CN119856592A - 成像元件和电子设备 - Google Patents

成像元件和电子设备 Download PDF

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Publication number
CN119856592A
CN119856592A CN202380065137.2A CN202380065137A CN119856592A CN 119856592 A CN119856592 A CN 119856592A CN 202380065137 A CN202380065137 A CN 202380065137A CN 119856592 A CN119856592 A CN 119856592A
Authority
CN
China
Prior art keywords
pixel
transistor
region
isolation portion
inter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380065137.2A
Other languages
English (en)
Chinese (zh)
Inventor
朝山忍
楢村卓朗
福井僚
伊藤智美
内田哲弥
河村智彦
上坂祐介
矢神贵规
西村丰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN119856592A publication Critical patent/CN119856592A/zh
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/58—Control of the dynamic range involving two or more exposures
    • H04N25/587—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields
    • H04N25/589—Control of the dynamic range involving two or more exposures acquired sequentially, e.g. using the combination of odd and even image fields with different integration times, e.g. short and long exposures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202380065137.2A 2022-11-02 2023-11-02 成像元件和电子设备 Pending CN119856592A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-176008 2022-11-02
JP2022176008 2022-11-02
PCT/JP2023/039586 WO2024096095A1 (ja) 2022-11-02 2023-11-02 撮像素子、電子機器

Publications (1)

Publication Number Publication Date
CN119856592A true CN119856592A (zh) 2025-04-18

Family

ID=90930650

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380065137.2A Pending CN119856592A (zh) 2022-11-02 2023-11-02 成像元件和电子设备

Country Status (6)

Country Link
EP (1) EP4614574A4 (https=)
JP (1) JPWO2024096095A1 (https=)
KR (1) KR20250105630A (https=)
CN (1) CN119856592A (https=)
TW (1) TW202429903A (https=)
WO (1) WO2024096095A1 (https=)

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006196742A (ja) * 2005-01-14 2006-07-27 Canon Inc 撮像装置および撮像装置の駆動方法
JP5066704B2 (ja) 2005-02-04 2012-11-07 国立大学法人東北大学 固体撮像装置、および固体撮像装置の動作方法
JP5297135B2 (ja) * 2008-10-01 2013-09-25 キヤノン株式会社 光電変換装置、撮像システム、及び光電変換装置の製造方法
JP2014112580A (ja) 2012-12-05 2014-06-19 Sony Corp 固体撮像素子および駆動方法
JP6119432B2 (ja) * 2013-05-31 2017-04-26 ソニー株式会社 固体撮像素子、電子機器、および製造方法
KR102383649B1 (ko) * 2014-08-19 2022-04-08 삼성전자주식회사 Cmos 이미지 센서
JP2016162788A (ja) * 2015-02-27 2016-09-05 ソニー株式会社 撮像素子、撮像装置、並びに、製造装置および方法
JP6884647B2 (ja) * 2017-06-19 2021-06-09 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置および電子機器
DE112019002463T5 (de) * 2018-05-16 2021-04-22 Sony Semiconductor Solutions Corporation Festkörperbildgebungselement und festkörperbildgebungsvorrichtung
JP2020013817A (ja) * 2018-07-13 2020-01-23 ソニーセミコンダクタソリューションズ株式会社 固体撮像素子および電子機器
KR102611170B1 (ko) * 2018-12-28 2023-12-08 에스케이하이닉스 주식회사 수직 핀형 캐패시터 및 이를 포함하는 이미지 센싱 장치
KR102617087B1 (ko) * 2019-02-01 2023-12-26 삼성전자주식회사 플로팅 디퓨전 및 확장 패턴을 갖는 반도체 소자
US20230197753A1 (en) * 2020-03-16 2023-06-22 Sony Semiconductor Solutions Corporation Solid-state image element and electronic device
WO2021235101A1 (ja) * 2020-05-20 2021-11-25 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置
JP2022105924A (ja) * 2021-01-05 2022-07-15 ソニーセミコンダクタソリューションズ株式会社 撮像装置および測距システム

Also Published As

Publication number Publication date
WO2024096095A1 (ja) 2024-05-10
TW202429903A (zh) 2024-07-16
EP4614574A4 (en) 2026-01-07
KR20250105630A (ko) 2025-07-08
EP4614574A1 (en) 2025-09-10
JPWO2024096095A1 (https=) 2024-05-10

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