CN120604638A - 半导体装置 - Google Patents

半导体装置

Info

Publication number
CN120604638A
CN120604638A CN202480008911.0A CN202480008911A CN120604638A CN 120604638 A CN120604638 A CN 120604638A CN 202480008911 A CN202480008911 A CN 202480008911A CN 120604638 A CN120604638 A CN 120604638A
Authority
CN
China
Prior art keywords
insulator
oxide semiconductor
conductor
oxide
hydrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202480008911.0A
Other languages
English (en)
Chinese (zh)
Inventor
井坂史人
大野敏和
高桥正弘
山崎舜平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN120604638A publication Critical patent/CN120604638A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6736—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes characterised by the shape of gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
CN202480008911.0A 2023-02-17 2024-02-09 半导体装置 Pending CN120604638A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2023-023396 2023-02-17
JP2023023396 2023-02-17
PCT/IB2024/051191 WO2024171008A1 (ja) 2023-02-17 2024-02-09 半導体装置

Publications (1)

Publication Number Publication Date
CN120604638A true CN120604638A (zh) 2025-09-05

Family

ID=92420937

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202480008911.0A Pending CN120604638A (zh) 2023-02-17 2024-02-09 半导体装置

Country Status (4)

Country Link
JP (1) JPWO2024171008A1 (https=)
KR (1) KR20250149998A (https=)
CN (1) CN120604638A (https=)
WO (1) WO2024171008A1 (https=)

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007115807A (ja) * 2005-10-19 2007-05-10 Toppan Printing Co Ltd トランジスタ
KR101870119B1 (ko) 2009-12-25 2018-06-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN107947763B (zh) 2010-08-06 2021-12-28 株式会社半导体能源研究所 半导体集成电路
US9312257B2 (en) 2012-02-29 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6141777B2 (ja) * 2013-02-28 2017-06-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI685113B (zh) * 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN114424339A (zh) 2019-09-20 2022-04-29 株式会社半导体能源研究所 半导体装置及半导体装置的制造方法
TW202602212A (zh) * 2019-10-31 2026-01-01 日商半導體能源研究所股份有限公司 半導體裝置及電子裝置

Also Published As

Publication number Publication date
JPWO2024171008A1 (https=) 2024-08-22
KR20250149998A (ko) 2025-10-17
WO2024171008A1 (ja) 2024-08-22

Similar Documents

Publication Publication Date Title
KR20250108625A (ko) 반도체 장치 및 그 제작 방법
TW202520844A (zh) 半導體裝置、記憶體裝置及半導體裝置的製造方法
TW202503860A (zh) 氧化物半導體層、氧化物半導體層的製造方法、半導體裝置以及半導體裝置的製造方法
WO2024241187A1 (ja) 半導体装置
KR20250111314A (ko) 반도체 장치 및 그 제작 방법
CN120604638A (zh) 半导体装置
TW202431612A (zh) 半導體裝置
WO2024176063A1 (ja) 金属酸化物膜、及び半導体装置
KR20260047561A (ko) 반도체 장치 및 반도체 장치의 제작 방법
WO2026078511A1 (ja) 半導体装置
JP2025012733A (ja) 半導体装置、及び半導体装置の作製方法
TW202529564A (zh) 半導體裝置及半導體裝置的製造方法
WO2026058120A1 (ja) 半導体装置
TW202612517A (zh) 半導體裝置
WO2025074208A1 (ja) 半導体装置
KR20250110728A (ko) 반도체 장치
WO2026093871A1 (ja) 半導体装置
KR20250119475A (ko) 반도체 장치, 기억 장치
KR20250116005A (ko) 반도체 장치
TW202515297A (zh) 半導體裝置
TW202505981A (zh) 氧化物半導體層、氧化物半導體層的製造方法、半導體裝置及半導體裝置的製造方法
TW202614825A (zh) 半導體裝置、以及半導體裝置的製造方法
WO2024236396A1 (ja) 半導体装置、記憶装置、半導体装置の作製方法
WO2025196595A1 (ja) 半導体装置
WO2025149872A1 (ja) 半導体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination