KR20250140563A - 반도체 디바이스 처리용의 조성물, 수식 기판의 제조 방법, 적층체의 제조 방법 - Google Patents

반도체 디바이스 처리용의 조성물, 수식 기판의 제조 방법, 적층체의 제조 방법

Info

Publication number
KR20250140563A
KR20250140563A KR1020257027907A KR20257027907A KR20250140563A KR 20250140563 A KR20250140563 A KR 20250140563A KR 1020257027907 A KR1020257027907 A KR 1020257027907A KR 20257027907 A KR20257027907 A KR 20257027907A KR 20250140563 A KR20250140563 A KR 20250140563A
Authority
KR
South Korea
Prior art keywords
group
composition
substrate
polymer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257027907A
Other languages
English (en)
Korean (ko)
Inventor
나오야 시모주
아키히로 하카마타
카츠야 콘도
토모노리 타카하시
아츠시 미즈타니
Original Assignee
후지필름 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 후지필름 가부시키가이샤 filed Critical 후지필름 가부시키가이샤
Publication of KR20250140563A publication Critical patent/KR20250140563A/ko
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
    • C09D4/06—Organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond in combination with a macromolecular compound other than an unsaturated polymer of groups C09D159/00 - C09D187/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F257/00—Macromolecular compounds obtained by polymerising monomers on to polymers of aromatic monomers as defined in group C08F12/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • H01L21/0228—
    • H01L21/28562—
    • H01L21/32—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/61—Formation of materials, e.g. in the shape of layers or pillars of insulating materials using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6506—Formation of intermediate materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Formation Of Insulating Films (AREA)
KR1020257027907A 2023-03-31 2024-03-15 반도체 디바이스 처리용의 조성물, 수식 기판의 제조 방법, 적층체의 제조 방법 Pending KR20250140563A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2023-058149 2023-03-31
JP2023058149 2023-03-31
PCT/JP2024/010174 WO2024203436A1 (ja) 2023-03-31 2024-03-15 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法

Publications (1)

Publication Number Publication Date
KR20250140563A true KR20250140563A (ko) 2025-09-25

Family

ID=92904683

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257027907A Pending KR20250140563A (ko) 2023-03-31 2024-03-15 반도체 디바이스 처리용의 조성물, 수식 기판의 제조 방법, 적층체의 제조 방법

Country Status (5)

Country Link
US (1) US20250376760A1 (https=)
JP (1) JPWO2024203436A1 (https=)
KR (1) KR20250140563A (https=)
TW (1) TW202440821A (https=)
WO (1) WO2024203436A1 (https=)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018043304A1 (ja) 2016-09-01 2018-03-08 Jsr株式会社 基材表面の選択的修飾方法及び組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8293658B2 (en) * 2010-02-17 2012-10-23 Asm America, Inc. Reactive site deactivation against vapor deposition
US10157740B1 (en) * 2017-06-15 2018-12-18 Applied Materials, Inc. Selective deposition process utilizing polymer structure deactivation process
JP7071661B2 (ja) * 2017-06-21 2022-05-19 Jsr株式会社 カバー膜形成方法
JP6904439B2 (ja) * 2018-02-05 2021-07-14 日本ゼオン株式会社 レジスト組成物およびレジスト膜
JP7762725B2 (ja) * 2021-09-03 2025-10-30 株式会社日本触媒 成膜基板

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018043304A1 (ja) 2016-09-01 2018-03-08 Jsr株式会社 基材表面の選択的修飾方法及び組成物

Also Published As

Publication number Publication date
JPWO2024203436A1 (https=) 2024-10-03
WO2024203436A1 (ja) 2024-10-03
US20250376760A1 (en) 2025-12-11
TW202440821A (zh) 2024-10-16

Similar Documents

Publication Publication Date Title
KR102861965B1 (ko) 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅
EP2326744B1 (en) Metal compositions and methods of making same
TWI324626B (en) Anti-reflective coatings for photolithography and methods of preparation thereof
EP3596155B1 (en) Lithographic compositions and methods of use thereof
EP4325291A1 (en) Wafer edge protection film forming method, patterning process, and composition for forming wafer edge protection film
US11195714B2 (en) Pattern-forming method
US20250230539A1 (en) Method for manufacturing modified substrate and method for manufacturing semiconductor device
KR20250140563A (ko) 반도체 디바이스 처리용의 조성물, 수식 기판의 제조 방법, 적층체의 제조 방법
EP4524656A1 (en) Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process
EP4517426A2 (en) Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process
EP4575640A2 (en) Compound for forming metal-containing film, composition for forming metal-containing film, and patterning process
US20210082693A1 (en) Method of forming pattern and method of manufacturing semiconductor device
WO2025142299A1 (ja) 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法
WO2019138823A1 (ja) パターニングされた基板の製造方法
CN101681113A (zh) 防反射膜形成用组合物、以及使用该组合物的光刻胶图案形成方法
WO2025126882A1 (ja) 組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法、化合物
WO2023114214A1 (en) Spin coatable metal-containing compositions and methods of using the same
WO2026070415A1 (ja) 組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法
JPWO2018043305A1 (ja) 基材表面の選択的修飾方法及び組成物
WO2025182463A1 (ja) 組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法
JP5310842B2 (ja) 反射防止膜形成用組成物
JP2007254551A (ja) 膜形成用組成物
WO2025197512A1 (ja) 半導体デバイス処理用の組成物、修飾基板の製造方法、積層体の製造方法、電子デバイスの製造方法
JP7622639B2 (ja) 組成物、基板の製造方法及び重合体
TW202611279A (zh) 半導體器件處理用組成物、修飾基板之製造方法、積層體之製造方法、電子器件之製造方法

Legal Events

Date Code Title Description
D11 Substantive examination requested

Free format text: ST27 STATUS EVENT CODE: A-1-2-D10-D11-EXM-PA0201 (AS PROVIDED BY THE NATIONAL OFFICE)

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000