KR20250012632A - 폴리규소 배출을 위한 제제화된 알칼리 화학물질 - Google Patents
폴리규소 배출을 위한 제제화된 알칼리 화학물질 Download PDFInfo
- Publication number
- KR20250012632A KR20250012632A KR1020247042441A KR20247042441A KR20250012632A KR 20250012632 A KR20250012632 A KR 20250012632A KR 1020247042441 A KR1020247042441 A KR 1020247042441A KR 20247042441 A KR20247042441 A KR 20247042441A KR 20250012632 A KR20250012632 A KR 20250012632A
- Authority
- KR
- South Korea
- Prior art keywords
- pure
- composition
- etching
- water
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H01L21/32134—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Detergent Compositions (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202263365154P | 2022-05-23 | 2022-05-23 | |
| US63/365,154 | 2022-05-23 | ||
| PCT/US2023/065163 WO2023230394A1 (en) | 2022-05-23 | 2023-03-30 | Formulated alkaline chemistry for polysilicon exhume |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20250012632A true KR20250012632A (ko) | 2025-01-24 |
Family
ID=86007459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020247042441A Pending KR20250012632A (ko) | 2022-05-23 | 2023-03-30 | 폴리규소 배출을 위한 제제화된 알칼리 화학물질 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20250304856A1 (https=) |
| EP (1) | EP4508676A1 (https=) |
| JP (1) | JP2025517471A (https=) |
| KR (1) | KR20250012632A (https=) |
| CN (1) | CN119452457A (https=) |
| TW (1) | TW202346541A (https=) |
| WO (1) | WO2023230394A1 (https=) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6233779B2 (ja) * | 2013-11-18 | 2017-11-22 | 富士フイルム株式会社 | 変性レジストの剥離方法、これに用いる変性レジストの剥離液および半導体基板製品の製造方法 |
| US10400167B2 (en) | 2015-11-25 | 2019-09-03 | Versum Materials Us, Llc | Etching compositions and methods for using same |
| US11180697B2 (en) | 2018-11-19 | 2021-11-23 | Versum Materials Us, Llc | Etching solution having silicon oxide corrosion inhibitor and method of using the same |
| TWI864116B (zh) * | 2019-09-30 | 2024-12-01 | 美商慧盛材料美國有限責任公司 | 用於製造半導體裝置期間之選擇性移除氮化矽之蝕刻組合物及方法 |
| KR102951694B1 (ko) * | 2019-10-29 | 2026-04-13 | 동우 화인켐 주식회사 | 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
| KR102862934B1 (ko) * | 2020-09-09 | 2025-09-22 | 동우 화인켐 주식회사 | 실리콘 식각액 조성물, 이를 이용한 패턴 형성 방법 및 어레이 기판의 제조 방법, 및 이에 따라 제조된 어레이 기판 |
-
2023
- 2023-03-30 WO PCT/US2023/065163 patent/WO2023230394A1/en not_active Ceased
- 2023-03-30 KR KR1020247042441A patent/KR20250012632A/ko active Pending
- 2023-03-30 EP EP23717384.4A patent/EP4508676A1/en active Pending
- 2023-03-30 JP JP2024569229A patent/JP2025517471A/ja active Pending
- 2023-03-30 CN CN202380046390.3A patent/CN119452457A/zh active Pending
- 2023-03-30 US US18/864,038 patent/US20250304856A1/en active Pending
- 2023-03-31 TW TW112112561A patent/TW202346541A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN119452457A (zh) | 2025-02-14 |
| WO2023230394A1 (en) | 2023-11-30 |
| JP2025517471A (ja) | 2025-06-05 |
| TW202346541A (zh) | 2023-12-01 |
| US20250304856A1 (en) | 2025-10-02 |
| EP4508676A1 (en) | 2025-02-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
St.27 status event code: A-0-1-A10-A15-nap-PA0105 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-2-2-P10-P22-nap-X000 |
|
| E13 | Pre-grant limitation requested |
Free format text: ST27 STATUS EVENT CODE: A-2-3-E10-E13-LIM-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| E13-X000 | Pre-grant limitation requested |
St.27 status event code: A-2-3-E10-E13-lim-X000 |
|
| P11 | Amendment of application requested |
Free format text: ST27 STATUS EVENT CODE: A-2-2-P10-P11-NAP-X000 (AS PROVIDED BY THE NATIONAL OFFICE) |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |