almost unaffected.

Since the rotation converting element 1 is a three-terminal element, the current terminal 3 can be grounded as a common terminal of the output terminal, so that a peripheral circuit such as a power supply circuit can be simplified. Next, a specific example of the rotation converting element 1 according to the present invention is shown in FIG. The rotation converting element 1 is composed of an insulating substrate 7 such as a slide glass or a photographic dry plate which has undergone a surface cleaning treatment and an 80Ni-20Co alloy on the surface of the substrate 7, (A) and (B) formed by etching the unnecessary portions after depositing the ferromagnetic material (A) and the ferromagnetic material (A), the output terminal 4 formed roughly between the ferromagnetic materials A) and the current terminal 2 (3) formed on the other end side of (B). The ferromagnetic bodies A and B are connected to the linear portions 8 and 9 each having sixteen main current paths and the linear portions 8 and 9 connected to each other at one end thereof and to the bending portions 10 and 11 And the linear portions 8 and 9 are configured to be orthogonal to each other. The ferromagnetic bodies A and B are connected in series to each other at the end portions 8a and 9a of the linear portions 8 and 9 and the transfer terminals 4 are taken out from the connecting portions.

The reason for this is to make the total length of the ferromagnetic bodies A and B very long. As a result, the resistance of the ferromagnetic bodies A and B can be increased, so that the impedance of the element 1 can be increased and the element 1 can be downsized. Therefore, as described above, the increase of the power consumption can be suppressed and the output voltage can be increased.

는 2.5KΩ으로 되고, 또 구동전압을 8V로 하면, 160mV의 출력전압을 발생한다. 이때의 포화자계는 50Oe 이상이고 또 소비전력은 약 26mW이며, 소자(1)를 동작시키는데 요하는 자계의 강도는 낮아도 되고, 더우기 소비전력도 적어도 된다는 것을 알수 있다. 이 소자(1)의 구동전압을 12V로 했을 경우에는 출력전압은 240mV로 되고, 또 소비전력은 약 58mV로 된다. 또 강자성체(A)(B)의 막두께가, 예를들어 1000Å일 경우에는, 전저항 2Po가 1.4KΩ으로 되고, 구동전압을 8V로 하면, 180mV의 출력전압을 발생한다. 이때의 포화자계는 50Oe 이상이고, 또 소비전력은 약 47mW이다. 이 소자(2)의 구동전압을 12V로 했을 경우에는 출력전압은 270mV로 되고 또 소비전력은 약 103mW로 된다.Next, the characteristics of the element 1 shown in FIG. 3 will be described as follows. When the film thickness of the ferromagnetic body (A) (B) is, for example, 600 Å, the total resistance

Becomes 2.5 K?, And when the driving voltage is 8 V, an output voltage of 160 mV is generated. It can be seen that the saturation magnetic field at this time is 50 Oe or more and the power consumption is about 26 mW, the intensity of the magnetic field required to operate the element 1 is low, and the power consumption is also small. When the driving voltage of this element 1 is 12 V, the output voltage becomes 240 mV and the power consumption becomes about 58 mV. When the film thickness of the ferromagnetic material (A) (B) is, for example, 1000 angstroms, the total resistance 2Po is 1.4 K ?, and when the driving voltage is 8 V, an output voltage of 180 mV is generated. The saturation magnetic field at this time is 50 Oe or more, and the power consumption is about 47 mW. When the driving voltage of the device 2 is 12 V, the output voltage becomes 270 mV and the power consumption becomes about 103 mW.

를 취하고 또 횡축에 각도

를 취하고 있다. 또한 각도원점은 제2도에 있어서의 점으로부터 π/4만큼 어긋나 있다. 이 제4도에서 명백한 바와 같이, 출력전압변화는 사인커어브로 되고, 상술한(5)식이 올바른 것을 알 수 있다.

가 -π/4에서 출력전압은 104mV,

가 영, 즉 각도원점에 있어서 출력전압이 영,

가 π/4이고 출력전압이 약 -103mV,

가 π/2에서 출력전압이 영,

가 3π/4에서 출력전압이 104mV,

가 π에서 출력전압이 영이었다.Next, FIG. 4 shows the dependence of the output voltage on the magnetic field angle when the element 1 having a film thickness of 1000 ANGSTROM is placed in a magnetic field of 3 kOe. In this figure, the ordinate indicates the output voltage variation

And the angle on the horizontal axis

. Further, the angle origin is shifted by? / 4 from the point in the second figure. As apparent from FIG. 4, the output voltage change becomes a sine curve, and it can be seen that the above-described equation (5) is correct.

The output voltage at -π / 4 is 104 mV,

In other words, when the output voltage at the angular origin is zero,

/ 4, the output voltage is about -103 mV,

If the output voltage at π / 2 is zero,

The output voltage is 104 mV at 3? / 4,

The output voltage at zero was zero.

Although the present invention has been described based on the embodiment, it will be understood that the invention can be modified in accordance with the technical idea of the present invention. For example, the arrangement directions of the ferromagnetic materials A and B are orthogonal to each other in the same plane. However, the array direction may be arbitrarily set within a range in which the characteristics of the device 2 are not deteriorated. For example, Deg.] To 70 [deg.] To 80 [deg.]. In addition, when applying a non-uniform magnetic field, it is of course possible to dispose the ferromagnetic body B so as to face the ferromagnetic body A and the substrate 7 on the rear surface side of the substrate 7, for example. As shown in an equivalent circuit diagram in FIG. 5, it is also possible to commonly use three power conversion elements 1 connected in parallel, for example, by an equivalent circuit.

각 소자가 각기 다른 동작을 하여도 각소자간의 상호간섭이 생기는 일이 없다. 이것도 본원 설명에 의한 자전변환소자의 커다란 특징이다. 또한 복수의 소자(1)를 직렬로 접속하는 것도 물론 가능하다. 또 강자성체(A)(B)를 Ni-Co 합금 이외에

가 큰 예를들어, 80Ni-20Fe 등으로 구성할 수가 있다. 이 경우에는 약한 신호자계라도 자화하기 쉬워진다. 또한 임피던스를 보다 크게하기 위하여 강자성체(A)(B)의 직선부(8)(9)의 폭을 더욱 작게하는 따위와 같은 그 형상을 여러가지로 변화시킬 수 있다.In this case,

Mutual interference between the elements does not occur even if the elements perform different operations. This is also a great feature of the rotation converting element according to the present invention. It is of course possible to connect a plurality of devices 1 in series. In addition to the Ni-Co alloy, the ferromagnetic material (A) (B)

For example, 80Ni-20Fe or the like. In this case, even a weak signal magnetic field is easily magnetized. Further, in order to further increase the impedance, the shape of the straight portions 8 and 9 of the ferromagnetic bodies A and B may be further reduced, for example.

Further, the present invention can be applied to the rotor position detection of the chainless motor, the other switching operation, the magnetic field direction detection, and the like.

Although a metal is used as the ferromagnetic material in the above-described example, it is possible to use any of those generally provided with magnetoresistive effect and metallic electrical conduction. In the above example, the ferromagnets A and B have the same resistance. However, the ferromagnets A and B may have different resistances depending on the purpose of use.

Claims (1)

The first and second current paths, each of which is made of a ferromagnetic material having a magnetoresistive effect, are connected in series to each other as described above in the drawing, and the main current paths of the first and second current paths are connected to each other And an output terminal is provided at a connection point of the first and second current paths and current supply terminals are provided at the other end side of the first and second current paths, Conversion element (magnetic conversion element).

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