KR20250058744A - 반도체 장치, 표시 장치, 및 전자 기기 - Google Patents

반도체 장치, 표시 장치, 및 전자 기기 Download PDF

Info

Publication number
KR20250058744A
KR20250058744A KR1020257006642A KR20257006642A KR20250058744A KR 20250058744 A KR20250058744 A KR 20250058744A KR 1020257006642 A KR1020257006642 A KR 1020257006642A KR 20257006642 A KR20257006642 A KR 20257006642A KR 20250058744 A KR20250058744 A KR 20250058744A
Authority
KR
South Korea
Prior art keywords
transistor
terminal
circuit
potential
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020257006642A
Other languages
English (en)
Korean (ko)
Inventor
하지메 기무라
다츠노리 이노우에
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20250058744A publication Critical patent/KR20250058744A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/06—Modifications for ensuring a fully conducting state
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/129—Chiplets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Liquid Crystal Display Device Control (AREA)
KR1020257006642A 2022-09-08 2023-09-01 반도체 장치, 표시 장치, 및 전자 기기 Pending KR20250058744A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022143013 2022-09-08
JPJP-P-2022-143013 2022-09-08
PCT/IB2023/058642 WO2024052772A1 (ja) 2022-09-08 2023-09-01 半導体装置、表示装置、及び電子機器

Publications (1)

Publication Number Publication Date
KR20250058744A true KR20250058744A (ko) 2025-04-30

Family

ID=90192128

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020257006642A Pending KR20250058744A (ko) 2022-09-08 2023-09-01 반도체 장치, 표시 장치, 및 전자 기기

Country Status (4)

Country Link
JP (1) JPWO2024052772A1 (https=)
KR (1) KR20250058744A (https=)
CN (1) CN119968775A (https=)
WO (1) WO2024052772A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010156963A (ja) 2008-12-05 2010-07-15 Semiconductor Energy Lab Co Ltd 半導体装置
JP2017010000A (ja) 2015-04-13 2017-01-12 株式会社半導体エネルギー研究所 表示装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI621243B (zh) * 2011-08-29 2018-04-11 半導體能源研究所股份有限公司 半導體裝置
CN113096607A (zh) * 2019-12-23 2021-07-09 深圳市柔宇科技股份有限公司 像素扫描驱动电路、阵列基板与显示终端

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010156963A (ja) 2008-12-05 2010-07-15 Semiconductor Energy Lab Co Ltd 半導体装置
JP2017010000A (ja) 2015-04-13 2017-01-12 株式会社半導体エネルギー研究所 表示装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
K. Kato et al., "Japanese Journal of Applied Physics", 2012, volume 51, p.021201-1-021201-7
S. Amano et al., "SID Symposium Digest of Technical Papers", 2010, volume 41, issue 1, p.626-629
S. Matsuda et al., "2015 Symposium on VLSI Technology Digest of Technical Papers", 2015, p.T216-T217

Also Published As

Publication number Publication date
JPWO2024052772A1 (https=) 2024-03-14
CN119968775A (zh) 2025-05-09
WO2024052772A1 (ja) 2024-03-14

Similar Documents

Publication Publication Date Title
US12482415B2 (en) Display apparatus and electronic device
KR20230148100A (ko) 반도체 장치
JP7734740B2 (ja) 表示装置、電子機器、及び半導体装置の作製方法
US12482413B2 (en) Semiconductor device, display apparatus, and electronic device
KR20230111203A (ko) 표시 시스템 및 전자 기기
KR20230116807A (ko) 표시 장치의 제작 방법
JP2026042870A (ja) 半導体装置
KR20240010420A (ko) 반도체 장치, 표시 장치, 및 전자 기기
JP7767392B2 (ja) 表示装置、及び電子機器
WO2022229789A1 (ja) 半導体装置、表示装置、及び電子機器
US12555529B2 (en) Display apparatus and electronic device
KR20250169163A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20250058744A (ko) 반도체 장치, 표시 장치, 및 전자 기기
KR20250114024A (ko) 반도체 장치, 표시 장치, 및 전자 기기
KR20240093706A (ko) 표시 장치 및 전자 기기
CN118160027A (zh) 显示装置及电子设备
TW202329085A (zh) 電子裝置
KR20250162799A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20250165603A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20250169556A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20260010681A (ko) 반도체 장치, 기억 장치, 반도체 장치의 제작 방법
CN117412627A (zh) 半导体装置、显示装置及电子设备
KR20260005212A (ko) 반도체 장치 및 반도체 장치의 제작 방법
KR20250151432A (ko) 반도체 장치, 표시 장치, 및 전자 기기

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20250227

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application