KR20250149998A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR20250149998A
KR20250149998A KR1020257028270A KR20257028270A KR20250149998A KR 20250149998 A KR20250149998 A KR 20250149998A KR 1020257028270 A KR1020257028270 A KR 1020257028270A KR 20257028270 A KR20257028270 A KR 20257028270A KR 20250149998 A KR20250149998 A KR 20250149998A
Authority
KR
South Korea
Prior art keywords
insulator
oxide semiconductor
conductor
oxide
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257028270A
Other languages
English (en)
Korean (ko)
Inventor
후미토 이사카
토시카즈 오노
마사히로 타카하시
슌페이 야마자키
šœ페이 야마자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250149998A publication Critical patent/KR20250149998A/ko
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
KR1020257028270A 2023-02-17 2024-02-09 반도체 장치 Pending KR20250149998A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-023396 2023-02-17
JP2023023396 2023-02-17
PCT/IB2024/051191 WO2024171008A1 (ja) 2023-02-17 2024-02-09 半導体装置

Publications (1)

Publication Number Publication Date
KR20250149998A true KR20250149998A (ko) 2025-10-17

Family

ID=92420937

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257028270A Pending KR20250149998A (ko) 2023-02-17 2024-02-09 반도체 장치

Country Status (4)

Country Link
JP (1) JPWO2024171008A1 (https=)
KR (1) KR20250149998A (https=)
CN (1) CN120604638A (https=)
WO (1) WO2024171008A1 (https=)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP2013211537A (ja) 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2021053473A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115807A (ja) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd トランジスタ
JP6141777B2 (ja) * 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI685113B (zh) * 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TW202602212A (zh) * 2019-10-31 2026-01-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151383A (ja) 2009-12-25 2011-08-04 Semiconductor Energy Lab Co Ltd 半導体装置
JP2012257187A (ja) 2010-08-06 2012-12-27 Semiconductor Energy Lab Co Ltd 半導体集積回路
JP2013211537A (ja) 2012-02-29 2013-10-10 Semiconductor Energy Lab Co Ltd 半導体装置
WO2021053473A1 (ja) 2019-09-20 2021-03-25 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
M. Oota et al., "3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm", IEDM Tech. Dig., 2019, pp. 50-53

Also Published As

Publication number Publication date
CN120604638A (zh) 2025-09-05
JPWO2024171008A1 (https=) 2024-08-22
WO2024171008A1 (ja) 2024-08-22

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PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

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