KR20250126709A - 감방사선성 조성물 및 레지스트 패턴 형성 방법 - Google Patents

감방사선성 조성물 및 레지스트 패턴 형성 방법

Info

Publication number
KR20250126709A
KR20250126709A KR1020257016325A KR20257016325A KR20250126709A KR 20250126709 A KR20250126709 A KR 20250126709A KR 1020257016325 A KR1020257016325 A KR 1020257016325A KR 20257016325 A KR20257016325 A KR 20257016325A KR 20250126709 A KR20250126709 A KR 20250126709A
Authority
KR
South Korea
Prior art keywords
group
radiation
ring
atom
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257016325A
Other languages
English (en)
Korean (ko)
Inventor
가츠아키 니시코리
다쿠야 오미야
모토히로 시라타니
아스카 하치야
Original Assignee
제이에스알 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 제이에스알 가부시키가이샤 filed Critical 제이에스알 가부시키가이샤
Publication of KR20250126709A publication Critical patent/KR20250126709A/ko
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020257016325A 2022-12-28 2023-11-21 감방사선성 조성물 및 레지스트 패턴 형성 방법 Pending KR20250126709A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022212189 2022-12-28
JPJP-P-2022-212189 2022-12-28
PCT/JP2023/041890 WO2024142681A1 (ja) 2022-12-28 2023-11-21 感放射線性組成物およびレジストパターン形成方法

Publications (1)

Publication Number Publication Date
KR20250126709A true KR20250126709A (ko) 2025-08-25

Family

ID=91717087

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257016325A Pending KR20250126709A (ko) 2022-12-28 2023-11-21 감방사선성 조성물 및 레지스트 패턴 형성 방법

Country Status (5)

Country Link
US (1) US20250321483A1 (https=)
JP (1) JPWO2024142681A1 (https=)
KR (1) KR20250126709A (https=)
TW (1) TW202427059A (https=)
WO (1) WO2024142681A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026054063A1 (ja) * 2024-09-09 2026-03-12 三菱瓦斯化学株式会社 ヨウ素含有（メタ）アクリル酸エステル化合物及びヨウ素・水酸基含有重合体の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021009357A (ja) 2019-07-02 2021-01-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021039244A1 (ja) * 2019-08-26 2021-03-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、レジスト膜、電子デバイスの製造方法
WO2022158326A1 (ja) * 2021-01-22 2022-07-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
EP4282886A4 (en) * 2021-01-22 2024-07-31 FUJIFILM Corporation ACTINIC RAY OR RADIATION SENSITIVE RESIN COMPOSITION, ACTINIC RAY OR RADIATION SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, COMPOUND AND RESIN
JPWO2023054127A1 (https=) * 2021-09-29 2023-04-06
EP4485073A4 (en) * 2022-02-25 2025-08-27 Fujifilm Corp ACTINIC RAY OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
JP7720810B2 (ja) * 2022-04-06 2025-08-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021009357A (ja) 2019-07-02 2021-01-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
US20250321483A1 (en) 2025-10-16
WO2024142681A1 (ja) 2024-07-04
TW202427059A (zh) 2024-07-01
JPWO2024142681A1 (https=) 2024-07-04

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