KR20250105630A - 촬상 소자, 전자 기기 - Google Patents

촬상 소자, 전자 기기 Download PDF

Info

Publication number
KR20250105630A
KR20250105630A KR1020257016506A KR20257016506A KR20250105630A KR 20250105630 A KR20250105630 A KR 20250105630A KR 1020257016506 A KR1020257016506 A KR 1020257016506A KR 20257016506 A KR20257016506 A KR 20257016506A KR 20250105630 A KR20250105630 A KR 20250105630A
Authority
KR
South Korea
Prior art keywords
pixel
section
transistor
unit
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257016506A
Other languages
English (en)
Korean (ko)
Inventor
시노부 아사야마
다쿠로 나라무라
료 후쿠이
도모미 이토
데츠야 우치다
도모히코 가와무라
유스케 우에사카
다카노리 야가미
유타카 니시무라
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20250105630A publication Critical patent/KR20250105630A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/014—Manufacture or treatment of image sensors covered by group H10F39/12 of CMOS image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1020257016506A 2022-11-02 2023-11-02 촬상 소자, 전자 기기 Pending KR20250105630A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2022-176008 2022-11-02
JP2022176008 2022-11-02
PCT/JP2023/039586 WO2024096095A1 (ja) 2022-11-02 2023-11-02 撮像素子、電子機器

Publications (1)

Publication Number Publication Date
KR20250105630A true KR20250105630A (ko) 2025-07-08

Family

ID=90930650

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257016506A Pending KR20250105630A (ko) 2022-11-02 2023-11-02 촬상 소자, 전자 기기

Country Status (6)

Country Link
EP (1) EP4614574A4 (https=)
JP (1) JPWO2024096095A1 (https=)
KR (1) KR20250105630A (https=)
CN (1) CN119856592A (https=)
TW (1) TW202429903A (https=)
WO (1) WO2024096095A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法
JP2014112580A (ja) 2012-12-05 2014-06-19 Sony Corp 固体撮像素子および駆動方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196742A (ja) * 2005-01-14 2006-07-27 Canon Inc 撮像装置および撮像装置の駆動方法
JP5297135B2 (ja) * 2008-10-01 2013-09-25 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
KR102383649B1 (ko) * 2014-08-19 2022-04-08 삼성전자주식회사 Cmos 이미지 센서
JP2016162788A (ja) * 2015-02-27 2016-09-05 ソニー株式会社 撮像素子、撮像装置、並びに、製造装置および方法
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
DE112019002463T5 (de) * 2018-05-16 2021-04-22 Sony Semiconductor Solutions Corporation Festkörperbildgebungselement und festkörperbildgebungsvorrichtung
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102611170B1 (ko) * 2018-12-28 2023-12-08 에스케이하이닉스 주식회사 수직 핀형 캐패시터 및 이를 포함하는 이미지 센싱 장치
KR102617087B1 (ko) * 2019-02-01 2023-12-26 삼성전자주식회사 플로팅 디퓨전 및 확장 패턴을 갖는 반도체 소자
US20230197753A1 (en) * 2020-03-16 2023-06-22 Sony Semiconductor Solutions Corporation Solid-state image element and electronic device
WO2021235101A1 (ja) * 2020-05-20 2021-11-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2022105924A (ja) * 2021-01-05 2022-07-15 ソニーセミコンダクタソリューションズ株式会社 撮像装置および測距システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006245522A (ja) 2005-02-04 2006-09-14 Tohoku Univ 光センサ、固体撮像装置、および固体撮像装置の動作方法
JP2014112580A (ja) 2012-12-05 2014-06-19 Sony Corp 固体撮像素子および駆動方法

Also Published As

Publication number Publication date
WO2024096095A1 (ja) 2024-05-10
TW202429903A (zh) 2024-07-16
CN119856592A (zh) 2025-04-18
EP4614574A4 (en) 2026-01-07
EP4614574A1 (en) 2025-09-10
JPWO2024096095A1 (https=) 2024-05-10

Similar Documents

Publication Publication Date Title
US12211875B2 (en) Imaging element having p-type and n-type solid phase diffusion layers formed in a side wall of an interpixel light shielding wall
JP7558805B2 (ja) 撮像素子、電子機器
JP7615246B2 (ja) 撮像装置および電子機器
KR102716767B1 (ko) 촬상 장치
KR102788586B1 (ko) 고체 촬상 소자 및 전자 기기
JP7676319B2 (ja) 撮像装置および電子機器
US12316987B2 (en) Solid-state imaging device
WO2021015009A1 (en) Solid-state imaging device and electronic apparatus
US20250133847A1 (en) Imaging apparatus and electronic device
JP7631226B2 (ja) 固体撮像装置および電子機器
JP7635141B2 (ja) 半導体装置、固体撮像装置及び電子機器
KR20230017768A (ko) 촬상 소자 및 촬상 장치
US20240038807A1 (en) Solid-state imaging device
US12027538B2 (en) Imaging element and electronic apparatus
KR20240019093A (ko) 반도체 장치 및 그 제조 방법, 그리고 전자 기기
KR20240163662A (ko) 광 검출 장치
KR20240118073A (ko) 촬상 장치
KR20250105630A (ko) 촬상 소자, 전자 기기
KR20240038971A (ko) 촬상 장치 및 전자 기기
KR20240160598A (ko) 광 검출 장치
KR20250136838A (ko) 반도체 장치
KR20260009311A (ko) 반도체 장치
KR20260046130A (ko) 반도체 장치 및 광 검출 장치
WO2024057806A1 (ja) 撮像装置および電子機器
WO2024034411A1 (ja) 半導体装置およびその製造方法

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

Q12 Application published

Free format text: ST27 STATUS EVENT CODE: A-1-1-Q10-Q12-NAP-PG1501 (AS PROVIDED BY THE NATIONAL OFFICE)