KR20250088709A - 감방사선성 조성물, 레지스트 패턴 형성 방법 및 중합체 - Google Patents

감방사선성 조성물, 레지스트 패턴 형성 방법 및 중합체 Download PDF

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KR20250088709A
KR20250088709A KR1020257010243A KR20257010243A KR20250088709A KR 20250088709 A KR20250088709 A KR 20250088709A KR 1020257010243 A KR1020257010243 A KR 1020257010243A KR 20257010243 A KR20257010243 A KR 20257010243A KR 20250088709 A KR20250088709 A KR 20250088709A
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radiation
polymer
acid
structural unit
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켄 마루야마
가츠아키 니시코리
가즈야 기리야마
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제이에스알 가부시키가이샤
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    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/06—Systems containing only non-condensed rings with a five-membered ring
    • C07C2601/08—Systems containing only non-condensed rings with a five-membered ring the ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F2810/00—Chemical modification of a polymer
    • C08F2810/50—Chemical modification of a polymer wherein the polymer is a copolymer and the modification is taking place only on one or more of the monomers present in minority

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Emergency Medicine (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020257010243A 2022-10-19 2023-10-06 감방사선성 조성물, 레지스트 패턴 형성 방법 및 중합체 Pending KR20250088709A (ko)

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JP7848733B2 (ja) * 2023-03-24 2026-04-21 信越化学工業株式会社 オニウム塩型モノマー、ポリマー、化学増幅レジスト組成物及びパターン形成方法
WO2025079648A1 (ja) * 2023-10-11 2025-04-17 三菱瓦斯化学株式会社 化合物、組成物、樹脂組成物、膜形成用組成物、リソグラフィー用膜形成用組成物、レジスト膜形成用組成物
JP2025091314A (ja) * 2023-12-06 2025-06-18 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、及び高分子化合物
WO2025142991A1 (ja) * 2023-12-28 2025-07-03 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法、及び化合物
WO2025205682A1 (ja) * 2024-03-28 2025-10-02 Jsr株式会社 感放射線性組成物、レジストパターン形成方法、重合体及び化合物
TW202547896A (zh) * 2024-06-14 2025-12-16 日商Ｊｓｒ股份有限公司 感放射線性組成物、圖案形成方法及聚合物
TW202600501A (zh) * 2024-06-21 2026-01-01 日商Ｊｓｒ股份有限公司 感放射線性組成物、圖案形成方法、化合物及聚合物
JP2026043297A (ja) * 2024-08-28 2026-03-12 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、及び化合物

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JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021009357A (ja) 2019-07-02 2021-01-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

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JP6973274B2 (ja) * 2017-05-22 2021-11-24 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP7713327B2 (ja) * 2020-08-03 2025-07-25 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、樹脂、レジスト組成物及びレジストパターンの製造方法

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Publication number Priority date Publication date Assignee Title
JP2010134279A (ja) 2008-12-05 2010-06-17 Fujifilm Corp 感活性光線または感放射線性樹脂組成物及び該組成物を用いたパターン形成方法
JP2014224984A (ja) 2013-03-08 2014-12-04 Jsr株式会社 フォトレジスト組成物、レジストパターン形成方法、化合物及び重合体
JP2016047815A (ja) 2014-08-25 2016-04-07 住友化学株式会社 塩、酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021009357A (ja) 2019-07-02 2021-01-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法

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