TW202427059A - 感放射線性組成物及抗蝕劑圖案形成方法 - Google Patents

感放射線性組成物及抗蝕劑圖案形成方法 Download PDF

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Publication number
TW202427059A
TW202427059A TW112147942A TW112147942A TW202427059A TW 202427059 A TW202427059 A TW 202427059A TW 112147942 A TW112147942 A TW 112147942A TW 112147942 A TW112147942 A TW 112147942A TW 202427059 A TW202427059 A TW 202427059A
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TW
Taiwan
Prior art keywords
group
radiation
ring
polymer
acid
Prior art date
Application number
TW112147942A
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English (en)
Chinese (zh)
Inventor
錦織克聡
大宮拓也
白谷宗大
八谷明日香
Original Assignee
日商Ｊｓｒ股份有限公司
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Application filed by 日商Ｊｓｒ股份有限公司 filed Critical 日商Ｊｓｒ股份有限公司
Publication of TW202427059A publication Critical patent/TW202427059A/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW112147942A 2022-12-28 2023-12-08 感放射線性組成物及抗蝕劑圖案形成方法 TW202427059A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022212189 2022-12-28
JP2022-212189 2022-12-28

Publications (1)

Publication Number Publication Date
TW202427059A true TW202427059A (zh) 2024-07-01

Family

ID=91717087

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112147942A TW202427059A (zh) 2022-12-28 2023-12-08 感放射線性組成物及抗蝕劑圖案形成方法

Country Status (5)

Country Link
US (1) US20250321483A1 (https=)
JP (1) JPWO2024142681A1 (https=)
KR (1) KR20250126709A (https=)
TW (1) TW202427059A (https=)
WO (1) WO2024142681A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2026054063A1 (ja) * 2024-09-09 2026-03-12 三菱瓦斯化学株式会社 ヨウ素含有（メタ）アクリル酸エステル化合物及びヨウ素・水酸基含有重合体の製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5292078B2 (ja) 2008-12-05 2013-09-18 富士フイルム株式会社 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP6287369B2 (ja) 2013-03-08 2018-03-07 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP6450660B2 (ja) 2014-08-25 2019-01-09 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7351262B2 (ja) 2019-07-02 2023-09-27 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
WO2021039244A1 (ja) * 2019-08-26 2021-03-04 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、パターン形成方法、レジスト膜、電子デバイスの製造方法
WO2022158326A1 (ja) * 2021-01-22 2022-07-28 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜、パターン形成方法、及び電子デバイスの製造方法
EP4282886A4 (en) * 2021-01-22 2024-07-31 FUJIFILM Corporation ACTINIC RAY OR RADIATION SENSITIVE RESIN COMPOSITION, ACTINIC RAY OR RADIATION SENSITIVE FILM, PATTERN FORMATION METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, COMPOUND AND RESIN
JPWO2023054127A1 (https=) * 2021-09-29 2023-04-06
EP4485073A4 (en) * 2022-02-25 2025-08-27 Fujifilm Corp ACTINIC RAY OR RADIATION SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD
JP7720810B2 (ja) * 2022-04-06 2025-08-08 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Also Published As

Publication number Publication date
US20250321483A1 (en) 2025-10-16
KR20250126709A (ko) 2025-08-25
WO2024142681A1 (ja) 2024-07-04
JPWO2024142681A1 (https=) 2024-07-04

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